Abstract: A liquid crystal display device including a liquid crystal panel including a first substrate, a thin film transistor on the first substrate, an organic buffer layer between the first substrate and the thin film transistor, a second substrate, a color filter layer on the second substrate, and a liquid crystal layer between the first and second substrates, and a backlight unit below the liquid crystal panel. The second substrate is between the backlight unit and the first substrate.

Abstract: A liquid crystal display device including a liquid crystal panel including a first substrate, a thin film transistor on the first substrate, an organic buffer layer between the first substrate and the thin film transistor, a second substrate, a color filter layer on the second substrate, and a liquid crystal layer between the first and second substrates, and a backlight unit below the liquid crystal panel. The second substrate is between the backlight unit and the first substrate.

Abstract: A liquid crystal display device including a liquid crystal panel including a first substrate, a thin film transistor on the first substrate, an organic buffer layer between the first substrate and the thin film transistor, a second substrate, a color filter layer on the second substrate, and a liquid crystal layer between the first and second substrates, and a backlight unit below the liquid crystal panel. The second substrate is between the backlight unit and the first substrate.

Abstract: Disclosed is an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a transistor structure having at least five thin film transistors (TFTs), said transistor structure configured in view of changes in operating characteristics that depend on a channel length of a back channel etched (BCE) type oxide transistor.

Abstract: A foldable display device is disclosed. In one aspect, the foldable display includes a display substrate, a data driver detachably connected to the display substrate, and a controller unit configured to control the data driver and detachably connected to the data driver. The display substrate includes a substrate body, a display element disposed on a first surface of the substrate body, and a transparency adjusting layer configured to adjust transparency of the display substrate and disposed on a second surface of the substrate body, wherein the first and second surfaces are opposing each other.

Abstract: A foldable display device is disclosed. In one aspect, the foldable display includes a display substrate, a data driver detachably connected to the display substrate, and a controller unit configured to control the data driver and detachably connected to the data driver. The display substrate includes a substrate body, a display element disposed on a first surface of the substrate body, and a transparency adjusting layer configured to adjust transparency of the display substrate and disposed on a second surface of the substrate body, wherein the first and second surfaces are opposing each other.

Abstract: A foldable display device is disclosed. In one aspect, the foldable display includes a display substrate, a data driver detachably connected to the display substrate, and a controller unit configured to control the data driver and detachably connected to the data driver. The display substrate includes a substrate body, a display element disposed on a first surface of the substrate body, and a transparency adjusting layer configured to adjust transparency of the display substrate and disposed on a second surface of the substrate body, wherein the first and second surfaces are opposing each other.

Abstract: A foldable display device is disclosed. In one aspect, the foldable display includes a display substrate, a data driver detachably connected to the display substrate, and a controller unit configured to control the data driver and detachably connected to the data driver. The display substrate includes a substrate body, a display element disposed on a first surface of the substrate body, and a transparency adjusting layer configured to adjust transparency of the display substrate and disposed on a second surface of the substrate body, wherein the first and second surfaces are opposing each other.

Abstract: Disclosed is an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a transistor structure having at least five thin film transistors (TFTs), said transistor structure configured in view of changes in operating characteristics that depend on a channel length of a back channel etched (BCE) type oxide transistor.

Abstract: Disclosed is a direction controllable electrode body, comprising a flexible body which comprises: a first electrode, comprising a body, a first cap joined to one end of the body, and a first electrode line connected to an other end of the body; an insulator in partial contact with the body and the first cap of the first electrode, said insulator functioning to insulate the first electrode from the second electrode; a second electrode, comprising a first ring in contact with the insulator, and a second electrode line connected to one end of the first ring; and a direction controller, comprising a first direction controlling wire communicating with the first electrode or the second electrode to control direction of the electrode body. Also, a guide pipe is provided for leading the electrode body to a target tissue.

Abstract: A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmosphere of ammonia (NH3) gas to remove impurities from the silicon nitride layer. The silicon nitride layer may be formed using BTBAS as a silicon precursor.

Abstract: A method of fabricating a semiconductor device having a silicon nitride layer substantially free of impurities includes forming a silicon nitride layer on a semiconductor substrate and annealing the semiconductor substrate having the silicon nitride layer in an atmosphere of ammonia (NH3) gas to remove impurities from the silicon nitride layer. The silicon nitride layer may be formed using BTBAS as a silicon precursor.

Abstract: A process for forming oxide layer on a wafer, which comprises a wet oxidation step using a pyrogenic steam as an oxidizing agent. The present invention comprises a flowing of an inert gas throughout the process including the wet oxidation step. The process allows an easy control of the oxide layer growth rate and oxide layer thickness, a formation of a more uniform oxide layer, and an improvement in the quality of the oxide layer.

Abstract: A control system of a semiconductor device manufacturing process is disclosed. The system includes a main host computer, host computers connected to the main host computer and process performing apparatuses connected to the host computers. The system checks the integrity of transferred operational instructions between the host computers and process performing apparatuses, in order to prevent errors in the manufacturing process. When the error is detected the system user is notified by audio signals or visual displays.

Abstract: A vertical diffusion furnace and a cap therefor are provided to minimize diffusion non-uniformity in a diffusion furnace caused by the positioning of a reaction gas outlet. In the vertical diffusion furnace, a reaction gas outlet is formed in the lower portion of a cap and adapted to extend downward through a flange. Thus, is provided a means to maintain diffusion uniformity in the diffusion furnace to comply with the necessity of processing large diameter wafers needed for highly integrated semiconductor devices. Thereby, a decrease in the rate of productivity for operating such equipment due to its positioning of a reaction gas outlet is prevented.

Abstract: A leakage gas detector for a semiconductor device includes a plurality of inflow apertures into which leakage gas flows. A detector sequentially detects the leakage gas in each of the inflow apertures via a plurality of valves, so as to leak test each of the plurality of inflow apertures for presence of possible leakage gas. Each of the plurality of valves are connected to corresponding of the plurality of inflow apertures to control the suction of the leakage gas into the detector. A controller selectively opens and closes each of the plurality of valves.

Abstract: A boat for a vertical diffusion furnace has an upper disk and a lower disk spaced parallel from each other by a predetermined distance. A pair of first bars, having a plurality of wafer holding slots, face each other along a first center plane extending along a diameter of the upper and lower disks, and connect the upper and lower disks. A pair of second bars also connect the upper and lower disks, and are positioned at a predetermined angle with respect to a second center plane orthogonal to the first center plane. The second bars have a plurality of slots corresponding to the slots of the first bars. A pair of first auxiliary bars are installed adjacent to the pair of first bars to also connect the upper and lower disks. The boat may further have a pair of second auxiliary bars for connecting the upper and lower disks at positions adjacent to the pair of second bars. Also, a pair of horizontal supporting bars connect the first auxiliary bars to the second auxiliary bars.