Abstract: A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.

Abstract: A mask for thin film deposition includes a first mask which defines an opening, and a second mask on a surface of the first mask, and which defines a plurality of deposition holes and has a multilayer structure, in which the opening and the plurality of deposition holes communicate with each other and provide a passage for a deposition material, a size of each of the plurality of deposition holes is smaller than a size of the opening, and each of the plurality of deposition holes has a shape corresponding to a deposition pattern to be patterned on a substrate.

Abstract: A display apparatus includes a backlight assembly which generates a light and a display panel which receives the light to display an image, the display panel including a first substrate, a second substrate which faces the first substrate and is disposed closer to the backlight assembly than the first substrate, a gate line disposed on the first substrate, a data line disposed on the gate line and insulated from the gate line, a thin film transistor disposed on the first substrate and electrically connected to the gate line and the data line, and a reflection preventing layer disposed between the first substrate and the gate line to reduce an amount of a reflected light reflected by the gate line.

Abstract: Provided is a method for fabricating an array substrate. The method for fabricating the array substrate includes forming a semiconductor layer on a substrate, forming a gate electrode which is insulated from the semiconductor layer, forming source and drain electrodes which are insulated from the gate electrode and connected to the semiconductor layer, and forming a pixel electrode connected to the drain electrode. Here, at least one of the forming of the gate electrode, the forming of the source and drain electrodes, and the forming of the pixel electrode includes forming a conductive layer on the substrate, cooling the substrate on which the conductive layer is formed to a temperature of no greater than about 0° C., heating the cooled substrate, and patterning the conductive layer.

Abstract: A display apparatus includes a backlight assembly which generates a light and a display panel which receives the light to display an image, the display panel including a first substrate, a second substrate which faces the first substrate and is disposed closer to the backlight assembly than the first substrate, a gate line disposed on the first substrate, a data line disposed on the gate line and insulated from the gate line, a thin film transistor disposed on the first substrate and electrically connected to the gate line and the data line, and a reflection preventing layer disposed between the first substrate and the gate line to reduce an amount of a reflected light reflected by the gate line.

Abstract: Provided is a method for fabricating an array substrate. The method for fabricating the array substrate includes forming a semiconductor layer on a substrate, forming a gate electrode which is insulated from the semiconductor layer, forming source and drain electrodes which are insulated from the gate electrode and connected to the semiconductor layer, and forming a pixel electrode connected to the drain electrode. Here, at least one of the forming of the gate electrode, the forming of the source and drain electrodes, and the forming of the pixel electrode includes forming a conductive layer on the substrate, cooling the substrate on which the conductive layer is formed to a temperature of no greater than about 0° C., heating the cooled substrate, and patterning the conductive layer.