Patents by Inventor Sang-joon Ryu

Sang-joon Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of measuring and controlling inner temperature of a chamber included in a test handler
    Patent number: 9261555
    Abstract: To measure an inner temperature of a chamber included in a test handler, self-refresh currents of semiconductor memory devices under test are measured. The semiconductor memory devices are disposed in the chamber and have a function of linear temperature compensated self-refresh (Li-TCSR). Local temperature values are generated based on the self-refresh currents, where each local temperature value indicates a temperature near the corresponding semiconductor memory device of the semiconductor memory devices under test.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: February 16, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyu Yoon, Sang-Joon Ryu, Hwa-Cheol Lee, Yong-Hwan Cho
  • Semiconductor memory device including post package repair control circuit and post package repair method
    Patent number: 7746712
    Abstract: Provided are a semiconductor memory device having a post package repair control circuit and a post package repair method. In the semiconductor memory device and the post package repair method, in a post package repair mode, a second memory bank is used as a fail bit map memory for storing failed bit information regarding a first memory bank, and the first memory bank is used as a fail bit map memory for storing failed bit information regarding the second memory bank.
    Type: Grant
    Filed: April 4, 2008
    Date of Patent: June 29, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-sung Kang, Byung-heon Kwak, Hyun-soon Jang, Seung-whan Seo, Sang-joon Ryu, Hyun-tae Lim
  • Semiconductor memory device including post package repair control circuit and post package repair method
    Publication number: 20080247243
    Abstract: Provided are a semiconductor memory device having a post package repair control circuit and a post package repair method. In the semiconductor memory device and the post package repair method, in a post package repair mode, a second memory bank is used as a fail bit map memory for storing failed bit information regarding a first memory bank, and the first memory bank is used as a fail bit map memory for storing failed bit information regarding the second memory bank.
    Type: Application
    Filed: April 4, 2008
    Publication date: October 9, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae-sung Kang, Byung-heon Kwak, Hyun-soon Jang, Seung-whan Seo, Sang-joon Ryu, Hyun-tae Lim