Abstract: Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.

Abstract: The present invention relates to a novel indole derivative and a use thereof. The novel indole derivative according to the present invention traps methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: The present invention relates to a composition for preventing, improving, or treating diseases related to advanced glycation end products, comprising an indole derivative or a pharmaceutically acceptable salt thereof. Specifically, the composition of the present invention possesses the effect of trapping methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: A method for manufacturing a flavor capsule of tobacco according to an embodiment of the present disclosure may comprise: a membrane manufacturing step for manufacturing a membrane of a flavor capsule by a membrane manufacturing part that manufactures a membrane; a capsule manufacturing step for manufacturing the flavor capsule using an apparatus for manufacturing a capsule with the membrane manufactured during the membrane manufacturing step and a flavored liquid to be held in the membrane; and a hardening step for hardening the flavor capsule.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A display apparatus can include a substrate having a penetrating area and a separating area, the penetrating area including a substrate hole, a first buffer layer having a first-buffer lower layer, and a first-buffer upper layer, a first thin film transistor including a first semiconductor pattern, a first gate electrode, and a first source electrode and a first drain electrode, a first interlayer insulating film; a second interlayer insulating film, an opening extending through the second interlayer insulating film, the first interlayer insulating film, the first gate insulating film and the first-buffer upper layer, and a separation structure in the opening, the separation structure including a first separation layer having a same stacked structure as the first-buffer upper layer, a second separation layer having a same stacked structure as the first gate insulating film, and a third separation layer having a same stacked structure as the first gate electrode.

Abstract: An optical imaging system includes a first lens having a convex image-side surface, a second lens having a concave object-side surface, a third lens, a fourth lens, and a fifth lens disposed sequentially from an object side. The optical imaging system satisfies 4.8<f/IMG_HT<9.0, where f is a focal length of the optical imaging system, and IMG_HT is half a diagonal length of an imaging surface of an image sensor.

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

Abstract: A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.

Abstract: A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

Abstract: A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.

Abstract: A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

Abstract: A shared pixel includes a plurality of photo diode regions, a shared floating diffusion region, a plurality of transfer gates and a blooming layer. Each of the photo diode regions generates photo-charges in response to incident light. The photo diode regions are formed in a semiconductor substrate. The shared floating diffusion region is shared by the plurality of photo diode regions. The shared floating diffusion region is separated from the plurality of photo diode regions in the semiconductor substrate. Each of the transfer gates transfers the photo-charges of a corresponding photo diode region to the shared floating diffusion region in response to a transfer control signal. The blooming layer transfers overflow photo-charges to a power supply voltage node.

Abstract: A battery pack includes one or more bare battery cells, a frame case, and a top case. Each of the bare battery cells has first and second electrode tabs. The frame case surrounds an outer surface of the one or more bare cells. The top case is coupled to the frame case at one end of the one or more bare cells. In the battery pack, the frame case includes a warp preventing portion parallel to the top case.

Abstract: A shared pixel includes a plurality of photo diode regions, a shared floating diffusion region, a plurality of transfer gates and a blooming layer. Each of the photo diode regions generates photo-charges in response to incident light. The photo diode regions are formed in a semiconductor substrate. The shared floating diffusion region is shared by the plurality of photo diode regions. The shared floating diffusion region is separated from the plurality of photo diode regions in the semiconductor substrate. Each of the transfer gates transfers the photo-charges of a corresponding photo diode region to the shared floating diffusion region in response to a transfer control signal. The blooming layer transfers overflow photo-charges to a power supply voltage node.

Abstract: A battery includes a pouch type case formed of a flexible material and the case has a bottom with a recess portion and a protrusion portion, an electrode assembly within the case, and a support member coupled to the recess portion and to the protrusion portion at the bottom of the case. The support member fixes shapes of the recess portion and the protrusion portion, and the support member is coupled to an outside of the case at the bottom of the case.

Abstract: A battery includes a pouch type case formed of a flexible material and the case has a bottom with a recess portion and a protrusion portion, an electrode assembly within the case, and a support member coupled to the recess portion and to the protrusion portion at the bottom of the case. The support member fixes shapes of the recess portion and the protrusion portion, and the support member is coupled to an outside of the case at the bottom of the case.

Abstract: In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

Abstract: A battery pack includes a bare cell that includes an electrode assembly, a case for accommodating the electrode assembly, and a cap plate arranged at one side of the case, a protection circuit board assembly for controlling charge/discharge of the bare cell, a battery protection device electrically connected to the protection circuit board assembly, and a first adhesive member. At least a part of the first adhesive member is disposed on the case. The first adhesive member crosses the battery protection device in a lengthwise direction of the battery protection device.

Abstract: A battery pack includes a plurality of bare cells, a protection device on the plurality of bare cells, a connecting tab configured to electrically couple the bare cells to the protection device, and a protective circuit module positioned on the bare cells. The protective circuit module has a plurality of openings at positions where the connecting tab is coupled with the bare cells and/or the protection device.