Patents by Inventor Sanjay Kamath

Sanjay Kamath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10410869
    Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: September 10, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Susmit Singha Roy, Kelvin Chan, Hien Minh Le, Sanjay Kamath, Abhijit Basu Mallick, Srinivas Gandikota, Karthik Janakiraman
  • Publication number: 20190211089
    Abstract: Activatable binding polypeptides (ABPs), which contain a target binding moiety (TBM), a masking moiety (MM), and a cleavable moiety (CM) are provided. Activatable antibody compositions, which contain a TBM containing an antigen binding domain (ABD), a MM and a CM are provided. Furthermore, ABPs which contain a first TBM, a second TBM and a CM are provided. The ABPs exhibit an “activatable” conformation such that at least one of the TBMs is less accessible to target when uncleaved than after cleavage of the CM in the presence of a cleaving agent capable of cleaving the CM. Further provided are libraries of candidate ABPs, methods of screening to identify such ABPs, and methods of use. Further provided are ABPs having TBMs that bind VEGF, CTLA-4, or VCAM, ABPs having a first TBM that binds VEGF and a second TBM that binds FGF, as well as compositions and methods of use.
    Type: Application
    Filed: August 13, 2018
    Publication date: July 11, 2019
    Inventors: Patrick Sean Daugherty, Nancy Stagliano, Jerry Thomas, Kathryn Kamath, James W. West, Sanjay Khare, Jason Sagert
  • Publication number: 20180350563
    Abstract: Embodiments of the disclosure generally relate to a method of processing a semiconductor substrate at a temperature less than 250 degrees Celsius. In one embodiment, the method includes loading the substrate with the deposited film into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure greater than about 2 bars, and maintaining the pressure vessel at a temperature between a condensation point of the processing gas and about 250 degrees Celsius.
    Type: Application
    Filed: May 29, 2018
    Publication date: December 6, 2018
    Inventors: Pramit MANNA, Abhijit Basu MALLICK, Kurtis LESCHKIES, Steven VERHAVERBEKE, Sanjay KAMATH, Zongbin WANG, Hanwen ZHANG, Shishi JIANG
  • Publication number: 20170372953
    Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.
    Type: Application
    Filed: June 26, 2017
    Publication date: December 28, 2017
    Inventors: Susmit Singha ROY, Kelvin CHAN, Hien Minh LE, Sanjay KAMATH, Abhijit Basu MALLICK, Srinivas GANDIKOTA, Karthik JANAKIRAMAN
  • Patent number: 9826433
    Abstract: According to a disclosed embodiment, a flow indication counter is incremented each time a data packet is transmitted from a buffer. When the number of data packets transmitted equals or exceeds a threshold number, a flow indication message comprising the buffer window size is generated and transmitted to the base station controller. Further, flow indication messages can be generated and transmitted every threshold time interval, independently of the number of data packets transmitted to ensure that flow indication messages are sent at least every preset time interval. Moreover, a system for flow control can be constructed comprising a flow indication counter module configured to provide an updated number of data packets transmitted. The system further comprises a window size monitoring module which determines the buffer window size and a message generating module which generates a flow indication message comprising the buffer window size.
    Type: Grant
    Filed: May 14, 2007
    Date of Patent: November 21, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: Sanjay Kamath, Michael A. Kongelf, Leif Woodahl
  • Patent number: 9362107
    Abstract: Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: June 7, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Kiran V. Thadani, Abhijit Basu Mallick, Sanjay Kamath
  • Publication number: 20160093488
    Abstract: Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.
    Type: Application
    Filed: September 30, 2014
    Publication date: March 31, 2016
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kiran V. Thadani, Abhijit Basu Mallick, Sanjay Kamath
  • Publication number: 20130217241
    Abstract: Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
    Type: Application
    Filed: August 21, 2012
    Publication date: August 22, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Brian S. Underwood, Linlin Wang, Sanjay Kamath, Abhijit Basu Mallick, Nitin K. Ingle
  • Patent number: 7967913
    Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: June 28, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Zhong Qiang Hua, Sanjay Kamath, Young S. Lee, Ellie Y. Yieh, Hien-Minh Huu Le, Anjana M. Patel, Sudhir R. Gondhalekar
  • Patent number: 7799704
    Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: September 21, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
  • Patent number: 7740706
    Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: June 22, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
  • Patent number: 7704897
    Abstract: The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.
