Abstract: A memory device includes first interconnects extending in a first direction; a second interconnect extending in a second direction crossing the first interconnects; an insulating film provided between two first interconnects; and a resistance change film between the first interconnects and the second interconnect. The resistance change film includes a first layer and second layers, the first layer extending in the second direction along the second interconnect, and the second layers being provided selectively between the respective first interconnects and the first layer. The second layers protrude toward the second interconnect exceeding an end surface of the insulating film in a third direction from the respective first interconnects toward the second interconnect. The respective second layers have a surface on a side of the first interconnects, and a width in the second direction of the surface is wider than a width in the second direction of the first interconnect.

Abstract: A memory device includes first interconnects extending in a first direction; a second interconnect extending in a second direction crossing the first interconnects; an insulating film provided between two first interconnects; and a resistance change film between the first interconnects and the second interconnect. The resistance change film includes a first layer and second layers, the first layer extending in the second direction along the second interconnect, and the second layers being provided selectively between the respective first interconnects and the first layer. The second layers protrude toward the second interconnect exceeding an end surface of the insulating film in a third direction from the respective first interconnects toward the second interconnect. The respective second layers have a surface on a side of the first interconnects, and a width in the second direction of the surface is wider than a width in the second direction of the first interconnect.