Abstract: Provided are an electrostatic chuck, which is manufactured to be reusable by removing a part of a dielectric layer except for a DC electrode and a heater electrode and depositing a new dielectric layer thereon, and a method for manufacturing the electrostatic chuck, and a substrate processing system including the electrostatic chuck. The method for manufacturing the electrostatic chuck includes, after using an electrostatic chuck, removing a portion of an upper part of a first dielectric layer of the electrostatic chuck where an electrode is not formed, depositing a second dielectric layer on the first dielectric layer from which the portion of the upper part has been removed, and patterning the second dielectric layer to enable reuse of the electrostatic chuck.

Abstract: The inventive concept provides an apparatus for treating a substrate. A substrate treatment apparatus according to an embodiment includes a housing having a treatment space in which the substrate is treated, a support unit that supports the substrate in the treatment space, and a gas supply unit that supplies a gas to the treatment space, wherein a heat transfer flow path that supplies a heat transfer medium to the substrate supported by the support unit, a pin hole defining an elevation path of a lift pin that elevates the substrate supported by the support unit, and a connection portion allowing the heat transfer flow path and the pin hole to be in communication with each other are formed inside the support unit, and the connection portion includes a porous structure.

Abstract: Proposed is a substrate support unit, a method of manufacturing the same, and a substrate processing apparatus including the same. The substrate support unit includes a base component, a chucking component mounted on the base component, and an intermediate layer interposed between the base component and the chucking component, wherein the intermediate layer includes a joining part formed in a partial region to couple the base component and the chucking component.

Abstract: The present invention relates to a substrate supporting member and a substrate processing method. A gas flow path supplying a heat transfer gas to a rear surface of a substrate is provided in the substrate supporting member according to an embodiment of the present invention. Furthermore, a gas flow restricting member restricting gas flow to a different extent from each other according to a direction of the gas flow is provided at the gas flow path or at an external heat transfer gas supply pipe connected to the gas flow path. According to the present invention, by providing the gas flow restricting member restricting the gas flow to a different extent from each other according to the direction of the gas flow, there are effects of minimizing the time required for exhausting the heat transfer gas while preventing the arcing from occurring in a heat transfer gas flow path.

Abstract: An electrostatic chuck that fixes a work substrate by an electrostatic force, the electrostatic chuck is disclosed. The electrostatic chuck includes a dielectric plate being configured to support the work substrate, a base plate being configured to support the dielectric plate and an adsorption electrode interposed between the dielectric plate and the base plate, and being configured to generate an electrostatic force for adsorbing the work substrate. The dielectric plate is a sapphire plate, the base plate consists of a alumina ceramic material, the adsorption electrode has a resistance change rate of 20% or less in a range of ?200° C. to 400° C., and the dielectric plate and the base plate are integrally bonded through the adsorption electrode.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber that provides a treatment space in an interior thereof, a support unit that supports a substrate in the treatment space, a gas supply unit that supplies a process gas into the treatment space, and a plasma source that generates plasma from the process gas, the support unit includes a support plate, on which the substrate is positioned, and an edge ring assembly that surrounds the substrate supported on the support plate, and that forms the plasma in the substrate, and the edge ring assembly includes a focusing ring formed of a first material, and that forms distribution of the plasma in the substrate, and a cover ring provided in an area of the substrate, and including a reinforced surface layer provided by injecting a network modifier into an empty site of the network structure.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

Abstract: An electrostatic chuck according to the present disclosure includes: a dielectric plate embedded with an electrode and configured to electrostatically hold a substrate; a base plate disposed below the dielectric plate; and a heating unit provided in the base plate and configured to independently heat a plurality of regions of the substrate, such that temperatures of the plurality of regions of the substrate may be independently controlled, thereby improving uniformity of the temperature of the substrate.

Abstract: The present disclosure provides an electrostatic chuck, in which a heat transfer layer using a heat transfer fluid is disposed between a chuck main body disposed at an upper side of the electrostatic chuck and a chuck base disposed at a lower side of the electrostatic chuck, and the chuck main body is simply placed on the chuck base so as to be physically in contact with the heat transfer layer, such that heat may be stably transferred without damage even in a condition in which the heat transfer layer is at a high temperature, and the chuck main body may be easily separated from the chuck base for maintenance.

Abstract: An apparatus comprises a housing having a process space, a support unit supporting the substrate in the process space, a process gas supply unit supplying a process gas into the process space, and a plasma source generating plasma from the process gas. The support unit comprises a support member on which the substrate is placed, a heating member that heats the substrate supported on the support member, and a heat transfer gas supply member that supplies a heat transfer gas to a backside of the substrate. The heating member comprises heaters that heat regions on the substrate on the support member viewed from above. The support member comprises a protrusion that partitions a space between the support member and the backside of the substrate placed on the support member into gas regions, and at least one of heating regions is divided into regions by the protrusion viewed from above.

