Abstract: An apparatus for improving turning performance of a vehicle includes: a turning characteristic detection module configured to detect a turning situation based on vehicle information obtained from at least one sensor and to calculate a required driving force to be implemented in the vehicle for a turning motion; a driving force estimation module configured to estimate a limited driving force applicable to a drive wheel; and a turning characteristic control module configured to control and apply a braking force corresponding to a difference between the required driving force and the limited driving force to a motor to inhibit a wheel slip, when the required driving force is greater than the limited driving force.

Abstract: An example electronic device includes a housing; a touchscreen display; a microphone; at least one speaker; a button disposed on a portion of the housing or set to be displayed on the touchscreen display; a wireless communication circuit; a processor; and a memory. When a user interface is not displayed on the touchscreen display, the electronic device enables a user to receive a user input through the button, receives user speech through the microphone, and then provides data on the user speech to an external server. An instruction for performing a task is received from the server. When the user interface is displayed on the touchscreen display, the electronic device enables the user to receive the user input through the button, receives user speech through the microphone, and then provides data on the user speech to the external server.

Abstract: A display device includes a scan write line, a PWM emission line, a PAM emission line, a sweep signal line, a first data line, a second data line, and a subpixel connected thereto, and including a light emitting element, a first pixel driver to supply a control current to a node according to the first data voltage in response to the PWM emission signal, a second pixel driver to generate a driving current according to the second data voltage in response to the PWM emission signal, and a third pixel driver to supply the driving current to the light emitting element according to the PAM emission signal and a voltage of the node, wherein the PWM emission signal includes a plurality of PWM pulses, the PAM emission signal includes a plurality of PAM pulses, and a number of the PWM pulses is greater than a number of the PAM pulses.

Abstract: The present disclosure relates to a display apparatus including a plurality of display modules, and a hinge assembly connecting the plurality of display modules, wherein the hinge assembly comprises a pair of brackets rotatably coupled to each other to adjust an angle between the plurality of display modules, a moving block is mounted on each of the pair of brackets to be coupled to the display module, and the moving block is configured to slidingly move with respect to the bracket to adjust a spacing between the plurality of display modules. With this structure, the angle between the plurality of display modules may be variously varied according to an installation environment.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: A display device includes connection lines, pulse amplitude modulation (PAM) data lines configured to receive pulse width modulation (PWM) data voltages, PWM data lines configured to receive the PWM data voltages, a first connection control line configured to receive a first connection control signal, a second connection control line configured to receive a second connection control signal, subpixels connected to the PWM data lines and the PAM data lines, and a first demultiplexer (demux) unit configured to connect the connection lines to the PAM data lines or to the PWM data lines according to the first connection control signal and the second connection control signal.

Abstract: An inspection device for painted surface with a base layer and a clear layer painted on the base layer of a vehicle includes a frame mounted to an arm of a robot, a line scan camera, a first light source lighting up at a predetermined angle is provided thereto, which is mounted to the frame, and the line scan camera which acquires first vision data through the regular reflection light from the painted surface using the light of the first light source, and a controller which receives the first vision data from the line scan camera and detects surface defect of the painted surface according to the first vision data.

Abstract: An inspection device for painted surface with a base layer and a clear layer painted on the base layer of a vehicle includes a frame mounted to an arm of a robot, a line scan camera, a first light source lighting up at a predetermined angle is provided thereto, which is mounted to the frame, and the line scan camera which acquires first vision data through the regular reflection light from the painted surface using the light of the first light source, and a controller which receives the first vision data from the line scan camera and detects surface defect of the painted surface according to the first vision data.

Abstract: Disclosed are a phase change memory device in which an active time is reduced and a method of discharging a bitline in the phase change memory device. In the phase change memory device having the reduced active time and the method of discharging the bitline in the phase change memory device, the bitline is either always discharged when the phase change memory device is in standby, is discharged after the active operation of the phase change memory device, or is discharged prior to and after the active operation of the phase change memory device.

Abstract: Disclosed are a phase change memory device in which an active time is reduced and a method of discharging a bitline in the phase change memory device. In the phase change memory device having the reduced active time and the method of discharging the bitline in the phase change memory device, the bitline is either always discharged when the phase change memory device is in standby, is discharged after the active operation of the phase change memory device, or is discharged prior to and after the active operation of the phase change memory device.

Abstract: A phase-change random access memory (PRAM) device includes a PRAM cell array having a first bank that includes first to mth sectors, where m is a positive integer of at least 2, and sense amplifiers disposed between an xth sector and an (x+1)th sector of the bank, where x is a positive integer less than m.

