Patents by Inventor Sangameshwar Rao Saudari
Sangameshwar Rao Saudari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10991689Abstract: A method includes forming a first region including a pair of first FinFETs and a second region including a pair of second FinFETs on a substrate. Each FinFET includes a metal gate having a first spacer adjacent thereto, and each first FinFET has a gate dielectric that is thicker than a gate dielectric of each second FinFET, such that the first FinFETs can be higher voltage input/output devices. The method forms a first contact between the metal gates of the pair of first FinFETs with a second spacer thereabout, the second spacer contacting a portion of each first spacer. The second spacer thus has a portion extending parallel to the metal gates, and a portion extending perpendicular to the metal gates. A second contact is formed between the metal gates of the pair of second FinFETs, and the second contact devoid of the second spacer.Type: GrantFiled: April 5, 2019Date of Patent: April 27, 2021Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Abu Naser M. Zainuddin, Christopher D. Sheraw, Sangameshwar Rao Saudari, Wei Ma, Kai Zhao, Bala S Haran
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Publication number: 20200321332Abstract: A method includes forming a first region including a pair of first FinFETs and a second region including a pair of second FinFETs on a substrate. Each FinFET includes a metal gate having a first spacer adjacent thereto, and each first FinFET has a gate dielectric that is thicker than a gate dielectric of each second FinFET, such that the first FinFETs can be higher voltage input/output devices. The method forms a first contact between the metal gates of the pair of first FinFETs with a second spacer thereabout, the second spacer contacting a portion of each first spacer. The second spacer thus has a portion extending parallel to the metal gates, and a portion extending perpendicular to the metal gates. A second contact is formed between the metal gates of the pair of second FinFETs, and the second contact devoid of the second spacer.Type: ApplicationFiled: April 5, 2019Publication date: October 8, 2020Inventors: Abu Naser M. Zainuddin, Christopher D. Sheraw, Sangameshwar Rao Saudari, Wei Ma, Kai Zhao, Bala S. Haran
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Patent number: 10096733Abstract: Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.Type: GrantFiled: May 10, 2016Date of Patent: October 9, 2018Assignee: The Trustees of the University of PennsylvaniaInventors: Cherie R. Kagan, Aaron T. Fafarman, Ji-Hyuk Choi, Weon-Kyu Koh, David K. Kim, Soong Ju Oh, Yuming Lai, Sung-Hoon Hong, Sangameshwar Rao Saudari, Christopher B. Murray
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Patent number: 10096734Abstract: Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.Type: GrantFiled: May 10, 2016Date of Patent: October 9, 2018Assignee: The Trustees of the University of PennsylvaniaInventors: Cherie R. Kagan, Aaron T. Fafarman, Ji-Hyuk Choi, Weon-Kyu Koh, David K. Kim, Soong Ju Oh, Yuming Lai, Sung-Hoon Hong, Sangameshwar Rao Saudari, Christopher B. Murray
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Publication number: 20160336087Abstract: Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.Type: ApplicationFiled: May 10, 2016Publication date: November 17, 2016Inventors: Cherie R. Kagan, AARON T. FAFARMAN, JI-HYUK CHOI, WEON-KYU KOH, DAVID K. KIM, SOONG JU OH, YUMING LAI, SUNG-HOON HONG, SANGAMESHWAR RAO SAUDARI, CHRISTOPHER B. MURRAY
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Publication number: 20160336474Abstract: Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.Type: ApplicationFiled: May 10, 2016Publication date: November 17, 2016Inventors: CHERIE R. KAGAN, AARON T. FAFARMAN, JI-HYUK CHOI, WEON-KYU KOH, DAVID K. KIM, SOONG JU OH, YUMING LAI, SUNG-HOON HONG, SANGAMESHWAR RAO SAUDARI, CHRISTOPHER B. MURRAY
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Patent number: 9336919Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.Type: GrantFiled: August 19, 2013Date of Patent: May 10, 2016Assignee: The Trustees of the University of PennsylvaniaInventors: Cherie R. Kagan, Aaron T. Fafarman, Ji-Hyuk Choi, Weon-kyu Koh, David K. Kim, Soong Ju Oh, Yuming Lai, Sung-Hoon Hong, Sangameshwar Rao Saudari, Christopher B. Murray
