Patents by Inventor Sangheon Lee

Sangheon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110146002
    Abstract: Provided are a washing method and washing machine. According to an aspect of the present invention, there is provided a washing method including: performing an eco-rinsing process where a drum rotates in a state where at least a portion of a laundry is pressed against an inner wall of the drum and wash water is sprayed into the drum; performing an intermediating process for reducing an RPM of the drum to an RPM at which at least a portion of the laundry is pressed against an inner wall of the drum; and performing an eco-rinsing process where the drum is accelerated and the wash water is sprayed into the drum.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 23, 2011
    Applicant: LG ELECTRONICS INC.
    Inventors: Changoh Kim, Jaehyun Kim, Jaewon Chang, Jongmin Lee, Sangheon Lee, Youngho Kim
  • Publication number: 20110099727
    Abstract: Provided is a method for washing laundry in a washing machine, wherein the washing machine includes a tub and a drum disposed inside the tub, the method comprising: supplying wash water mixed with detergent into the tub and spraying wash water changed to whirling water without detergent into the drum; circulating the wash water and rotating the drum, thereby the wash water soaking the laundry; and rotating the drum containing laundry soaked in the wash water.
    Type: Application
    Filed: November 2, 2010
    Publication date: May 5, 2011
    Applicant: LG ELECTRONICS INC.
    Inventors: Wooyoung Kim, Youngho Kim, Jaehyun Kim, Moonhee Hong, Changoh Kim, Kyungchul Woo, Myonghun Im, Sangheon Lee, Jaewon Chang, Sooyoung Oh, Jongmin Lee
  • Publication number: 20110099728
    Abstract: Provided is a method for washing laundry in a washing machine, wherein the washing machine includes a tub and a drum disposed inside the tub, the method comprising: supplying wash water into the tub; rotating the drum such that the laundry is attached the drum and spraying the wash water changed to whirling water into the drum; and draining the wash water from the tub.
    Type: Application
    Filed: November 2, 2010
    Publication date: May 5, 2011
    Applicant: LG ELECTRONICS INC.
    Inventors: Wooyoung KIM, Youngho Kim, Jaehyun Kim, Moonhee Hong, Changoh Kim, Kyungchul Woo, Myonghun Im, Sangheon Lee, Jaewon Chang, Sooyoung Oh, Jongmin Lee
  • Publication number: 20110100070
    Abstract: Provided is a washing machine. The washing machine includes a cabinet, a drum, and a whirling nozzle. The cabinet defines the exterior. The drum is provided in the cabinet, and rotates with laundry held therein. The whirling nozzle changes wash water into whirling water to spray the whirling water into the drum.
    Type: Application
    Filed: November 2, 2010
    Publication date: May 5, 2011
    Applicant: LG ELECTRONICS INC.
    Inventors: Wooyoung KIM, Youngho Kim, Jaehyun Kim, Moonhee Hong, Changoh Kim, Kyungchul Woo, Myonghun Im, Sangheon Lee, Jaewon Chang, Sooyoung Oh, Jongmin Lee
  • Publication number: 20110083477
    Abstract: A laundry treating apparatus, e.g., washing machine, and a tub provided in the cabinet. A drum is rotatably provided in the tub for receiving laundry, and a gasket is provided between the cabinet and the tub. A plurality of spray nozzles are provided at the gasket for spraying wash water into the drum.
