Abstract: Photoactive materials made from Group IV semiconductor nanoparticles dispersed in an inorganic oxide matrix and methods for making the photoactive materials are provided. In some instances, the nanoparticles are functionalized with organosilanes to provide nanoparticle-organosilane compounds. The photoactive materials may be formed by subjecting the nanoparticles or nanoparticle compounds to a sol-gel process. The photoactive materials are well-suited for use in devices which convert electromagnetic radiation into electrical energy, including photovoltaic devices, photoconductors, and photodetectors.

Abstract: The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.

Abstract: The present invention relates to a novel, unconventional methods and systems for the fabrication of silicon on silicon-germanium photovoltaic cell applications. In some embodiments high purity gaseous and/or liquid intermediate compounds of silicon (or silicon germanium) are converted directly to polycrystalline films by a thermal plasma chemical vapor deposition process or by a thermal plasma spraying technique. The intermediate compounds of silicon (or silicon germanium) are injected into the thermal plasma source where temperatures range from 2,000 K to 20,000 K. The compounds dissociate and silicon (or silicon germanium) is deposited onto substrates. Polycrystalline films having densities approaching the bulk value are obtained on cooling. PN junction photovoltaic cells can be directly prepared by spraying, or doped films after heat treatment are subsequently transformed to viable photovoltaic cells having high efficiency, low cost at a high throughput.

Abstract: The present invention provides photoactive materials that include inorganic nanostructures comprising a Group IV semiconductor in combination with electron-transporting, conjugated small molecules, carbon nanostructures, or both. The carbon nanostructures or conjugated small molecules may be selected such that the inorganic nanostructures and the carbon nanostructures (and/or the small molecules) exhibit a type II band offset. The photovoltaic materials are well-suited for use as the active layer in photoactive devices, including photovoltaic devices, photoconductors, and photodetectors.

Abstract: The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.

Abstract: The present invention relates to a novel, unconventional methods and systems for the fabrication of silicon or silicon-germanium photovoltaic cell applications. In some embodiments high purity gaseous and/or liquid intermediate compounds of silicon (or silicon germanium) are converted directly to polycrystalline films by a thermal plasma chemical vapor deposition process or by a thermal plasma spraying technique. The intermediate compounds of silicon (or silicon germanium) are injected into the thermal plasma source where temperatures range from 2000 K to about 20,000 K. The compounds dissociate and silicon (or silicon germanium) is deposited onto substrates. Polycrystalline films having densities approaching the bulk value are obtained on cooling. PN junction photovoltaic cells can be directly prepared by spraying, or doped films after heat treatment are subsequently transformed to viable photovoltaic cells having high efficiency, low cost at a high throughput.

Abstract: Photoactive materials made from Group IV semiconductor nanoparticles dispersed in an inorganic oxide matrix and methods for making the photoactive materials are provided. In some instances, the nanoparticles are functionalized with organosilanes to provide nanoparticle-organosilane compounds. The photoactive materials may be formed by subjecting the nanoparticles or nanoparticle compounds to a sol-gel process. The photoactive materials are well-suited for use in devices which convert electromagnetic radiation into electrical energy, including photovoltaic devices, photoconductors, and photodetectors.