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Patent number: 8940595Abstract: A faceted intrinsic buffer semiconductor material is deposited on sidewalls of a source trench and a drain trench by selective epitaxy. A facet adjoins each edge at which an outer sidewall of a gate spacer adjoins a sidewall of the source trench or the drain trench. A doped semiconductor material is subsequently deposited to fill the source trench and the drain trench. The doped semiconductor material can be deposited such that the facets of the intrinsic buffer semiconductor material are extended and inner sidewalls of the deposited doped semiconductor material merges in each of the source trench and the drain trench. The doped semiconductor material can subsequently grow upward. Faceted intrinsic buffer semiconductor material portions allow greater outdiffusion of dopants near faceted corners while suppressing diffusion of dopants in regions of uniform width, thereby suppressing short channel effects.Type: GrantFiled: March 15, 2013Date of Patent: January 27, 2015Assignee: International Business Machines CorporationInventors: Bhupesh Chandra, Paul Chang, Gregory G. Freeman, Dechao Guo, Judson R. Holt, Arvind Kumar, Timothy J. McArdle, Shreesh Narasimha, Viorel Ontalus, Sangameshwar Rao Saudari, Christopher D. Sheraw, Matthew W. Stoker
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Publication number: 20140264558Abstract: A faceted intrinsic buffer semiconductor material is deposited on sidewalls of a source trench and a drain trench by selective epitaxy. A facet adjoins each edge at which an outer sidewall of a gate spacer adjoins a sidewall of the source trench or the drain trench. A doped semiconductor material is subsequently deposited to fill the source trench and the drain trench. The doped semiconductor material can be deposited such that the facets of the intrinsic buffer semiconductor material are extended and inner sidewalls of the deposited doped semiconductor material merges in each of the source trench and the drain trench. The doped semiconductor material can subsequently grow upward. Faceted intrinsic buffer semiconductor material portions allow greater outdiffusion of dopants near faceted corners while suppressing diffusion of dopants in regions of uniform width, thereby suppressing short channel effects.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Bhupesh Chandra, Paul Chang, Gregory G. Freeman, Dechao Guo, Judson R. Holt, Arvind Kumar, Timothy J. McArdle, Shreesh Narasimha, Viorel Ontalus, Sangameshwar Rao Saudari, Christopher D. Sheraw, Matthew W. Stoker
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Patent number: 8686404Abstract: Electrodes in an organic thin film transistor based on single component organic semiconductors may be chemically modified to realize ambipolar transport. Electronic circuits may be assembled which include at least two such organic thin film transistors wherein at least one transistor is configured as a pmos transistor and at least on other transistor is configured as a nmos transistor.Type: GrantFiled: December 8, 2009Date of Patent: April 1, 2014Assignee: The Trustees of the University of PennsylvaniaInventors: Cherie Kagan, Sangameshwar Rao Saudari
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Publication number: 20140050851Abstract: Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.Type: ApplicationFiled: August 19, 2013Publication date: February 20, 2014Inventors: Cherie R. Kagan, Aaron T. Fafarman, Ji-Hyuk Choi, Weon-kyu Koh, David K. Kim, Soong Ju Oh, Yuming Lai, Sung-Hoon Hong, Sangameshwar Rao Saudari, Christopher B. Murray
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Publication number: 20120018706Abstract: Electrodes in an organic thin film transistor based on single component organic semiconductors may be chemically modified to realize ambipolar transport. Electronic circuits may be assembled which include at least two such organic thin film transistors wherein at least one transistor is configured as a pmos transistor and at least on other transistor is configured as a nmos transistor.Type: ApplicationFiled: December 8, 2009Publication date: January 26, 2012Inventors: Cherie Kagan, Sangameshwar Rao Saudari