Abstract: A laser processing system according to an embodiment of the present invention includes: a laser unit emitting a laser beam; an optical unit disposed on a propagation path of the laser beam and modulating the incident laser beam into a Bessel beam; a stage on which a workpiece to be processed with the Bessel beam emitted from the optical unit is mounted; and a control unit for controlling the operations of the laser unit, the optical unit, and the stage, wherein the optical unit is configured to position the focus line of the emitted Bessel beam on the workpiece and to move the focus line positioned on the workpiece with a predetermined range.

Abstract: A method of fabricating a polycrystalline silicon thin film transistor is disclosed. One embodiment of the method includes: forming an amorphous silicon layer on a panel; scanning a continuous wave laser beam having a wavelength range of about 600 to about 900 nm between a visible light range of a red color and a near infrared range onto the amorphous silicon layer to preheat the amorphous silicon layer; overlappingly scanning a pulse laser beam having a wavelength range of about 100 to about 550 nm between a visible light range and an ultraviolet range in addition to the continuous wave laser beam on the panel to melt the preheated amorphous silicon layer; and stopping scanning the pulse laser beam to crystallize the molten silicon layer.