Abstract: The present invention relates a negative electrode for a lithium secondary battery, and a lithium secondary battery comprising same, wherein the negative electrode for a lithium secondary battery comprises a current collector, and a negative electrode active material layer including a first layer formed on the current collector and a second layer formed on the first layer, the first layer containing a first carbon-based negative electrode active material, and the second layer containing a second carbon-based negative electrode active material, wherein the degree of divergence (DD) value of the first layer is 30-90% of the DD value of the negative electrode active material layer, the DD value is defined by formula 1 below. DD (Degree of Divergence)=(Ia/Itotal)*100??[Formula 1] (In formula 1, Ia is the sum of peak intensities of peaks at out-of plane angles as measured by XRD with CuK?, and Itotal is the sum of peak intensities of peaks at all angles as measured by XRD with CuK?).

Abstract: A display module including a display unit and a support member disposed below the display unit and including first areas and second areas. The support member includes a matrix, a first supporter disposed in the matrix and including first extension parts, each extending in a first direction and spaced apart from each other in a second direction crossing the first direction, and a second supporter disposed in the matrix and including second extension parts, each extending in the first direction and spaced apart from each other in the second direction, and connection parts disposed between the second extension parts, where the second extension parts and the connection parts define openings in the second supporter.

Abstract: In a refrigerator, a cam of a cam gear rotating by a driving motor is provided with a structure protruding from an edge portion of a cam gear to a center, thereby increasing the thickness of a cam surface. Therefore, it is possible to reduce the magnitude of force directly transferred from the cam gear to a magnet lever.

Abstract: Semiconductor wafer processing methods for processing a set of semiconductor wafers includes positioning a cassette within a wet bath with an automated guided vehicle (AGV), guiding the cassette within the wet bath, transferring the wafer from a transfer location to the cassette with a transfer robot; and removing the cassette and the wafer from the wet bath with the AGV.

Abstract: Methods of semiconductor processing may include forming plasma effluents of a plurality of precursors (e.g., an etchant precursor, an oxygen-containing precursor, and a silicon-and-fluorine-containing precursor like silicon tetrafluoride). The plasma effluents may then contact a silicon-containing material and a mask material on a substrate in a processing region of a semiconductor processing chamber. The mask material may have one or more apertures therein that allow the plasma effluents access to the silicon-containing material. Contacting the silicon-containing material and the mask material with the plasma effluents may cause (i) etching the silicon-containing material with the plasma effluents to form and/or deepen one or more features in the silicon-containing material and (ii) simultaneously etching the mask material and depositing a silicon-and-oxygen-containing material on the mask material with the plasma effluents.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. A method for providing an integrated sensing service in a wireless communication system is provided. The method includes receiving, from a first device, a request message for requesting a sensing service related to at least one sensing node, transmitting, to an access and mobility management function (AMF) related to the at least one sensing node, a transfer request message for requesting sensing service activation based on the request message, and receiving, from the at least one sensing node, at least one sensing event notification message including a sensing result based on the request message.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. According to the disclosure, a 3GPP 5GS (5G System) may provide a multiple-access-based network selection function for selecting a network for multiple 3GPP accesses in order to provide multiple 3GPP accesses to a wireless terminal.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. A method for operating a sensing network function in a communication system supporting integrated sensing and communication (ISAC), according to an embodiment, may comprise receiving a first request message for a sensing service, transmitting a second request message for requesting sensing policy data based on the first request message, and receiving a response message corresponding to the second request message and including sensing service quality information.

Abstract: The disclosure provides a method, performed by a user equipment (UE), of processing a non-access stratum (NAS) message, the method including: receiving a paging request message from an access and mobility management function (AMF); transmitting a service request message to the AMF; receiving a service accept message from the AMF; receiving a session management message from a session management function (SMF); and after receiving the session management message, receiving a UE configuration update command message from the AMF.

Abstract: A VCM (voice coil motor) is disclosed, the VCM including: a rotor including a cylindrical bobbin for accommodating a lens and protruded at a bottom end with a boss, and a coil block arranged at a periphery of the bobbin; a stator including a magnet facing the coil block and a yoke fixing the magnet; and an elastic member including a first elastic member formed with a through hole coupled to the boss of the bobbin and a second elastic member coupled to an upper end facing the bottom end of the bobbin; wherein the boss is formed with a disengagement prevention unit inhibiting the first elastic member from being disengaged from the boss, and the first elastic member is formed with a coupling unit contacting a joint where the disengagement prevention unit and the coupling unit meet.

Abstract: An integrated circuit device including a substrate having a cell and interconnection region; and a first stacked structure and a second stacked structure on the first stacked structure, each of the first and second stacked structures including insulating layers and word line structures that are alternately stacked one by one on the substrate in the cell region and the interconnection region, wherein, in the interconnection region the first stacked structure includes a first dummy channel hole penetrating through the first stacked structure, the second stacked structure includes a second dummy channel hole communicatively connected to the first dummy channel hole, the second dummy channel hole penetrating through the second stacked structure, respectively, and a first dummy upper width of an uppermost end of the first dummy channel hole is greater than a second dummy upper width of an uppermost end of the second dummy channel hole.

