Abstract: Disclosed herein is an optical transmitter for generating a vestigial sideband (VSB) optical signal. The optical transmitter includes: a modulator configured based on a photonic integrated chip (PIC); an optical fiber block; and a lensed thin film filter implemented between the modulator configured based on the PIC and the optical fiber block. The PIC includes at least one grating coupler, and the lensed thin film filter is disposed so that an angle of an optical signal emitted from a first grating coupler of the PIC coincides with an angle of incident (AOI) of the lensed thin film filter to design the first grating coupler and the lensed thin film filter.

Abstract: An articulated work robot device includes: a lower body; a bridgehead coupled to a common axis at a first position of the lower body to be rotatable; first and second articulated arms configured to be overlapped with each other up and down, and having first ends respectively disposed at second and third positions opposite to each other with respect to the common axis on the bridgehead to be rotatable together through the common axis; first and second plurality of hands respectively coupled at second ends of the first and second articulated arms through scissor links; and first and second composite drive modules disposed in an internal space of the bridgehead and driving the first and second articulated arms and the first and second plurality of hands, respectively.

Abstract: A substrate processing apparatus includes a body which includes an upper face and side faces, and extends in a first direction, a plurality of robot arms which are installed on the upper face of the body, extend in the first direction, are spaced apart from each other in a second direction perpendicular to the upper face of the body, and are able to grip a wafer, and an alignment jig (JIG) which is installed on the upper face and side faces of the body, and senses positions of the plurality of robot arms, wherein the alignment jig includes, a horizontal frame disposed on the upper face of the body, a vertical frame disposed on the side faces of the body, and a displacement sensor installed on the horizontal frame and the vertical frame to sense coordinates of upper faces of the plurality of robot arms and side faces of the plurality of robot arms, the displacement sensor includes a first sensor and a second sensor which are spaced apart from side faces of the plurality of robot arms in a third direction perpe

Abstract: An electrodeionization filter includes: a housing having a water inlet and a water outlet; a first electrode installed inside the housing in a spiral shape; a second electrode installed inside the housing in a spiral shape so as to be spaced apart from the first electrode; and an ion exchange module installed between the first electrode and the second electrode for adsorbing or desorbing ionic substances contained in water introduced by an application of electricity. At least one of the first electrode and the second electrode has a structure in which a center portion thereof is denser than a peripheral region thereof. Accordingly, the lifespan of the electrodes of the electrodeionization filter can be increased, and the assembly of the electrodes and related parts can be easily facilitated.

Abstract: An apparatus for analyzing a substance of an object in a non-invasive manner is provided. The apparatus for analyzing a substance of an object includes: a sensor part including an image sensor, and a plurality of light sources disposed around the image sensor; and a processor configured to drive the plurality of light sources to obtain absorbance of each pixel of the image sensor based on an intensity of light received by each pixel, to correct the absorbance of each pixel based on a distance between the plurality of light sources and each pixel, and to analyze a substance of an object based on the corrected absorbance of each pixel.

Abstract: The present disclosure relates to a plurality of host materials comprising a first host material comprising a compound represented by formula 1, and a second host material comprising a compound represented by formula 2, and an organic electroluminescent device comprising the same. By comprising a specific combination of compounds of the present disclosure as host materials, it is possible to provide an organic electroluminescent device having improved lifetime properties as compared with a conventional organic electroluminescent device.

Abstract: The present disclosure relates to a plurality of host materials comprising a first host material comprising a compound represented by formula 1, and a second host material comprising a compound represented by formula 2, and an organic electroluminescent device comprising the same. By comprising a specific combination of compounds as host materials, it is possible to provide an organic electroluminescent device having lower driving voltage, higher luminous efficiency, higher power efficiency, and/or superior lifespan characteristics compared to conventional organic electroluminescent devices.

Abstract: Provided herein is a method of sterilizing a seasoning sauce which includes performing sterilization at an ultra-high pressure. The method of sterilizing a seasoning sauce according to an embodiment has a more excellent sterilization effect on a seasoning sauce than that of an existing heat sterilization method and enhances taste and flavor of the seasoning sauce.