    Type: Grant
    Filed: February 22, 2008
    Date of Patent: April 27, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Hemant P. Mungekar, Young S. Lee, Agnieszka Jakubowicz, Zhong Qiang Hua, Rionard Purnawan, Sanjay Kamath, Walter Zygmunt
  • Publication number: 20100095979
    Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr.
    Type: Application
    Filed: July 23, 2009
    Publication date: April 22, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Zhong Qiang Hua, Sanjay Kamath, Young S. Lee, Ellie Y. Yieh, Hien-Minh Huu Le, Anjana M. Patel, Sudhir R. Gondhalekar
  • Publication number: 20090215281
    Abstract: The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.
    Type: Application
    Filed: February 22, 2008
    Publication date: August 27, 2009
    Applicant: Applied Materials, Inc.
    Inventors: HEMANT P. MUNGEKAR, Young S. Lee, Agnieszka Jakubowicz, Zhong Qiang Hua, Rionard Purnawan, Sanjay Kamath, Walter Zygmunt
  • Publication number: 20090093129
    Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
    Type: Application
    Filed: October 17, 2008
    Publication date: April 9, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
  • Publication number: 20080121179
    Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
    Type: Application
    Filed: November 28, 2006
    Publication date: May 29, 2008
    Applicant: Applied Materials, Inc.
    Inventors: SOONAM PARK, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
  • Publication number: 20080124944
    Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
    Type: Application
    Filed: November 28, 2006
    Publication date: May 29, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
  • Publication number: 20070223383
    Abstract: According to a disclosed embodiment, a flow indication counter is incremented each time a data packet is transmitted from a buffer. When the number of data packets transmitted equals or exceeds a threshold number, a flow indication message comprising the buffer window size is generated and transmitted to the base station controller. Further, flow indication messages can be generated and transmitted every threshold time interval, independently of the number of data packets transmitted to ensure that flow indication messages are sent at least every preset time interval. Moreover, a system for flow control can be constructed comprising a flow indication counter module configured to provide an updated number of data packets transmitted. The system further comprises a window size monitoring module which determines the buffer window size and a message generating module which generates a flow indication message comprising the buffer window size.
    Type: Application
    Filed: May 14, 2007
    Publication date: September 27, 2007
    Applicant: QUALCOMM Incorporated
    Inventors: Sanjay Kamath, Michael Kongelf, Leif Woodahl
  • Patent number: 7237007
    Abstract: According to a disclosed embodiment, a flow indication counter is incremented each time a data packet is transmitted from a buffer. When the number of data packets transmitted equals or exceeds a threshold number, a flow indication message comprising the buffer window size is generated and transmitted to the base station controller. Further, flow indication messages can be generated and transmitted every threshold time interval, independently of the number of data packets transmitted to ensure that flow indication messages are sent at least every preset time interval. Moreover, a system for flow control can be constructed comprising a flow indication counter module configured to provide an updated number of data packets transmitted. The system further comprises a window size monitoring module which determines the buffer window size and a message generating module which generates a flow indication message comprising the buffer window size.
    Type: Grant
    Filed: December 5, 2001
    Date of Patent: June 26, 2007
    Assignee: Qualcomm Incorporated
    Inventors: Sanjay Kamath, Michael A. Kongelf, Leif Woodahl
  • Publication number: 20030103460
    Abstract: According to a disclosed embodiment, a flow indication counter is incremented each time a data packet is transmitted from a buffer. When the number of data packets transmitted equals or exceeds a threshold number, a flow indication message comprising the buffer window size is generated and transmitted to the base station controller. Further, flow indication messages can be generated and transmitted every threshold time interval, independently of the number of data packets transmitted to ensure that flow indication messages are sent at least every preset time interval. Moreover, a system for flow control can be constructed comprising a flow indication counter module configured to provide an updated number of data packets transmitted. The system further comprises a window size monitoring module which determines the buffer window size and a message generating module which generates a flow indication message comprising the buffer window size.
    Type: Application
    Filed: December 5, 2001
    Publication date: June 5, 2003
    Inventors: Sanjay Kamath, Michael A. Kongelf, Leif Woodahl