Patents by Inventor Sang-Yun NAM

Sang-Yun NAM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11976155
    Abstract: The present disclosure relates to an expanded foam solution for forming a thermosetting expanded foam having excellent flame retardancy produced using the same. According to the present disclosure, nanoclay is mixed with a polyol-based compound using ultrasonic waves, an isocyanate-based compound is added, and a trimerization catalyst or an isocyanurate compound is mixed with the polyol-based compound so that an isocyanurate structure is formed.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: May 7, 2024
    Assignee: KYUNG DONG ONE CORPORATION
    Inventors: Jong Hyun Yoon, Sang Yun Lee, Dae Woo Nam
  • Publication number: 20230343776
    Abstract: A semiconductor device includes: a capacitor disposed over a substrate including a lower electrode, a dielectric layer, and an upper electrode; and a discharge structure spaced apart from the capacitor, connected to the upper electrode of the capacitor, and suitable for discharging, to the substrate, a charge induced from a plasma process for forming the upper electrode of the capacitor.
    Type: Application
    Filed: June 29, 2023
    Publication date: October 26, 2023
    Inventor: Sang Yun NAM
  • Patent number: 11728329
    Abstract: A semiconductor device includes: a capacitor disposed over a substrate including a lower electrode, a dielectric layer, and an upper electrode; and a discharge structure spaced apart from the capacitor, connected to the upper electrode of the capacitor, and suitable for discharging, to the substrate, a charge induced from a plasma process for forming the upper electrode of the capacitor.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: August 15, 2023
    Assignee: SK hynix Inc.
    Inventor: Sang Yun Nam
  • Publication number: 20220216197
    Abstract: A semiconductor device includes: a capacitor disposed over a substrate including a lower electrode, a dielectric layer, and an upper electrode; and a discharge structure spaced apart from the capacitor, connected to the upper electrode of the capacitor, and suitable for discharging, to the substrate, a charge induced from a plasma process for forming the upper electrode of the capacitor.
    Type: Application
    Filed: July 8, 2021
    Publication date: July 7, 2022
    Inventor: Sang Yun NAM
  • Patent number: 9620198
    Abstract: A semiconductor memory apparatus may precharge a plurality of word lines to first and/or second low voltages. The semiconductor memory apparatus may precharge an odd word line and an even word line to different levels, and accelerate passing GIDL occurring from a memory cell toward a word line to screen memory cells susceptible to GIDL.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: April 11, 2017
    Assignee: SK Hynix Inc.
    Inventor: Sang Yun Nam
  • Patent number: 8552427
    Abstract: A fuse part of a semiconductor device includes an insulation layer over a substrate, and a fuse over the insulation layer, wherein the fuse includes a plurality of blowing pads for irradiating a laser beam and the plurality of blowing pads have laser coordinates different from one another.
    Type: Grant
    Filed: December 24, 2008
    Date of Patent: October 8, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventor: Sang-Yun Nam
  • Publication number: 20090250786
    Abstract: A fuse part of a semiconductor device includes an insulation layer over a substrate, and a fuse over the insulation layer, wherein the fuse includes a plurality of blowing pads for irradiating a laser beam and the plurality of blowing pads have laser coordinates different from one another.
    Type: Application
    Filed: December 24, 2008
    Publication date: October 8, 2009
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Sang-Yun NAM