Abstract: A tailgate opening/closing device has a simplified tailgate opening/closing structure, reduced manufacturing cost, reduced weight, and improved quality. The device includes a release gear configured to be rotated forwards and backwards by a rotational force from a motor, a cinching gear engaged with the release gear, a linkage mechanism configured to receive force from the cinching gear to rotate toward a claw, the claw being caught by the linkage mechanism to rotate together therewith so as to be engaged with a striker, and a pawl unit configured to be caught by the claw in the state in which the claw is engaged with the striker so as to restrict rotation of the claw and configured to allow rotation of the claw in a release operation direction only when the release gear rotates in the release operation direction.

Abstract: A tailgate opening/closing device has a simplified tailgate opening/closing structure, reduced manufacturing cost, reduced weight, and improved quality. The device includes a release gear configured to be rotated forwards and backwards by a rotational force from a motor, a cinching gear engaged with the release gear, a linkage mechanism configured to receive force from the cinching gear to rotate toward a claw, the claw being caught by the linkage mechanism to rotate together therewith so as to be engaged with a striker, and a pawl unit configured to be caught by the claw in the state in which the claw is engaged with the striker so as to restrict rotation of the claw and configured to allow rotation of the claw in a release operation direction only when the release gear rotates in the release operation direction.

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.

Abstract: A plasma processing apparatus includes a process chamber providing a space for plasma processing, a lower electrode that is in the process chamber, a surface of the lower electrode being for mounting a wafer thereon, an upper electrode that is in the process chamber and faces the lower electrode, a gas supplier configured to supply process gas between the upper electrode and the lower electrode, a focus ring arranged on the lower electrode to surround an edge of the wafer mounted on the lower electrode, an edge ring arranged below the focus ring and including first bodies that are separate from each other with a space therebetween, a plurality of heaters installed in the first bodies, and a heater controller configured to separately control driving of each of the heaters.

Abstract: A rechargeable battery includes an electrode assembly, a case, a cap assembly, and a current collecting plate. The electrode assembly includes an anode, a cathode, and a separator interposed between the anode and the cathode. The case houses the electrode assembly and has an opening and has a closed end. The cap assembly is coupled to the opening of the case, and is electrically connected to the electrode assembly. The current collecting plate is electrically connected to the anode or the cathode, and has a guide portion. The guide portion bends toward the electrode assembly to be in contact with the electrode assembly.

Abstract: A fuel cell system includes a fuel cell stack, a reformer which generates a reformed gas through a reforming reaction between a gaseous fuel and water and supplies the reformed gas to the fuel cell stack, a fuel tank which compresses the gaseous fuel, stores the compressed fuel in an at least a partially liquid phase, and supplies the gaseous fuel to the reformer, a water tank connected to the fuel tank and the reformer to store water and to supply the water to the reformer by an internal air pressure of the fuel tank, and a first valve installed in a connection line connecting the water tank to the fuel tank to selectively open or close the connection line according to an electrical on/off pulse signal.

Abstract: Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.

Abstract: A rechargeable battery includes an electrode assembly, a case, a cap assembly, and a current collecting plate. The electrode assembly includes an anode, a cathode, and a separator interposed between the anode and the cathode. The case houses the electrode assembly and has an opening and has a closed end. The cap assembly is coupled to the opening of the case, and is electrically connected to the electrode assembly. The current collecting plate is electrically connected to the anode or the cathode, and has a guide portion. The guide portion bends toward the electrode assembly to be in contact with the electrode assembly.

Abstract: Disclosed is a plasma processing apparatus and a method thereof. A plasma processing apparatus includes a chamber for processing a semiconductor substrate by generating plasma, upper and lower electrodes installed in the chamber, a high frequency power supply for supplying high frequency power to the upper and lower electrodes, and a phase controller adjusting a phase difference of the high frequency power supplied to the upper and lower electrodes.

Abstract: The plasma etching apparatus effectively removes an outgrowth caused by the etching in the chamber after performing a fabrication process, and a chamber cleaning method using the plasma etching apparatus. The plasma etching apparatus includes: a chamber in which an etching process of a substrate is conducted using a plasma; upper and lower electrodes arranged in the chamber; a RF power-supply unit which simultaneously applies a RF power to the upper and lower electrodes; and a controller which adjusts a power ratio of the RF power simultaneously applied to the upper and lower electrodes, and controls a plasma distribution for cleaning an inner part of the chamber. As a result, the plasma is evenly formed in the chamber, so that a cleaning efficiency can be maximized.

Abstract: Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.

Abstract: A fuel cell stack includes a body that includes electrical generators and a device that is electrically connected to the electrical generators to measure an electrical output from the electrical generators. The device includes a base substrate that is fixed to the body and terminal members that are formed on the base substrate and electrically connected to the electrical generators.

Abstract: A fuel cell system includes a fuel cell stack, a reformer which generates a reformed gas through a reforming reaction between a gaseous fuel and water and supplies the reformed gas to the fuel cell stack, a fuel tank which compresses the gaseous fuel, stores the compressed fuel in an at least a partially liquid phase, and supplies the gaseous fuel to the reformer, a water tank connected to the fuel tank and the reformer to store water and to supply the water to the reformer by an internal air pressure of the fuel tank, and a first valve installed in a connection line connecting the water tank to the fuel tank to selectively open or close the connection line according to an electrical on/off pulse signal.