Abstract: Disclosed are methods of fabrication and related piezoelectric devices comprising a piezoelectric layer with an induced compressive strain along a z-axis. The methods include formation of a stress layer on a bottom side of a wafer substrate, after deposition of the piezoelectric layer. Stress layer removal results in an induced compressive strain along the z-axis which increases the electromechanical coupling coefficient, and thereby piezoelectric performance. Related devices are also disclosed, including bulk acoustic wave (BAW) thin film resonators (FBAR), which are fabricated in accordance with the disclosed methods.