Abstract: A coil electronic component may include a magnetic body including first and second surfaces facing each other in a first direction, third and fourth surfaces facing each other in a second direction and connecting the first surface and the second surface, and fifth and sixth surfaces facing each other in a third direction and connecting the first surface and the second surface, a coil embedded in the magnetic body, a first external electrode disposed on the sixth surface and extending onto a portion of the first surface and connected to the coil, a second external electrode disposed on the sixth surface and extending onto a portion of the second surface and connected to the coil, a first insulation layer covering the first external electrode on the first surface of the magnetic body, and a second insulation layer covering the second external electrode on the second surface of the magnetic body.

Abstract: Provided is an aluminum alloy for die casting. The aluminum alloy includes: 3-10 wt % silicon (Si); 0.1-2.0 wt % magnesium (Mg); 0.01-1.3 wt % iron (Fe); 0.01-2.0 wt % zinc (Zn); 0.01-1.5 wt % copper (Cu); 0.01-0.5 wt % manganese (Mn); 0.01-0.5 wt % chrome (Cr); 0.01˜2.0 wt % lanthanum (La); 0.01˜2.0 wt % cerium (Ce); 0.01˜2.0 wt % strontium (Sr); rest aluminum (Al); and unavoidable impurities. The aluminum alloy is improved in not only corrosion-resistance but also physical properties.

Abstract: A display device includes a first roller in which a cavity extending in a first direction is defined and including an end surface and an opposite end surface facing each other at an incision extending in the first direction, a step adjustment part that is disposed in the cavity and that adjusts a step between the end surface and the opposite end surface by a rotary motion, and a display module connected to the first roller and wound around an outer circumferential surface of the first roller.

Abstract: The present invention defines signaling required for separating a network entity (NE) responsible for mobility management (MM) and session management (SM), which are main function of a control plane (CP) in a next generation (NextGen) mobile communication system, and presents a basic procedure for providing mobile communication services including the signaling. Therefore, complexity of core equipment responsible for the CP is reduced in order to implement a network slice function and provide various levels of mobility, and an effect of minimizing a signaling load therebetween can be obtain. In addition, it is possible to efficiently manage the resources of a base station (radio access network (RAN)) and a user plane network entity (UP NF).

Abstract: A semiconductor device has a PCB with an antenna and a semiconductor package mounted onto the PCB. An epoxy molding compound bump is formed or disposed over the PCB opposite the semiconductor package. A first shielding layer is formed over the PCB. A second shielding layer is formed over the semiconductor package. A board-to-board (B2B) connector is disposed on the PCB or as part of the semiconductor package. A conductive bump is disposed between the semiconductor package and PCB.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. A method for handling a local area data network (LADN) service area in a wireless network is provided. The method performed by an access and mobility management function (AMF) entity in a wireless communication system includes receiving, from a user equipment (UE), capability information indicating that the UE supports a local area data network (LADN) per data network name (DNN) and single network slice selection assistance information (S-NSSAI), identifying an LADN service area for a DNN and an S-NSSAI, and transmitting, to the UE, information on the DNN, information on the S-NSSAI, and information on the LADN service area.

Abstract: The present invention relates to a dendritic cell-mimicked nanostructure and a fabrication method therefor and, more specifically, to a nanostructure in which a shell including a cell membrane of dendritic cell-derived lipid molecules is introduced to a nanoparticle core in order to take advantage of the surface antigen-presenting ability of dendritic cells and which enables targeting without disappearance in vivo, thereby providing an effect of inducing an effective immune response.

Abstract: According to an embodiment of the inventive concept, a magnetic memory device includes a substrate on which a transistor controlled by a word line is disposed, a spin detection layer disposed on the substrate, and a magnon spin valve disposed on the spin detection layer. Here, the magnon spin valve includes a free layer disposed on the spin detection layer, a reference layer disposed on the free layer, and a spacer disposed between the free layer and the reference layer. Also, one edge of the spin detection layer is connected to a source/drain region of the transistor, the other edge of the spin detection layer is connected to a source line, and the magnon spin valve is disposed on a portion between the one edge and the other edge of the spin detection layer. The spin detection layer includes a topological material or a weyl semimetal. Each of the reference layer and the free layer includes a ferromagnetic insulator.

Abstract: The thermoplastic ABS molding composition comprises at least one thermoplastic copolymer matrix A, at least one ABS-copolymer B, optionally one or more polymers C, and one or more additives D, wherein, in the thermoplastic ABS molding composition, in particular after thermoplastic processing by extrusion, thermoforming and/or injection molding, the grafted rubber of component B is present in form of small particles.