Patents by Inventor Sang Do Lee
Sang Do Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12480754Abstract: Proposed is an inspection device for a cooling plate capable of accurately inspecting cooling plates to reduce cooling plate defect rate. The device includes an inspection table including a base on which a cooling plate is seated, a support block located on each side of the cooling plate, a guide block, and a plurality of height blocks supporting a lower surface of a base plate, a clamp provided on the base and pressing an upper surface of the base plate, a plurality of gauge jigs and a plurality of gauge grooves, a first measurement unit measuring a distance at which the end of an extension plate is spaced from a bending plate, and a second measurement unit measuring a distance at which the end of the bending plate is spaced apart from the end of the base plate in the width direction, and measuring the flatness of the base plate.Type: GrantFiled: July 14, 2023Date of Patent: November 25, 2025Assignee: DO LIM INDUSTRY CO., LTD.Inventors: Sung Gye Park, Sung Joo Kim, Ki Young Kim, Tae Moon Kwon, Sang Do Lee
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Publication number: 20240019236Abstract: Proposed is an inspection device for a cooling plate capable of accurately inspecting cooling plates to reduce cooling plate defect rate. The device includes an inspection table including a base on which a cooling plate is seated, a support block located on each side of the cooling plate, a guide block, and a plurality of height blocks supporting a lower surface of a base plate, a clamp provided on the base and pressing an upper surface of the base plate, a plurality of gauge jigs and a plurality of gauge grooves, a first measurement unit measuring a distance at which the end of an extension plate is spaced from a bending plate, and a second measurement unit measuring a distance at which the end of the bending plate is spaced apart from the end of the base plate in the width direction, and measuring the flatness of the base plate.Type: ApplicationFiled: July 14, 2023Publication date: January 18, 2024Inventors: Sung Gye PARK, Sung Joo KIM, Ki Young KIM, Tae Moon KWON, Sang Do LEE
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Patent number: 9749779Abstract: A method and a system for establishing a local routing in a mobile communication network, and for allowing different mobile stations connected with the same Access Service Network GateWay (ASN GW) to transmit and receive traffic without delivering such traffic to a Home Agent (HA) are provided. In the method, a session server determines whether first and second mobile stations are connected with the same ASN GW by using their location information. In case of a connection with the same ASN GW, the session server establishes a local routing in the ASN GW so that traffic between the first and second mobile stations is directly routed to each other at the ASN GW. Then the ASN GW receiving the traffic from one of both mobile stations transmits the traffic to the other according to the local routing.Type: GrantFiled: December 16, 2009Date of Patent: August 29, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Jun Moon, Sang Do Lee, Jong Woo Hong, Hyeon Jin Kang, Ji Hye Ha
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Patent number: 9514857Abstract: A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.Type: GrantFiled: October 9, 2013Date of Patent: December 6, 2016Assignee: Corning Precision Materials Co., Ltd.Inventors: SooHo Park, JongSe Park, Young Zo Yoo, Joo Young Lee, Seo Hyun Kim, Gun Sang Yoon, Myong Woon Kim, Hyung Soo Shin, Seung Ho Yoo, Sang Do Lee, Sang Ick Lee, Sang Jun Yim
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Patent number: 9245740Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.Type: GrantFiled: June 4, 2014Date of Patent: January 26, 2016Assignee: DNF Co., Ltd.Inventors: Se Jin Jang, Sang Do Lee, Sung Gi Kim, Jong Hyun Kim, Byeong Il Yang, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
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Patent number: 9158050Abstract: The present disclosure provides a polarizer having a transmittance of about 45% or more and a transmittance distribution of about 0.3% or less.Type: GrantFiled: December 21, 2012Date of Patent: October 13, 2015Assignee: CHEIL INDUSTRIES, INC.Inventors: Wan Taek Hong, Sang Do Lee, Hae Ryong Chung
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Patent number: 9147595Abstract: A semiconductor device includes a substrate and a plurality of active pillars disposed on the substrate and spaced apart from each other by trenches. Each of the active pillars includes a buried metal silicide pattern and an active region stacked on the buried metal silicide pattern, and the active region includes impurity junction regions.Type: GrantFiled: March 15, 2013Date of Patent: September 29, 2015Assignee: SK HYNIX INC.Inventors: Sang Do Lee, Hae Jung Lee, Myoung Soo Kim, Sang Kil Kang
