Abstract: A novel senotherapy peptide and a method for senotherapy are disclosed. The method for sentherapy includes administering an effective amount thereof to a subject in need thereof. The novel senotherapy peptide suppresses the interaction between p53 and FOXO4 in the nucleus due to a better binding force with p53 than FOXO4, thereby allowing p53 to be released out of the nucleus and move to mitochondria to induce apoptosis of senescent cells and selectively induce the apoptosis of senescent cells in the skin cells.

Abstract: A lens assembly includes a first lens including an optical portion and a flange portion extending therefrom, a second lens disposed on one side of the first lens and a third lens disposed on another side of the first lens in an optical axis direction. The flange portion includes a first groove formed in one surface and a first protrusion disposed on another surface, the second lens includes a second protrusion disposed in the first groove, and the third lens includes a second groove in which the first protrusion is disposed. The second protrusion is spaced apart from an inner surface of the first groove and the first protrusion is spaced apart from an inner surface of the second groove in a direction perpendicular to the optical axis, wherein the inner surface of the first groove is closer to the optical axis than the inner surface of the second groove.

Abstract: Provided is a method and an apparatus for dry-cleaning an aluminum nitride (AlN) heater for semiconductor fabrication equipment, which may efficiently remove fluorine-containing contaminants generated on the AlN heater during semiconductor fabrication processes, and especially, may effectively and simultaneously remove organic, inorganic metallic, and inorganic contaminants. The method for dry-cleaning an AlN heater for semiconductor fabrication equipment includes steps of: determining a laser to be used for the AlN heater; determining laser control factors required for cleaning the AlN heater with respect to the laser to be used determined in the step of determining the laser to be used; and cleaning the AlN heater by laser irradiation based on the laser control factors determined in the step of determining the laser control factors.

Abstract: Provided are a method for preparing a polyetherketoneketone and a polyetherketoneketone prepared thereby, wherein, at the time of a polymerization reaction, nitrogen gas is blown into a liquid reaction medium while stirring, thereby quickly removing hydrochloric acid, which is a by-product generated during the reaction, and preventing aggregation of resin particles, thus suppressing the generation of scales.

Abstract: Provided is a steel sheet having: ferrite and pearlite composing 80% or more, in area fraction, of the microstructure; yield strength of 60 ksi or more; elongation of at least 23%; an n-value of at least 0.14; incidental impurities; and, in weight percent: C: 0.03˜0.10 Si: 0˜0.6 Mn: 0.5˜1.5 Cu: 0˜1.0 Ni: 0˜1.0 Nb: 0˜0.06 Ti: 0˜0.1 Mo: 0˜0.5% Cr: 0˜1.0 Al: 0˜0.06 N: 0.0001˜0.006 Ca: 0˜0.006 P: 0˜0.02 S: 0˜0.005.

Abstract: A method for producing polyether ketone ketone at a high yield is disclosed. According to the method, a catalyst injection rate is controlled during production to suppress scale formation, whereby the yield can be improved. A polyether ketone ketone produced by the method is disclosed. The method makes it possible to maintain an intrinsic viscosity (IV) of the polymer without a significant change and adjust a particle size of polyether ketone ketone by preventing an aggregation between resin particles, thereby suppressing scale formation.

Abstract: An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

Abstract: Provided is a steel sheet having: ferrite and pearlite composing 80% or more, in area fraction, of the microstructure; yield strength of 60 ksi or more; elongation of at least 23%; an n-value of at least 0.14; incidental impurities; and, in weight percent: C: 0.03˜0.10 Si: 0˜0.6 Mn: 0.5˜1.5 Cu: 0˜1.0 Ni: 0˜1.0 Nb: 0˜0.06 Ti: 0˜0.1 Mo: 0˜0.5% Cr: 0˜1.0 Al: 0˜0.06 N: 0.0001˜0.006 Ca: 0˜0.006 P: 0˜0.02 S: 0˜0.

Abstract: A temperature sensor, a processor including the same, and a method of operating the same are provided. The temperature sensor includes: a reference circuit configured to receive a supply voltage provided from outside the processor and utilized by a logic block of the processor for operation of the logic block, and generate, using the supply voltage, at least one temperature information signal that varies according to a temperature of the logic block and at least one reference signal that is substantially constant relative to the temperature of the logic block; and a digital temperature generator configured to receive the at least one temperature information signal and the at least one reference signal generated by the reference circuit, and generate a digital temperature information signal indicative of the temperature of the logic block based on the at least one temperature information signal and the at least one reference signal.

