Abstract: An erase method of a nonvolatile memory device is provided which includes receiving an erase request; selecting an erase mode of a memory block corresponding to the erase request, based on an access condition of the nonvolatile memory device managed by a memory controller; and controlling the nonvolatile memory device to erase the memory block according to the selected erase mode. The erase mode includes a fast erase mode of which an erase time for the memory block is shorter than a reference time and a slow erase mode of which an erase time for the memory block is longer than the reference time.

Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller managing the nonvolatile memory device. The operation method includes receiving a read command and a read address from an external device, reading read data stored in memory cells connected to a selected word line of a selected memory block corresponding to the read address in response to the read command, and detecting and correcting error bits of the read data. The method includes estimating the number of error bits of unselected word lines on the basis of erase leaving times of memory cells connected to the unselected word lines of the selected memory block and the detected error bits, and performing read-reclaim operation on at least one word line among the selected word line and the unselected word lines on the basis of the estimated number of error bits.

Abstract: An operation method of a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory, includes transmitting a multi-program command to the nonvolatile memory by the memory controller; and programming memory cells connected to two or more word lines by the nonvolatile memory in response to the multi-program command.

Abstract: A method of operating a memory device includes: determining an erase mode based on a number of erase cycles performed on a memory block and an erase voltage utilized to perform each erase cycle; and setting an erase voltage level for executing an erase operation on the memory block based on the determined erase mode.

Abstract: A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.

Abstract: A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.

Abstract: Embodiments include a method of operating a storage device including a flash memory, comprising: calculating a reuse period of a selected memory block in the flash memory; determining a set of wordlines of the selected memory block for writing data based on the reuse period of the selected memory block; and writing the data into the set of wordlines.

Abstract: A method for operating a storage device including a flash memory, comprising: determining a data reliability level of the flash memory; comparing the data reliability level with a threshold; and changing an operating condition of the flash memory to improve the data reliability level of the flash memory when the data reliability level of the flash memory is lower than the threshold.

Abstract: A storage device includes a flash memory and a memory controller. The flash memory includes a plurality of memory blocks. The memory controller is configured to determine a fast cycle weight corresponding to a reuse period of a selected memory block among the plurality of memory blocks, and to manage wear leveling of the selected memory block using the fast cycle weight.

Abstract: A storage device is provided which includes a nonvolatile memory device configured to store a plurality of reference data, a memory configured to store a hash manage table used to manage a plurality of reference hash keys of each of the plurality of reference data, a hash key generator configured to generate a plurality of hash keys based on write requested data, and a memory controller configured to compare the plurality of hash keys and reference hash keys of each reference data to determine whether to store the write requested data in the nonvolatile memory device. The memory controller selects one of the plurality of reference data according to a similarity between the plurality of hash keys and the plurality of reference hash keys of each reference data and stores the write requested data and the selected reference data in the nonvolatile memory device to refer to each other.

Abstract: A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.

Abstract: A storage device includes a nonvolatile memory having a plurality of memory cells and a memory controller to control the nonvolatile memory. The operating method of the storage device includes reading previously programmed memory cells among the memory cells of the nonvolatile memory and determining a time after erase of the previously programmed memory cells, programming selected memory cells of the nonvolatile memory, and programming meta data including a time after erase of the selected memory cells, based on the determined time after erase of the previously programmed memory cells.

Abstract: A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.

Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller managing the nonvolatile memory device. The operation method includes receiving a read command and a read address from an external device, reading read data stored in memory cells connected to a selected word line of a selected memory block corresponding to the read address in response to the read command, and detecting and correcting error bits of the read data. The method includes estimating the number of error bits of unselected word lines on the basis of erase leaving times of memory cells connected to the unselected word lines of the selected memory block and the detected error bits, and performing read-reclaim operation on at least one word line among the selected word line and the unselected word lines on the basis of the estimated number of error bits.

Abstract: A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.

Abstract: A storage device includes a nonvolatile memory having a plurality of memory cells and a memory controller to control the nonvolatile memory. The operating method of the storage device includes reading previously programmed memory cells among the memory cells of the nonvolatile memory and determining a time after erase of the previously programmed memory cells, programming selected memory cells of the nonvolatile memory, and programming meta data including a time after erase of the selected memory cells, based on the determined time after erase of the previously programmed memory cells.

Abstract: An operation method of a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory, includes transmitting a multi-program command to the nonvolatile memory by the memory controller; and programming memory cells connected to two or more word lines by the nonvolatile memory in response to the multi-program command.

Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

Abstract: A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.

Abstract: An operation method of a storage device includes receiving quality of service (QoS) information of a plurality of virtual channels and storing the QoS information. A nonvolatile memory is accessed using different schemes according to the stored QoS information and commands received by virtual channels. The virtual channels are channels through which the storage device communicates with an external device.