Abstract: An image sensor including a substrate, at least one transfer gate on a top surface of the substrate, a floating diffusion region located in the substrate and disposed apart from the at least one transfer gate in a first direction, the first direction being parallel to the top surface of the substrate, an intrinsic semiconductor region located in the substrate and disposed between the at least one transfer gate and the floating diffusion region in the first direction, and a photoelectric conversion region located in the substrate and disposed apart from the floating diffusion region in a second direction, wherein the second direction is perpendicular to the first direction, and wherein the intrinsic semiconductor region is an undoped region.

Abstract: An image sensor includes a substrate and a pixel separation portion disposed in the substrate and separating first pixels and second pixels from each other. The first pixels and the second pixels are alternately arranged in a first direction and a second direction which intersect each other. Each of the first pixels has a first width in the first direction. Each of the second pixels has a second width in the first direction, which is narrower than the first width. The pixel separation portion includes a main separation portion between the first and second pixels, and protrusions, each of which protrudes from a side surface of the main separation portion in at least one of the first and second directions. Ones of the protrusions protrude into a respective one of the first pixels to divide the respective one of the first pixels into a plurality of sub-pixels.

Abstract: An image sensor includes: a pixel array including a plurality of pixels, wherein each of the pixels includes first and second photodiodes, first and second transfer gates, and a plurality of active regions; and a logic circuit. Each of a plurality of pixel groups in the pixel array includes a first pixel and a second pixel. The active regions in each of the first pixel and the second pixel include a first active region and a second active region. The first active region is adjacent to the first transfer gate. The second active region is adjacent to the second transfer gate. In each of the pixel groups, a plurality of source-follower transistors respectively has a gate connected to the first and second active regions of the first pixel and connected to the first and second active regions of the second pixel. The source-follower transistors are in the first pixel.

Abstract: An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.

Abstract: An image sensor includes: a pixel array outputting a pixel signal; and a column wiring unit including at least one first column routing wiring extending from the pixel array and including a first connection wiring portion and a protrusion and at least one second column routing wiring including a second connection wiring portion, wherein a sum of lengths of the at least one first connection wiring portion and the protrusion is substantially identical to a length of the at least one second connection wiring portion; and a readout circuit receiving the pixel signal from the column wiring unit.

Abstract: An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.

Abstract: A pixel array for an image sensor includes: a first pixel including a floating diffusion node, and a first selection transistor configured to output a first pixel signal generated using a voltage of the floating diffusion node of the first pixel; a second pixel including a floating diffusion node, and a second selection transistor configured to output a second pixel signal generated using a voltage of the floating diffusion node of the second pixel; and a column line connected to the first and second selection transistors. The floating diffusion nodes of the first and second pixels may be configured to be electrically connected to each other, and the first selection transistor and the second selection transistor may be configured to be turned on so that the first pixel signal and the second pixel signal are output to the column line, in a low conversion gain mode.

Abstract: An image sensor includes a substrate having a sensing area, a floating diffusion region arranged in the sensing area, a plurality of photodiodes arranged around the floating diffusion region in the sensing area, and an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.

Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

Abstract: An image sensor includes: a pixel array outputting a pixel signal; and a column wiring unit including at least one first column routing wiring extending from the pixel array and including a first connection wiring portion and a protrusion and at least one second column routing wiring including a second connection wiring portion, wherein a sum of lengths of the at least one first connection wiring portion and the protrusion is substantially identical to a length of the at least one second connection wiring portion; and a readout circuit receiving the pixel signal from the column wiring unit.

Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.