Abstract: An electronic device may be provided with a display such as an organic light-emitting diode display. The display may include an array of display pixels formed on a polymer substrate layer. The polymer substrate layer may include an contiguous layer of polyimide that forms a substrate layer in additional structures such as a polymer film and a flexible printed circuit. A first transition region may be interposed between the display and the polymer film, and a second transition region may be interposed between the polymer film and the flexible printed circuit. Metal traces may be formed on the polymer film and on the flexible printed circuit. A display driver integrated circuit may be mounted to the traces on the polymer film. The polymer film may form a U-shaped bend. The flexible printed circuit may be coupled to a printed circuit board in the device using hot bar solder connections.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

Abstract: An anisotropic conductive film includes a first thin film layer including concave portions, conductive balls arranged in the concave portions, insulating balls disposed on and between the conductive balls and each having a diameter smaller than the conductive balls, and a second thin film layer disposed covering the insulating balls. A display apparatus includes a pad part and a driving chip, which are electrically connected by the anisotropic conductive film.

Abstract: A method of forming a semiconductor device can include providing a plasma nitrided exposed top surface including an active region and an isolation region. The exposed top surface including the active region and the isolation region can be subjected to etching to form a deeper recess in the active region that in the isolation region and an unmerged epitaxial stress film can be grown in the deeper recess.

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Abstract: A display device includes a display panel including a transistor and a backlight unit providing light to the display panel. The transistor includes a transparent substrate that the backlight unit faces. A gate electrode having a first width is disposed on the transparent substrate. A gate insulating layer, having a barrier layer, is disposed on the gate electrode and the transparent substrate. A semiconductor layer is disposed on the gate insulating layer. The semiconductor layer has a second width greater than the first width.

Abstract: Provided is a vibration apparatus, method and computer-readable medium generating vibrations and ultrasonic waves. The vibration apparatus, method and computer-readable medium may generate the vibrations or the ultrasonic waves in accordance with a first control signal and a second control signal each having a frequency band different from each other.

Abstract: A digital processing device capable of receiving an additional service is disclosed. In one aspect, a digital processing device includes i) an input unit, inputting a signal, ii) a subscriber identity unit, storing an identity code of a communication operator and generating a communication network access request message, iii) an additional service identity unit, storing an identity code of an additional service operator and generating an additional service request message and v) a control unit, generating a control signal allowing one of the subscriber identity unit and the additional service identity unit to be selectively driven. In accordance with at least one inventive embodiment, a user of the digital processing device can receive an additional service without his or her subscription to a specific communication operator and use various additional services in addition to the additional services provided by the subscribed communication operator.

Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.

Abstract: In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.

Abstract: A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.

Abstract: A display apparatus includes an array substrate that includes a display area including a pixel and a non-display area adjacent to the display area, an opposite substrate facing the array substrate, a liquid crystal layer disposed between the array substrate and the opposite substrate, and a signal input pad electrically connected to the pixel to apply an external input signal to the pixel. Each of the array substrate and the opposite substrate has an inner surface facing the liquid crystal layer and an outer surface opposite to the respective inner surface, and the signal input pad is disposed on the outer surface of either the array substrate or the opposite substrate.

Abstract: A digital processing device capable of receiving an additional service is disclosed. In one aspect, a digital processing device includes i) an input unit, inputting a signal, ii) a subscriber identity unit, storing an identity code of a communication operator and generating a communication network access request message, iii) an additional service identity unit, storing an identity code of an additional service operator and generating an additional service request message and v) a control unit, generating a control signal allowing one of the subscriber identity unit and the additional service identity unit to be selectively driven. In accordance with at least one inventive embodiment, a user of the digital processing device can receive an additional service without his or her subscription to a specific communication operator and use various additional services in addition to the additional services provided by the subscribed communication operator.

Abstract: A display device includes a lower display panel, an upper display panel facing the lower display panel, a metal oxide layer surrounding outermost surfaces of the upper display panel and the lower display panel, and a barrier layer surrounding the metal oxide layer. The barrier layer includes a self-assembled monolayer.

Abstract: A display apparatus including a gate driving circuit configured to include a plurality of stages connected to each other one after another. An i-th stage of the stages includes an output transistor and a control part. At least one control transistor included in the control part includes a first control electrode to which a switching control signal is applied, and a second control electrode disposed on a layer different from a layer on which the first control electrode is disposed, and to which a reference voltage is applied.

Abstract: An encoding method comprises receiving a plurality of video frames including first and third reference frames (F1, F3) and a target frame (F2); generating a temporary frame based on assumed constant-velocity motion between the first and third reference frames (F1, F3); comparing the temporary frame target frame to detect nonlinear motion (errors in the temporary frame) between the first and third reference frames and to produce motion vector information between the target frame and at least one of the reference frames according to the comparison; and encoding the reference frames and the motion vector information.

Abstract: Disclosed herein is a spacer grid for a nuclear fuel assembly. The spacer grid has dimples for supporting fuel rods and is formed from grid strips which are assembled in a lattice shape to form lattice cells. Each grid strip has at least one hole which is formed separately from the dimples. Therefore, when coolant is drawn into the fuel assembly, a pressure difference between opposite sides of the holes is reduced, and friction generated between cut edges of the holes and the coolant reduces the magnitude of the vibration and causes a damping effect, thus reducing flow-induced vibration. The hole formed in the grid strip function to widen the range of the frequency of the flow-induced vibration caused by vortex sheddings formed around the edges of the grid strip, thus reducing the possibility of the generation of resonance with the natural frequency of the spacer grid.

Abstract: Disclosed herein is a spacer grid for a nuclear fuel assembly which is formed from grid strips of an improved structure, thus reducing flow-induced high-frequency vibration. The spacer grid has dimples or grid springs for supporting fuel rods and is formed from a plurality of grid strips assembled in a lattice shape to form lattice cells. Each of the grid strips has at least one slot formed in a planar portion of the grid strip separately from the dimple or grid spring. Therefore, characteristics of the vibration of the spacer grid can be set in a variety of different manners so that flow-induced high-frequency vibration can be reduced.

Abstract: A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.

Abstract: A circuit for driving a gate of a power MOS transistor includes an adaptive pull-up unit and an adaptive pull-down unit. The adaptive pull-up unit is connected between a first power source voltage and the gate of the power MOS transistor. The adaptive pull-up unit maximizes pull-up current driving ability. The adaptive pull-down unit is connected between a second power source voltage and the gate of the power MOS transistor. The adaptive pull-down unit maximizes pull-down current driving ability.