Abstract: The present invention is generally drawn to a system and method for creating RF integrated microwave circuits that can support multiple applications where many RF functions can be derived from a generic integrated circuit after the RF integrated microwave circuit is manufactured. More specifically, the present invention can provide active and passive device building blocks of respective monolithic microwave integrated circuit (MMIC) arrays and substrates that can be coupled together in various ways after manufacture of the integrated circuits to achieve multiple applications. This can accomplished by manufacturing chips with multiple active device blocks that can support various and multiple applications and that can be coupled together in various ways, adjusted, or tuned after manufacture.

Abstract: The present invention is generally drawn to a system and method for creating RF integrated microwave circuits that can support multiple applications where many RF functions can be derived from a generic integrated circuit after the RF integrated microwave circuit is manufactured. More specifically, the present invention can provide active and passive device building blocks of respective monolithic microwave integrated circuit (MMIC) arrays and substrates that can be coupled together in various ways after manufacture of the integrated circuits to achieve multiple applications. This can accomplished by manufacturing chips with multiple active device blocks that can support various and multiple applications and that can be coupled together in various ways, adjusted, or tuned after manufacture.

Abstract: A footprint for adaptable MMIC arrays is disclosed in which the size, number and location of the array components is optimized for the fabrication by depositing a personalizing metal interconnecting layer on the array, of essentially any MMIC circuit from a single footprint layout.

Abstract: A footprint for adaptable MMIC arrays is disclosed in which the size, number and location of the array components is optimized for the fabrication by depositing a personalizing metal interconnecting layer on the array, of essentially any MMIC circuit from a single footprint layout.

Abstract: A feedback circuit couples a base amplifier output to the amplifier input for feeding back a portion of an amplified input signal. The feedback circuit includes an inductor coupled in series with a variable resistance. The variable feedback resistance is provided by a feedback FET having a gate for receiving a control signal for varying the resistance between the source and drain. The gain of the base amplifier is determined over the predetermined frequency range by the combined impedance of the inductor and resistance. The base amplifier is a field-effect transistor (FET). The feedback inductance is taken from a portion of a coil coupling the drain of the base FET with an output terminal.

Abstract: A switch matrix for particular use in microwave monolithic integrated circuits has FET-based switch elements with at least a combined total of two gates. Embodiments include the use of single and dual gate FETs. A preferred embodiment includes cascode-coupled FETs in series with inductances between input and output terminals. The input is taken from an artificial transmission line formed of a plurality of series-coupled inductors or from the junctions of series-coupled pairs of mutually coupled inductors.

Abstract: A monolithic microwave integrated circuit (MMIC) phase shifter is implemented in push-pull configuration with the quadrant selection and vector modulation functions combined. These functions are provided by four sets of adjustable gate-width dual-gate FETs and a pair of lumped element filter networks with a relative differential phase shift of 90.degree..

Abstract: A push-pull monolithic active isloator having a pair of MESFETs in common-gate and common-drain (source follower), parallel configuration. These two FETs are the same size and a diode is inserted between the gate of the source follower and the source of the common-gate FET. A D.C. blocking capacitor is included at the output. Another FET is coupled between the input and ground and responsive to a control signal to vary the current in a biasing resistor between the drain and gate of the source follower.

Abstract: A customizable impedance matching network for coupling a microwave transmission line to an FET. The network includes a plurality of conductive pads formed on the first surface of a dielectric substrate each pad providing in combination with the substrate and a conductor formed on an opposite surface of the substrate, a predetermined capacitance. Selective ones of such conductive pads are interconnected in parallel to form a capacitor having a capacitance related to the total surface area of such interconnected conductive pads, to provide the requisite capacitive reactance for the network. The network further includes a strip conductor formed on such first surface having a predetermined inductance per unit length and having a first end electrically connected to the network.