Abstract: Embodiments of the inventive concept provide an apparatus and method for storing a substrate. A buffer unit for storing a substrate includes a housing having an entrance formed at one side and a buffer space inside, a substrate support unit that supports one or more substrates in the buffer space, a pressure adjustment unit that adjusts pressure in the buffer space, and a controller that controls the pressure adjustment unit. The pressure adjustment unit includes a gas supply line that supplies a gas for pressurizing the buffer space and a gas exhaust line that reduces the pressure in the buffer space. At least one of the gas supply line and the gas exhaust line includes a plurality of lines.

Abstract: An apparatus for supporting a substrate is proposed. The apparatus includes: a base plate including at least one first gas supply hole formed therein so as to allow supply of a temperature control gas; and an electrostatic chuck provided on the base plate to support the substrate, and including at least one second gas supply hole formed therein so as to be in communication with the at least one first gas supply hole, wherein the at least one second gas supply hole is formed before sintering of the electrostatic chuck.

Abstract: Provided are an electrostatic chuck, which is manufactured to be reusable by removing a part of a dielectric layer except for a DC electrode and a heater electrode and depositing a new dielectric layer thereon, and a method for manufacturing the electrostatic chuck, and a substrate processing system including the electrostatic chuck. The method for manufacturing the electrostatic chuck includes, after using an electrostatic chuck, removing a portion of an upper part of a first dielectric layer of the electrostatic chuck where an electrode is not formed, depositing a second dielectric layer on the first dielectric layer from which the portion of the upper part has been removed, and patterning the second dielectric layer to enable reuse of the electrostatic chuck.

Abstract: Provided is a focus ring and a substrate treating apparatus having the focus ring. The substrate treating apparatus includes a process chamber for providing a process treating space for a substrate, a chuck for supporting the substrate and a focus ring arranged to surround an edge of the chuck, wherein the focus ring includes a plurality of layers having different properties, wherein a bonding surface between the plurality of layers is formed in a predetermined pattern.

Abstract: Provided are a wafer support unit, in which a dam is installed outside an O-ring to prevent the O-ring from being etched, and a wafer treatment system including the wafer support unit. The wafer treatment system includes: a housing; a shower head introduces a process gas for etching a wafer into the housing; and a support unit includes an electrostatic chuck on which the wafer is mounted, a base supporting the electrostatic chuck, and a focus ring installed on side surfaces of the electrostatic chuck, wherein the support unit includes: a fixing component which fixes the focus ring to the base; a sealing component which is disposed between the focus ring and the base to seal a circumference of a fastening component; and a dam component which is installed outside the sealing component to prevent the sealing component from being etched by the process gas.

Abstract: An electrostatic chuck that fixes a work substrate by an electrostatic force, the electrostatic chuck is disclosed. The electrostatic chuck includes a dielectric plate being configured to support the work substrate, a base plate being configured to support the dielectric plate and an adsorption electrode interposed between the dielectric plate and the base plate, and being configured to generate an electrostatic force for adsorbing the work substrate. The dielectric plate is a sapphire plate, the base plate consists of a alumina ceramic material, the adsorption electrode has a resistance change rate of 20% or less in a range of ?200° C. to 400° C., and the dielectric plate and the base plate are integrally bonded through the adsorption electrode.

Abstract: An apparatus for supporting a substrate is proposed. The apparatus includes: a base plate including at least one first gas supply hole formed therein so as to allow supply of a temperature control gas; and an electrostatic chuck provided on the base plate to support the substrate, and including at least one second gas supply hole formed therein so as to be in communication with the at least one first gas supply hole, wherein the at least one second gas supply hole is formed before sintering of the electrostatic chuck.

Abstract: An apparatus comprises a housing having a process space, a support unit supporting the substrate in the process space, a process gas supply unit supplying a process gas into the process space, and a plasma source generating plasma from the process gas. The support unit comprises a support member on which the substrate is placed, a heating member that heats the substrate supported on the support member, and a heat transfer gas supply member that supplies a heat transfer gas to a backside of the substrate. The heating member comprises heaters that heat regions on the substrate on the support member viewed from above. The support member comprises a protrusion that partitions a space between the support member and the backside of the substrate placed on the support member into gas regions, and at least one of heating regions is divided into regions by the protrusion viewed from above.

Abstract: Embodiments of the inventive concept provide an apparatus and method for storing a substrate. A buffer unit for storing a substrate includes a housing having an entrance formed at one side and a buffer space inside, a substrate support unit that supports one or more substrates in the buffer space, a pressure adjustment unit that adjusts pressure in the buffer space, and a controller that controls the pressure adjustment unit. The pressure adjustment unit includes a gas supply line that supplies a gas for pressurizing the buffer space and a gas exhaust line that reduces the pressure in the buffer space. At least one of the gas supply line and the gas exhaust line includes a plurality of lines.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.