Abstract: A power device includes a first transistor circuit configured to operate in response to a first control signal, a control circuit configured to generate a second control signal in response to the first control signal, and a second transistor circuit configured to operate in response to the second control signal. The second transistor circuit has an active area that is larger than an active area of the first transistor circuit.

Abstract: A power semiconductor device includes a source region in an active area, a gate structure in a peripheral area, and a plurality of trench diodes connected in series between the source region and the gate structure. Each of the plurality of trench diodes includes a first trench provided in a substrate material, an insulating layer provided over surfaces of the first trench, a first semiconductor material of a first conductivity type provided within the first trench, and a second semiconductor material of a second conductivity type provided within the first trench and disposed over the first semiconductor material in the first trench.

Abstract: A method for forming a trench diode for a power semiconductor device includes forming a first trench having a first opening and a second trench having a second opening in a substrate material, the second opening of the second trench being wider than the first opening of the first trench. An insulating layer is formed over surfaces of the first and second trenches. A first semiconductor material is provided within the first and second trenches, the first semiconductor material filling the first trench at least until the first opening is entirely plugged and partially filling the second trench so that a portion of the second opening remains open, the first semiconductor material having a first conductivity type. A second semiconductor material is provided within the second trench and over the first semiconductor material, the second semiconductor material having a second conductivity type that is different from the first conductivity type.

Abstract: A power device includes a first transistor circuit configured to operate in response to a first control signal, a control circuit configured to generate a second control signal in response to the first control signal, and a second transistor circuit configured to operate in response to the second control signal. The second transistor circuit has an active area that is larger than an active area of the first transistor circuit.

Abstract: A method for forming a trench diode for a power semiconductor device includes forming a first trench having a first opening and a second trench having a second opening in a substrate material, the second opening of the second trench being wider than the first opening of the first trench. An insulating layer is formed over surfaces of the first and second trenches. A first semiconductor material is provided within the first and second trenches, the first semiconductor material filling the first trench at least until the first opening is entirely plugged and partially filling the second trench so that a portion of the second opening remains open, the first semiconductor material having a first conductivity type. A second semiconductor material is provided within the second trench and over the first semiconductor material, the second semiconductor material having a second conductivity type that is different from the first conductivity type.

Abstract: A method for forming a trench diode for a power semiconductor device includes forming a first trench having a first opening and a second trench having a second opening in a substrate material, the second opening of the second trench being wider than the first opening of the first trench. An insulating layer is formed over surfaces of the first and second trenches. A first semiconductor material is provided within the first and second trenches, the first semiconductor material filling the first trench at least until the first opening is entirely plugged and partially filling the second trench so that a portion of the second opening remains open, the first semiconductor material having a first conductivity type. A second semiconductor material is provided within the second trench and over the first semiconductor material, the second semiconductor material having a second conductivity type that is different from the first conductivity type.

Abstract: A transistor includes a trench defined in a semiconductor substrate. A gate electrode is disposed in the trench and insulated from a sidewall of the trench by a gate dielectric. A shield electrode is disposed in the trench below the gate electrode and insulated from the gate electrode and the sidewall of the trench by a shield dielectric. The shield dielectric includes solid dielectric portions and a cavity disposed between the shield electrode and the sidewall of the trench.