Abstract: The present invention relates to a novel electrolyte and a secondary battery including the same. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: The present invention relates to an electrolyte solution and a secondary battery including the same. According to the present invention, the present invention has an effect of providing a secondary battery having improved charging efficiency and output due to low discharge resistance and having a long lifespan and excellent high-temperature capacity retention by suppressing gas generation and increase in thickness.

Abstract: Provided are methods and systems for automatically collecting and updating information that is related to a point of interest in real space. According to the methods, information relating to a plurality of points of interest (POIs), which exist in real space, is automatically collected and compared to previously collected information, and if there is a change, the change can be automatically updated so as to provide a location-based service, such as a map service, in real space such as a downtown street or a mall.

Abstract: Provided is a memory card, which includes two pairs of opposite edges, first row terminals arranged adjacent to an insertion-side edge of the memory card, and second row terminals arranged apart from the insertion-side edge of the memory card. The memory card can be easily reset in terms of software without controlling power supply in terms of hardware. Also, the memory card can be smoothly attached and detached during insertion of the memory card into a socket and reduce damage to a device.

Abstract: Provided is a memory card, which includes two pairs of opposite edges, first row terminals arranged adjacent to an insertion-side edge of the memory card, and second row terminals arranged apart from the insertion-side edge of the memory card. The memory card can be easily reset in terms of software without controlling power supply in terms of hardware. Also, the memory card can be smoothly attached and detached during insertion of the memory card into a socket and reduce damage to a device.

Abstract: Provided is a memory card, which includes two pairs of opposite edges, first row terminals arranged adjacent to an insertion-side edge of the memory card, and second row terminals arranged apart from the insertion-side edge of the memory card. The memory card can be easily reset in terms of software without controlling power supply in terms of hardware. Also, the memory card can be smoothly attached and detached during insertion of the memory card into a socket and reduce damage to a device.

Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.

Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.

Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.

Abstract: A nonvolatile memory device comprises a memory cell array, a page buffer, and a bit line connection signal controller. The memory cell array comprises a plurality of word lines and bit lines arranged in rows and columns, and a plurality of memory cells connected to the respective word lines and bit lines. The page buffer connects a selected bit line among the plurality of bit lines to the page buffer, applies a precharge voltage to the selected bit line, and senses a voltage of the selected bit line after developing of the selected bit line according to a bit line connection signal, during a read operation. The bit line connection signal controller changes the bit line connection signal according to a control signal, during the read operation.