    Type: Application
    Filed: October 12, 2010
    Publication date: April 14, 2011
    Inventors: Wooyoung KIM, Moonhee HONG, Kyungchul WOO, Sangheon LEE, Sooyoung OH, Myonghun IM
  • Patent number: 7910489
    Abstract: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: March 22, 2011
    Assignee: Lam Research Corporation
    Inventors: Ji Soo Kim, Peter Cirigliano, Sangheon Lee, Dongho Heo, Daehan Choi, S. M. Reza Sadjadi
  • Patent number: 7902073
    Abstract: A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: March 8, 2011
    Assignee: Lam Research Corporation
    Inventors: Ji Soo Kim, Sangheon Lee, Deepak K. Gupta, S. M. Reza Sadjadi
  • Publication number: 20100148317
    Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
    Type: Application
    Filed: February 24, 2010
    Publication date: June 17, 2010
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Sangheon LEE, Dae-Han CHOI, Jisoo KIM, Peter CIRIGLIANO, Zhisong HUANG, Robert CHARATAN, S.M. Reza SADJADI
  • Patent number: 7695632
    Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
    Type: Grant
    Filed: May 31, 2005
    Date of Patent: April 13, 2010
    Assignee: Lam Research Corporation
    Inventors: Sangheon Lee, Dae-Han Choi, Jisoo Kim, Peter Cirigliano, Zhisong Huang, Robert Charatan, S.M. Reza Sadjadi
  • Patent number: 7560388
    Abstract: A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: July 14, 2009
    Assignee: Lam Research Corporation
    Inventors: Jisoo Kim, Sangheon Lee, Daehan Choi, S. M. Reza Sadjadi
  • Patent number: 7541291
    Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: June 2, 2009
    Assignee: Lam Research Corporation
    Inventors: Sean S. Kang, Sangheon Lee, Wan-Lin Chen, Eric A. Hudson, S. M. Reza Sadjadi, Gan Ming Zhao
  • Patent number: 7442649
    Abstract: A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: October 28, 2008
    Assignee: Lam Research Corporation
    Inventors: Jisoo Kim, Sangheon Lee, Binet A. Worsham, Robert Charatan, S.M. Reza Sadjadi
  • Patent number: 7390749
    Abstract: A method for providing features in an etch layer with a memory region and a peripheral region is provided. A memory patterned mask is formed over a first sacrificial layer. A first set of sacrificial layer features is etched into the first sacrificial layer and a second sacrificial layer. Features of the first set of sacrificial layer features are filled with filler material. The first sacrificial layer is removed. The spaces are shrunk with a shrink sidewall deposition. A second set of sacrificial layer features is etched into the second sacrificial layer. The filler material and shrink sidewall deposition are removed. A peripheral patterned mask is formed over the memory region and peripheral region. The second sacrificial layer is etched through the peripheral patterned mask. The peripheral patterned mask is removed. Features are etched into the etch layer from the second sacrificial layer.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: June 24, 2008
    Assignee: Lam Research Corporation
    Inventors: Ji Soo Kim, Sangheon Lee, Daehan Choi, S. M. Reza Sadjadi
  • Publication number: 20080146032
    Abstract: A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.
    Type: Application
    Filed: December 14, 2006
    Publication date: June 19, 2008
    Inventors: Ji Soo Kim, Sangheon Lee, Deepak K. Gupta, S. M. Reza Sadjadi
  • Publication number: 20070293050
    Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
    Type: Application
    Filed: June 22, 2007
    Publication date: December 20, 2007
    Inventors: Sean Kang, Sangheon Lee, Wan-Lin Chen, Eric Hudson, S.M. Sadjadi, Gan Zhao
  • Patent number: 7294580
    Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
    Type: Grant
    Filed: June 3, 2004
    Date of Patent: November 13, 2007
    Assignee: Lam Research Corporation
    Inventors: Seokmin Yun, Ji Zhu, Peter Cirigliano, Sangheon Lee, Thomas S. Choi, Peter Loewenhardt, Mark H. Wilcoxson, Reza Sadjadi, Eric A. Hudson, James V. Tietz
  • Publication number: 20070193973
    Abstract: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
    Type: Application
    Filed: February 17, 2006
    Publication date: August 23, 2007
    Inventors: Ji Kim, Peter Cirigliano, Sangheon Lee, Dongho Heo, Daehan Choi, S. Sadjadi
  • Patent number: 7250371
    Abstract: A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
    Type: Grant
    Filed: August 26, 2003
    Date of Patent: July 31, 2007
    Assignee: Lam Research Corporation
    Inventors: Sean S. Kang, Sangheon Lee, Wan-Lin Chen, Eric A. Hudson, S. M. Reza Sadjadi, Gan Ming Zhao
  • Publication number: 20070123053
    Abstract: A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
    Type: Application
    Filed: November 30, 2005
    Publication date: May 31, 2007
    Inventors: Jisoo Kim, Sangheon Lee, Daehan Choi, S.M. Sadjadi
  • Publication number: 20070122977
    Abstract: A method for providing features in an etch layer with a memory region and a peripheral region is provided. A memory patterned mask is formed over a first sacrificial layer. A first set of sacrificial layer features is etched into the first sacrificial layer and a second sacrificial layer. Features of the first set of sacrificial layer features are filled with filler material. The first sacrificial layer is removed. The spaces are shrunk with a shrink sidewall deposition. A second set of sacrificial layer features is etched into the second sacrificial layer. The filler material and shrink sidewall deposition are removed. A peripheral patterned mask is formed over the memory region and peripheral region. The second sacrificial layer is etched through the peripheral patterned mask. The peripheral patterned mask is removed. Features are etched into the etch layer from the second sacrificial layer.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 31, 2007
    Inventors: Ji Kim, Sangheon Lee, Daehan Choi, S. Sadjadi