Abstract: The present invention relates to a recombinant microorganism imparted with increased ability to produce glutaric acid by further introducing a gene encoding a polypeptide having glutaric acid transporter activity into a microorganism having ability to produce glutaric acid, and to a method of preparing glutaric acid using the recombinant microorganism. According to the present invention, glutaric acid used for the preparation of various compounds such as polyamide, polyurethane, 1,5-pentanediol, and 5-hydroxyvaleric acid can be biosynthesized at high yield.

Abstract: A communication method and apparatus to provide mobility of an object is disclosed. The communication method to support mobility of an object moving on networks includes forwarding a packet to be transmitted to the object to a network to which the object moves based on an identifier and a locator of the object.

Abstract: Disclosed are a mobile terminal with a reduced handoff delay time and a wireless network system comprising same. A mobile terminal according to one embodiment of the present invention comprises: a sensor unit for generating azimuth angle data; a memory unit which stores a base station table containing data about a next base station corresponding to the orientation of the mobile terminal in the current base station; and a handoff management unit which searches for one or more next base station(s) by using the azimuth angle data from the sensor unit and the base station table, and performs a scanning action with respect to the found next base station(s) in accordance with the search results.

Abstract: A Semiconductor device includes a substrate having an active region defined by a device isolation layer, a trench formed by etching the active region and the device isolation layer, a buried gate filling a portion of the trench, an interlayer insulation layer formed over the buried gate and filling a remainder of the trench, and an oxidation protecting layer formed between the buried gate and the device isolation layer.

Abstract: A Semiconductor device includes a substrate having an active region defined by a device isolation layer, a trench formed by etching the active region and the device isolation layer, a buried gate filling a portion of the trench, an interlayer insulation layer formed over the buried gate and filling a remainder of the trench, and an oxidation protecting layer formed between the buried gate and the device isolation layer.