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Patent number: 8932389Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.Type: GrantFiled: November 19, 2012Date of Patent: January 13, 2015Assignee: Samsung Corning Precision Materials Co., Ltd.Inventors: Sooho Park, Seohyun Kim, Jeongwoo Park, Taejung Park, YoungZo Yoo, GunSang Yoon, Eun-Ho Choi, Myong Woon Kim, Bogyeong Kim, Hyung Soo Shin, Seung Ho Yoo, Sang Do Lee, Sang Ick Lee, Sang Jun Yim
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Publication number: 20140363985Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.Type: ApplicationFiled: June 4, 2014Publication date: December 11, 2014Inventors: Se Jin Jang, Sang Do Lee, Sung Gi Kim, Jong Hyun Kim, Byeong IL Yang, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
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Patent number: 8868071Abstract: A femto base station of a WiMAX system can manage a list of closed subscriber groups (CSGs). A CSG indicator is broadcast. The femto base station receives a registration request message from a mobile station having received the CSG indicator and adds the mobile station to a CSG registration list. The femto base station searches for the mobile station from the CSG registration list if an attach request message is received; and forwards the attach request message to an access service network (ASN) gateway if the mobile station is in the CSG registration list. The femto base station establishes a link message with the mobile station if an attach acceptance message corresponding to the attach request message from the ASN-gateway.Type: GrantFiled: January 27, 2010Date of Patent: October 21, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ji Hye Ha, Dong Keon Kong, Sang Jun Moon, Sang Do Lee
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Patent number: 8858694Abstract: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.Type: GrantFiled: November 19, 2012Date of Patent: October 14, 2014Assignee: Samsung Corning Precision Materials Co., Ltd.Inventors: Sooho Park, Seohyun Kim, Jeongwoo Park, Taejung Park, Young Zo Yoo, GunSang Yoon, Eun-Ho Choi, Myong Woon Kim, Bogyeong Kim, Hyung Soo Shin, Seung Ho Yoo, Sang Do Lee, Sang Ick Lee, Sang Jun Yim
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Publication number: 20140175555Abstract: A semiconductor device includes a substrate and a plurality of active pillars disposed on the substrate and spaced apart from each other by trenches. Each of the active pillars includes a buried metal silicide pattern and an active region stacked on the buried metal silicide pattern, and the active region includes impurity junction regions.Type: ApplicationFiled: March 15, 2013Publication date: June 26, 2014Applicant: SK HYNIX INC.Inventors: Sang Do LEE, Hae Jung LEE, Myoung Soo KIM, Sang Kil KANG
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Publication number: 20140099443Abstract: A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.Type: ApplicationFiled: October 9, 2013Publication date: April 10, 2014Applicant: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.Inventors: SooHo Park, JongSe Park, Young Zo Yoo, Joo Young Lee, Seo Hyun Kim, Gun Sang Yoon, Myong Woon Kim, Hyung Soo Shin, Seung Ho Yoo, Sang Do Lee, Sang Ick Lee, Sang Jun Yim
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Publication number: 20130163079Abstract: The present disclosure provides a polarizer having a transmittance of about 45% or more and a transmittance distribution of about 0.3% or less.Type: ApplicationFiled: December 21, 2012Publication date: June 27, 2013Inventors: Wan Taek HONG, Sang Do LEE, Hae Ryong CHUNG
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Publication number: 20100190498Abstract: A femto base station of a WiMAX system can manage a list of closed subscriber groups (CSGs). A CSG indicator is broadcast. The femto base station receives a registration request message from a mobile station having received the CSG indicator and adds the mobile station to a CSG registration list. The femto base station searches for the mobile station from the CSG registration list if an attach request message is received; and forwards the attach request message to an access service network (ASN) gateway if the mobile station is in the CSG registration list. The femto base station establishes a link message with the mobile station if an attach acceptance message corresponding to the attach request message from the ASN-gateway.Type: ApplicationFiled: January 27, 2010Publication date: July 29, 2010Applicant: Samsung Electronics Co., Ltd.Inventors: Ji Hye Ha, Dong Keon Kong, Sang Jun Moon, Sang Do Lee