Abstract: An analog-to-digital converter configured to convert an analog signal into a digital signal includes a first converter configured to receive an input signal of an analog type, compare the input signal with a plurality of reference signals, select one of the plurality of reference signals based on the comparison, and output an upper bit that is a portion of the digital signal based on the selected reference signal, a second converter configured to perform an oversampling operation n times based on a residue signal indicating a difference between an upper analog signal corresponding to the upper bit value and the input signal and output an intermediate bit value of the digital signal corresponding to the first to n-th oversampling signals generated respectively during the oversampling operations performed n times, and a third converter configured to output a lower bit value of the digital signal corresponding to the n-th oversampling signal.

Abstract: The present invention relates to a method for preparing an aliphatic isocyanate capable of suppressing the occurrence of side reactions and the production of by-products. The method for preparing an aliphatic isocyanate comprises a step of reacting a salt of an aliphatic amine with phosgene, wherein the reaction step comprises a first reaction step in which phosgene is primarily added and reacted with the salt of an aliphatic amine salt at a temperature of 80 to 100° C., and a second reaction step in which phosgene is secondarily added and reacted with the resultant product of the first reaction step at a temperature of 120 to 160° C., and wherein the amount of the primarily added phosgene is a certain ratio of the total amount of the phosgene.

Abstract: The present invention relates to a method for preparing an aliphatic isocyanate capable of suppressing the occurrence of side reactions and the production of by-products. The method for preparing an aliphatic isocyanate comprises a step of reacting a salt of an aliphatic amine with phosgene, wherein the reaction step comprises a first reaction step in which phosgene is primarily added and reacted with the salt of an aliphatic amine salt at a temperature of 80 to 100° C., and a second reaction step in which phosgene is secondarily added and reacted with the resultant product of the first reaction step at a temperature of 120 to 160° C., and wherein the amount of the primarily added phosgene is a certain ratio of the total amount of the phosgene.

Abstract: An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

Abstract: Provided are a method for preparing a polyetherketoneketone and a polyetherketoneketone prepared thereby, wherein, at the time of a polymerization reaction, nitrogen gas is blown into a liquid reaction medium while stirring, thereby quickly removing hydrochloric acid, which is a by-product generated during the reaction, and preventing aggregation of resin particles, thus suppressing the generation of scales.

Abstract: The present invention relates to a method for preparing an aliphatic isocyanate capable of suppressing the occurrence of side reactions and the production of by-products. The method for preparing an aliphatic isocyanate comprises a step of reacting a salt of an aliphatic amine with phosgene, wherein the reaction step comprises a first reaction step in which phosgene is primarily added and reacted with the salt of an aliphatic amine salt at a temperature of 80 to 100° C., and a second reaction step in which phosgene is secondarily added and reacted with the resultant product of the first reaction step at a temperature of 120 to 160° C., and wherein the amount of the primarily added phosgene is a certain ratio of the total amount of the phosgene.

Abstract: Provided is a method capable of preparing high-purity aliphatic isocyanate, particularly, xylylene isocyanate in a high yield in a simple manner without an additional separate process, wherein when aliphatic isocyanate is prepared using phosgene, a side-reaction inhibitor capable of inhibiting side-reactions is introduced during phosgenation.

Abstract: A temperature sensor, a processor including the same, and a method of operating the same are provided.

Abstract: Provided is a method capable of preparing high-purity aliphatic isocyanate, particularly, xylylene isocyanate in a high yield in a simple manner without an additional separate process, wherein when aliphatic isocyanate is prepared using phosgene, a side-reaction inhibitor capable of inhibiting side-reactions is introduced during phosgenation.

Abstract: Provided is a method capable of preparing high-purity aliphatic isocyanate, particularly, xylylene isocyanate in a high yield in a simple manner without an additional separate process, wherein when aliphatic isocyanate is prepared using phosgene, a side-reaction inhibitor capable of inhibiting side-reactions is introduced during phosgenation.

Abstract: A temperature sensor, a processor including the same, and a method of operating the same are provided. The temperature sensor includes: a reference circuit configured to receive a supply voltage provided from outside the processor and utilized by a logic block of the processor for operation of the logic block, and generate, using the supply voltage, at least one temperature information signal that varies according to a temperature of the logic block and at least one reference signal that is substantially constant relative to the temperature of the logic block; and a digital temperature generator configured to receive the at least one temperature information signal and the at least one reference signal generated by the reference circuit, and generate a digital temperature information signal indicative of the temperature of the logic block based on the at least one temperature information signal and the at least one reference signal.