Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Abstract: There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

Abstract: An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

Abstract: A computing system includes memory configured to store instructions and a nozzle library, and a processor configured to access the memory and to execute the instructions. The instructions cause the computing system to select at least one nozzle unit as a selected at least one nozzle unit based on the nozzle library and to place the selected at least one nozzle unit at corresponding location coordinates, to create multiple volume meshes for the process chamber, and to simulate the flow of the gas through the selected at least one nozzle unit in the process chamber based on the multiple volume meshes in the process chamber. The nozzle library includes information about multiple nozzle units of which each has multiple volume meshes formed therein. The nozzle units have different shapes from each other.

Abstract: An apparatus for generating 3D shape data of a showerhead includes: a data processor that generates data sets comprising information indicating values of a first distance between an upper surface of a wafer and a showerhead, information indicating positions on the wafer and information about a fluid flow physical quantity value and determines a function representing a relationship among the various information; an input unit that receives condition data comprising a target fluid flow physical quantity value for each of the positions; and a database that stores information about the function. The data processor obtains information about a second distance, which has the target fluid flow physical quantity value, between the upper surface of the wafer and the showerhead at each of the positions, extracts spatial coordinate information of a lower surface of the showerhead, and generates 3D shape data of the showerhead using the spatial coordinate information.

Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Abstract: An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

Abstract: An apparatus for generating 3D shape data of a showerhead includes: a data processor that generates data sets comprising information indicating values of a first distance between an upper surface of a wafer and a showerhead, information indicating positions on the wafer and information about a fluid flow physical quantity value and determines a function representing a relationship among the various information; an input unit that receives condition data comprising a target fluid flow physical quantity value for each of the positions; and a database that stores information about the function. The data processor obtains information about a second distance, which has the target fluid flow physical quantity value, between the upper surface of the wafer and the showerhead at each of the positions, extracts spatial coordinate information of a lower surface of the showerhead, and generates 3D shape data of the showerhead using the spatial coordinate information.

Abstract: A computing system includes memory configured to store instructions and a nozzle library, and a processor configured to access the memory and to execute the instructions. The instructions cause the computing system to select at least one nozzle unit as a selected at least one nozzle unit based on the nozzle library and to place the selected at least one nozzle unit at corresponding location coordinates, to create multiple volume meshes for the process chamber, and to simulate the flow of the gas through the selected at least one nozzle unit in the process chamber based on the multiple volume meshes in the process chamber. The nozzle library includes information about multiple nozzle units of which each has multiple volume meshes formed therein. The nozzle units have different shapes from each other.

Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.

Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.

Abstract: The present invention relates to an integrated, composite hybrid electric device in which various devices are formed as a single unit on one flexible substrate, and a fabrication method thereof. More particularly, the present invention a hybrid electric device in which a display device, a vibration-generating (or vibration-sensing) device, and a non-volatile memory device are formed on a single flexible piezoelectric polymer substrate into a single unit by using a flexible piezoelectric polymer substrate whose both surfaces are thinly deposited with a patterned transparent oxidation electrode, and a fabrication method thereof.

Abstract: The present invention relates to an integrated, composite hybrid electric device in which various devices are formed as a single unit on one flexible substrate, and a fabrication method thereof. More particularly, the present invention a hybrid electric device in which a display device, a vibration-generating (or vibration-sensing) device, and a non-volatile memory device are formed on a single flexible piezoelectric polymer substrate into a single unit by using a flexible piezoelectric polymer substrate whose both surfaces are thinly deposited with a patterned transparent oxidation electrode, and a fabrication method thereof.

Abstract: The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage.

Abstract: The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage.