Patents by Inventor Sanjay D. Yadav

Sanjay D. Yadav has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967516
    Abstract: Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: April 23, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Jrjyan Jerry Chen, Sanjay D. Yadav, Tae Kyung Won, Jun Li, Shouqian Shao, Surendra Kanimihally Setty
  • Publication number: 20240105427
    Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.
    Type: Application
    Filed: December 4, 2023
    Publication date: March 28, 2024
    Inventors: Chien-Teh KAO, Tae Kyung WON, Carl A. SORENSEN, Sanjay D. YADAV, Young Dong LEE, Shinichi KURITA, Soo Young CHOI
  • Publication number: 20240047291
    Abstract: Embodiments of the present disclosure generally relate to moisture barrier films utilized in an organic light emitting diode device. A moisture barrier film is deposited in a high density plasma chemical vapor deposition chamber at a temperature of less than about 250 degrees Celsius, an inductively coupled plasma power frequency of about 2 MHz to about 13.56 MHz or a microwave power frequency of about 2.45 GHz, and a plasma density of about 1011 cm3 to about 1012 cm3. The moisture barrier film comprises a material selected from the group consisting of silicon oxynitride, silicon nitride, and silicon oxide. The moisture barrier film has a thickness of less than about 3,000 Angstroms, a refractive index between about 1.45 and 1.95, and an absorption coefficient of about zero at UV wavelengths. The moisture barrier film may be utilized in a thin film encapsulation structure or a thin film transistor.
    Type: Application
    Filed: September 10, 2019
    Publication date: February 8, 2024
    Inventors: Tae Kyung WON, Soo Young CHOI, Dong Kil YIM, Young Dong LEE, Zongkai WU, Sanjay D. YADAV
  • Patent number: 11854771
    Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: December 26, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Chien-Teh Kao, Tae Kyung Won, Carl A. Sorensen, Sanjay D. Yadav, Young Dong Lee, Shinichi Kurita, Soo Young Choi
  • Patent number: 11770964
    Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm?3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm?3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.
    Type: Grant
    Filed: March 25, 2021
    Date of Patent: September 26, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Tae Kyung Won, Soo Young Choi, Sanjay D. Yadav
  • Publication number: 20220122876
    Abstract: Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.
    Type: Application
    Filed: January 17, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jrjyan Jerry CHEN, Sanjay D. YADAV, Tae Kyung WON, Jun LI, Shouqian SHAO, Surendra Kanimihally SETTY
  • Publication number: 20210292894
    Abstract: Embodiments described herein generally relate to a substrate processing chamber, and more specifically to an apparatus and method for monitoring a cleaning processing for the substrate processing chamber. A processor receives one or more temperature readings from one or more sensors disposed in a substrate processing chamber. The processor determines a peak for each temperature reading from the one or more temperature readings, which indicate an end of exothermic film clean reaction. Upon determining that each temperature reading has peaked, the process issues a notification to cease the cleaning process.
    Type: Application
    Filed: August 18, 2017
    Publication date: September 23, 2021
    Applicants: Applied Materials, Inc., Applied Materials, Inc.
    Inventors: Fei PENG, Beom Soo PARK, Soo Young CHOI, Sanjay D. YADAV, Young-Jin CHOI, Himanshu JOSHI
  • Publication number: 20210280392
    Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.
    Type: Application
    Filed: May 24, 2021
    Publication date: September 9, 2021
    Inventors: Chien-Teh KAO, Tae Kyung WON, Carl A. SORENSEN, Sanjay D. YADAV, Young Dong LEE, Shinichi KURITA, Soo Young CHOI
  • Patent number: 11094508
    Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: August 17, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Chien-Teh Kao, Tae Kyung Won, Carl A. Sorensen, Sanjay D. Yadav, Young Dong Lee, Shinichi Kurita, Soo Young Choi
  • Publication number: 20210210737
    Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm?3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm?3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.
    Type: Application
    Filed: March 25, 2021
    Publication date: July 8, 2021
    Inventors: Tae Kyung WON, Soo Young CHOI, Sanjay D. YADAV
  • Patent number: 11053592
    Abstract: Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a lift pin. The lift pin has a body. The body has an interior passage and a rounded top surface configured for contacting a substrate when in use. A substrate temperature sensor disposed in the interior passage.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: July 6, 2021
    Assignee: Applied Materials, Inc.
    Inventor: Sanjay D. Yadav
  • Patent number: 10991916
    Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm?3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm?3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: April 27, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tae Kyung Won, Soo Young Choi, Sanjay D. Yadav
  • Patent number: 10751765
    Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: August 25, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tae Kyung Won, Young Dong Lee, Chien-Teh Kao, Soo Young Choi, Sanjay D. Yadav
  • Patent number: 10697063
    Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: June 30, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Lai Zhao, Gaku Furuta, Qunhua Wang, Robin L. Tiner, Beom Soo Park, Soo Young Choi, Sanjay D. Yadav
  • Publication number: 20200194233
    Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.
    Type: Application
    Filed: December 14, 2018
    Publication date: June 18, 2020
    Inventors: Chien-Teh KAO, Tae Kyung WON, Carl A. SORENSEN, Sanjay D. YADAV, Young Dong LEE, Shinichi KURITA, Soo Young CHOI
  • Publication number: 20200047222
    Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.
    Type: Application
    Filed: August 13, 2018
    Publication date: February 13, 2020
    Inventors: Tae Kyung WON, Young Dong LEE, Chien-Teh KAO, Soo Young CHOI, Sanjay D. YADAV
  • Patent number: 10312475
    Abstract: Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: June 4, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tae Kyung Won, Soo Young Choi, Sanjay D. Yadav, Carl A. Sorensen, Chien-Teh Kao, Suhail Anwar, Young Dong Lee
  • Publication number: 20190153603
    Abstract: Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a lift pin. The lift pin has a body. The body has an interior passage and a rounded top surface configured for contacting a substrate when in use. A substrate temperature sensor disposed in the interior passage.
    Type: Application
    Filed: January 22, 2019
    Publication date: May 23, 2019
    Inventor: Sanjay D. YADAV
  • Publication number: 20190036085
    Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm?3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm?3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.
    Type: Application
    Filed: July 23, 2018
    Publication date: January 31, 2019
    Inventors: Tae Kyung WON, Soo Young CHOI, Sanjay D. YADAV
  • Publication number: 20180340257
    Abstract: Embodiments described herein relate to a plasma enhanced chemical vapor deposition (PECVD) chamber and diffuser assembly for processing large area flat panel display substrates. The diffuser includes a first plate having a plurality of first bores formed therein, a second plate having a second plurality of bores formed therein, and a third plate having a third plurality of bores formed therein. The second plate is disposed between the first plate and the second plate. The first plate, second plate, and third plate are brazed to form a diffuser having a unitary body.
    Type: Application
    Filed: July 7, 2017
    Publication date: November 29, 2018
    Inventors: Umesha ACHARY, Sanjay D. YADAV, Lai ZHAO, Gaku FURUTA, Ko-Ta SHIH, Soo Young CHOI