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Publication number: 20100157900Abstract: A method and a system for establishing a local routing in a mobile communication network, and for allowing different mobile stations connected with the same Access Service Network GateWay (ASN GW) to transmit and receive traffic without delivering such traffic to a Home Agent (HA) are provided. In the method, a session server determines whether first and second mobile stations are connected with the same ASN GW by using their location information. In case of a connection with the same ASN GW, the session server establishes a local routing in the ASN GW so that traffic between the first and second mobile stations is directly routed to each other at the ASN GW. Then the ASN GW receiving the traffic from one of both mobile stations transmits the traffic to the other according to the local routing.Type: ApplicationFiled: December 16, 2009Publication date: June 24, 2010Applicant: SAMSUNG ELECTRONICS CO. LTD.Inventors: Sang Jun MOON, Sang Do LEE, Jong Woo HONG, Hyeon Jin KANG, Ji Hye HA
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Patent number: 7372835Abstract: An active handoff system and method of a dual mode terminal capable of connecting to a wireless network, such as wireless local area network (LAN), and a mobile communication system are provided. The handoff method includes the steps of assigning, at a packet data service node of the mobile communication system, an IP address to the dual mode terminal connected to the service network, establishing, at the packet data service node, a tunneling path to the wireless LAN when the dual mode terminal moves from the mobile communication network to the wireless LAN, and disconnecting, at the packet data service node, the tunneling path to the wireless LAN, and establishing a tunneling path to another packet data service node whose Internet Protocol (IP) address has been established by the packet data service node, when the dual mode terminal moves from the wireless LAN to the mobile communication system.Type: GrantFiled: October 11, 2005Date of Patent: May 13, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Do Lee, Ji Cheol Lee, Sung Won Lee
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Publication number: 20070088853Abstract: Provided is a communication method between an IPv6 mobile node and an IPv4-based correspondent node in a mobile IPv6 (MIPv6) environment, and more particularly, a communication method which can keep communication between a mobile node in an IPv6-based network and a correspondent node in an IPv4-based network, although the mobile node, which communicates with the node in the IPv4-based network, moves to a foreign network. In order to support mobility between the both networks, a DSTM gateway (or DSTM TEP) corresponding to a DSTM border router processes a binding update request received from an IPv6 mobile node.Type: ApplicationFiled: June 20, 2006Publication date: April 19, 2007Inventors: Sang Do Lee, Myung Ki Shin, Hyoung Jun Kim, Hyeong Ho Lee
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Patent number: 7128066Abstract: Disclosed is a diamond tool having a metal plate inserted therein. Between abrasive layers containing diamond particles is inserted a ferrous or non-ferrous metal plate having a wear resistance lower than that of the abrasive layers such that a concave groove is spontaneously formed during a cutting process, thereby reducing the contact load with a workpiece to thereby avoid vibration (wobbling) of a shank, and providing a discharge path for smoothly removing cutting chips and the cooling water. In addition, the content of abrasives and the wear resistance of bonding material are uniformly constituted so that the shrinkage rate does not need to be considered during sintering and the manufacturing process can be simplified, thereby reducing the manufacturing cost and improving the productivity therefor. Furthermore, the area of the metal plate can be controlled, thereby enabling an easy design conforming to the working conditions with a workpiece.Type: GrantFiled: April 28, 2005Date of Patent: October 31, 2006Assignee: Shihan Diamond Industrial Co., Ltd.Inventors: Hwan Chul Lee, Seo Pong Pyun, Sang Do Lee, Byung Lyul Jin, Sang Jin Lee, Tae Ung Um, Yong Seob Shim, Shin Kyung Kim
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Patent number: 6924229Abstract: A method for forming a semiconductor device having improved characteristics and reliability by forming a hard mask layer on a bit line to prevent degradation of characteristics of the device in a self-alignment contact process of a storage electrode is disclosed. The hard mask layer utilizes over-hang formed at the upper portion of the bit line so as to provide sufficient protection for the bit line in the subsequent etching processes.Type: GrantFiled: June 30, 2003Date of Patent: August 2, 2005Assignee: Hynix Semiconductor Inc.Inventors: Jung Taik Cheong, Sang Do Lee, Bong Ho Choi