Abstract: The present invention relates to a method for producing vegetable products, which effectively sterilizes fungi, yeast, pathogenic bacteria, spores of a sporogenic microorganism, etc. growing in raw vegetables and cooked vegetables, using a non-heat-treated ultra-high pressure sterilization process.

Abstract: An apparatus and a method of measuring contamination particles generated during manufacturing of semiconductor devices and an analysis method therefor are described. The apparatus for measuring contamination particles has a regulator for controlling the flow of source gas, a first junction, a first filter, a first air valve, a test component, a second junction, a flow pressure reducer, a third junction, a particle counter, a second pump, a computer system, a third air valve, a flow meter, a second filter, a second air valve, a fourth junction, a third filter, an impactor, and a first pump. It is possible to analyze structures and elements of the contamination particles generated from a gas delivery system (GDS) and from at least one utility component constituting the system. Further, it is possible to set up a reference for controlling the contamination particles generated from the GDS and from at least one of the utility components.

Abstract: An apparatus and a method of measuring contamination particles generated during manufacturing of semiconductor devices and an analysis method therefor are described. The apparatus for measuring contamination particles has a regulator for controlling the flow of source gas, a first junction, a first filter, a first air valve, a test component, a second junction, a flow pressure reducer, a third junction, a particle counter, a second pump, a computer system, a third air valve, a flow meter, a second filter, a second air valve, a fourth junction, a third filter, an impactor, and a first pump. It is possible to analyze structures and elements of the contamination particles generated from a gas delivery system (GDS) and from at least one utility component constituting the system. Further, it is possible to set up a reference for controlling the contamination particles generated from the GDS and from at least one of the utility components.

Abstract: An apparatus for quantitatively depositing molecular impurities on a semiconductor wafer, includes a reaction chamber, a gas generator for generating a source gas serving as the molecular impurities, a humidifier for generating moisture vapour of a constant temperature, a mixer for mixing the source gas and the moisture vapour to generate a mixed gas, a gas injector for injecting the mixed gas into the reaction chamber, an exhausting part for initiating a vacuum condition in the reaction chamber before deposition of the molecular impurities and for exhausting a remaining gases after deposition of the molecular impurities, and a cleaning air supply portion for supplying a cleaning air into the reaction chamber before deposition of the molecular impurities. After fabricating a semiconductor device using the wafer processed as above, a defective source of mechanism of contamination can be traced by analysing the semiconductor device.

Abstract: A method for forming a minute pattern in a metal workpiece, comprising the steps of forming a mask pattern on the metal workpiece and electro-chemically etching the metal workpiece. The workpiece is electro-chemically etched in a electrolyte bath following formation of the mask pattern.

Abstract: A wet etching device used in manufacturing a semiconductor device includes a power source, a transmission device for transmitting power from the power source, and a roller for reversing top and bottom positions of a wafer placed in a processing bath using power from the power source transmitted by the transmission device. Here, the initial top and bottom positions of the wafer during loading are reversed before unloading. Accordingly, the entire surface of the wafer spends an equal amount of time in the processing bath containing a chemical solution and can thus be etched uniformly.

Abstract: An ion implanter and an ion implanting method compatible for both positive and negative ions. The ion implanter has an ion extractor and a mass analyzer for deflecting ions, having one of a positive or negative charged state, in a predetermined direction regardless of the charged state of the ions. A polarity converter changes the flux direction of a magnetic field in the mass analyzer according to the charged state of the ions. Thus, shallow and deep impurity layers can be formed into wafers without changing ion implanters, such that BF.sup.+ as well as B.sup.+ or P.sup.+ can be implanted with a single ion implanter. As a result, the product yield of a semiconductor device can be improved.

Abstract: An exhaust system for an ion implanter includes an exhaust pump for removing remaining gases in an inner portion of the ion implanter, an exhaust duct for carrying the remaining gases from the exhaust pump to the outside of the exhaust system, and a gas introducing portion for introducing heated gases from a gas storage tank to the exhaust duct. Therefore, by-products on an inside of the exhaust duct are heated by the gases, such that a reaction between the remaining gases from the exhaust pump and the heated by-products is prevented. With the exhaust system, a corona discharge is not generated inside the exhaust duct, thereby preventing the exhaust duct from being burned out.