Abstract: An operating method of a computational storage device includes: setting a first computing namespace, including a first queue and a first accelerator and having a first value as its first ID, per instructions from a first host; setting a second computing namespace, including a second queue and a second accelerator and having a second value as its first ID, per instructions from a second host; loading a first program from the first host in the first computing namespace; loading a second program from the second host in the second computing namespace; setting a second ID of the first computing namespace to a third value based on an ID of the first program per instructions to activate the first program; and setting the second ID of the second computing namespace to a fourth value based on an ID of the second program per instructions to activate the second program.

Abstract: A lithium metal is physically pressed to a silicon wafer having a uniform intaglio or embossed pattern formed thereon in advance, or liquid lithium is applied to the silicon wafer and may then be cooled in order to form a uniform pattern on the surface of the lithium metal.

Abstract: A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.

Abstract: A light emitting device includes a substrate including a roughened surface; a light emitter disposed on the substrate, which includes a first conductivity layer; and a mesa disposed on a partial region of the first conductivity layer. An ohmic electrode can be disposed on the mesa; and a contact electrode can be disposed on the first conductivity layer. The light emitting device further includes a first reflection layer; a first pad electrode and a second pad electrode; and a second reflection layer. The first insulating reflection layer covers at least a portion of the light emitter emitting structure, the ohmic electrode and the contact electrode. The second reflection layer is disposed on an opposite side of the substrate.

Abstract: A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode according to an embodiment includes a reflection metal layer covering a region between light emitting cells, in which the reflection metal layer is disposed between connectors electrically connecting adjacent light emitting cells, and electrically insulated from a bump pad.

Abstract: A light emitting device includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers at least a portion of the light emitting structure, the transparent electrode and the contact electrode. The second insulating reflection layer is disposed on an opposite end of the substrate. The first and/or second insulating reflection layer have at least two regions which have different reflectivity properties.

Abstract: A light emitting diode is provided to include a substrate; a light emitting structure disposed on the substrate, and including first and second semiconductor layers; a transparent electrode in ohmic contact with the second semiconductor layer; a contact electrode disposed on the first semiconductor layer; a current spreader disposed on the transparent electrode; a first insulation reflection layer covering the substrate, the light emitting structure, the transparent electrode, the contact electrode, and the current spreader, having openings exposing portions of the contact electrode and the current spreader, and including a distributed Bragg reflector; first and second pad electrodes disposed on the first insulation reflection layer and connected to the contact electrode and the current spreader through the openings; and a second insulation reflection layer disposed under the substrate and including a distributed Bragg reflector.

Abstract: A positive electrode active material precursor for a secondary battery is in the form of a secondary particle in which a plurality of primary particles are aggregated, wherein major axes of the primary particles are arranged in a direction from a center of the secondary particle toward a surface thereof, wherein the primary particle includes crystallines in which a (001) plane is arranged in a direction having an angle of 20° to 160° with respect to a major axis direction of the primary particle. A method of preparing the positive electrode active material precursor is also provided.

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

Abstract: The present invention provides a file synchronization and centralization system and a file synchronization and centralization method, which forcibly transmit, to a central server, data corresponding to a synchronization condition, among data being operated or data having been operated, and deletes the transmitted data from a PC, thereby making it impossible to transfer the data (including files and documents) to the outside or completely blocking a route through which the data can be attacked by ransom ware. The file synchronization and centralization system includes a central server and a PC.

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.

Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.

Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).

Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25?+10%, a second group having an optical thickness in a range of 0.25??10% to 0.25?+10%, and a third group having an optical thickness less than 0.25??10%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25? and greater than 0.25?, the second material layers have a smaller average optical thickness than the first group of the first material layers.

Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25?+10%, in a range of 0.25??10% to 0.25?+10%, and less than 0.25??10%, respectively. With respect to a central wavelength (?: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

Abstract: The present disclosure relates to a precursor of a positive electrode active material for a secondary battery including a single layer-structured secondary particle in which pillar-shaped primary particles radially oriented in a surface direction from the particle center are aggregated, wherein the secondary particle has a shell shape, and the primary particle includes a composite metal hydroxide of Ni—Co—Mn of the following Chemical Formula 1, and a positive electrode active material prepared using the same: Ni1?(x+y+z)CoxMyMnz(OH)2??[Chemical Formula 1] In Chemical Formula 1, M, x, y and z have the same definitions as in the specification.

Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

Abstract: The present invention provides a file synchronization and centralization system and a file synchronization and centralization method, which forcibly transmit, to a central server, data corresponding to a synchronization condition, among data being operated or data having been operated, and deletes the transmitted data from a PC, thereby making it impossible to transfer the data (including files and documents) to the outside or completely blocking a route through which the data can be attacked by ransom ware. The file synchronization and centralization system includes a central server and a PC.