Abstract: There is provided an internal voltage generating circuit that reliably supplies a constant internal voltage to the interior of a semiconductor device without regard to an external voltage, where the internal voltage generating circuit compares a first reference voltage with a first internal voltage fed back to generate the first internal voltage following the first reference voltage, receives the first internal voltage to generate a second reference voltage which is more insensitive to fluctuation of the external voltage than the first reference voltage, and compares the second reference voltage with a second internal voltage fed back to generate the second internal voltage which follows the second reference voltage and has a variation gradient smaller than that of the first internal voltage when the external voltage is changed, thereby supplying the second internal voltage to a circuit requiring stabilized internal voltage, which is obtained to increase stability and durability of the operation of the semico

Abstract: A fuse circuit according to the present invention includes first and second fuses, each of which has a first end and a second end. The first and second ends of the first fuse are connected in a straight line. The first end of the second fuse is spaced by a first interval from the first end of the first fuse, and the second end thereof is spaced by a second interval from the second end of the first fuse. The first ends of the first and second fuses have the same widths as those of the second ends thereof. Alternatively, the first ends of the first and second fuses have narrower widths that those of the second ends thereof.

Abstract: There is provided an internal voltage generating circuit that reliably supplies a constant internal voltage to the interior of a semiconductor device without regard to an external voltage, where the internal voltage generating circuit compares a first reference voltage with a first internal voltage fed back to generate the first internal voltage following the first reference voltage, receives the first internal voltage to generate a second reference voltage which is more insensitive to fluctuation of the external voltage than the first reference voltage, and compares the second reference voltage with a second internal voltage fed back to generate the second internal voltage which follows the second reference voltage and has a variation gradient smaller than that of the first internal voltage when the external voltage is changed, thereby supplying the second internal voltage to a circuit requiring stabilized internal voltage, which is obtained to increase stability and durability of the operation of the semico

Abstract: A fuse circuit according to the present invention includes first and second fuses, each of which has a first end and a second end. The first and second ends of the first fuse are connected in a straight line. The first end of the second fuse is spaced by a first interval from the first end of the first fuse, and the second end thereof is spaced by a second interval from the second end of the first fuse. The first ends of the first and second fuses have the same widths as those of the second ends thereof. Alternatively, the first ends of the first and second fuses have narrower widths that those of the second ends thereof.

Abstract: A nonvolatile semiconductor integrated circuit having a cell array consisting of a plurality of memory strings each having first to N-th (N=2, 3, 4, . . . ) memory cell transistors of a NAND structure includes a plurality of first string select transistors connected in series to the first memory cell transistor, and a plurality of second string select transistors connected in series to the N-th memory cell transistor. One of the string select transistors serially connected to the first and N-th memory cell transistors has a control terminal connected to a ground connecting point, thus to have a ground select function as well as a string select function.

Abstract: The present invention provides a redundancy circuit in a semiconductor memory device which has spare memory cells which can store information that can be substituted for data of defective memory cells after the completion of the manufacturing process. If addresses designating the defective memory cells are externally input, the redundancy circuit generates a defective cell relief address signal which corresponds to the address designating the defective memory cell and is used to prevent defective data stored in normal memory cells from being output and causes correction data, to be substituted for the defective data output in correspondence with the defective cell relief address.

Abstract: A nonvolatile semiconductor memory with a unit cell structure suitable for high speed operation and a low power supply voltage. The nonvolatile semiconductor memory includes a switching circuit including block select transistors connected by its respective terminal to a corresponding bit line. This switching circuit transmits a signal only when a string to which the switching circuit corresponds is selected. A second active region having a different impurity concentration from a first active region constituting source and drain regions of memory transistors is formed at a substrate contact portion of a bit line contact portion where the memory string and bit line are connected. The impurity concentration of the second active region is lower than that of the first active region.

Abstract: A nonvolatile semiconductor memory with a unit cell structure suitable for high speed operation and a low power supply voltage. The nonvolatile semiconductor memory includes a switching circuit including block select transistors connected by its respective terminal to a corresponding bit line. This switching circuit transmits a signal only when a string to which the switching circuit corresponds is selected. A second active region having a different impurity concentration from a first active region constituting source and drain regions of memory transistors is formed at a substrate contact portion of a bit line contact portion where the memory string and bit line are connected. The impurity concentration of the second active region is lower than that of the first active region.

Abstract: A memory cell device having circuitry located between memory cell arrays comprises power and ground lines to the circuitry formed directly above the memory cell arrays. The power and ground lines are parallel and positioned in an adjacent alternating pattern such that a power line is positioned adjacent a ground line, which is positioned adjacent another power line and so on. Signal lines carrying signals to and from the circuitry are also formed directly above memory cell arrays.