Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract: Apparatus, systems, and methods integrating spectral information with spatial feature extraction of image data, providing simultaneous spatial and spectral feature selection of the image data, can be used in a variety of applications. In various embodiments, an edge signature for the edge between two materials can be defined using ratios of identified spectral bands, where the edge signature can be combined with a spatial mask to obtain a joint spatio-spectral mask. Additional apparatus, systems, and methods are disclosed.

Abstract: Apparatus and methods, which comprise examination of an abnormality on a subject using a temperature stimulus applied to the subject, provide a non-invasive analysis technique. In an embodiment, a non-invasive infrared imaging technique can be used to observe the temporal response of a lesion to temperature stimuli to form a basis for evaluating the abnormality. A technique including applying temperature stimuli and detecting responses to the applied temperature stimuli provide a non-invasive technique that can be used to identify an abnormality on a subject and/or characteristics of the abnormality. In an embodiment, a non-invasive transient infrared imaging technique can be used to observe the temporal response of a lesion to temperature stimuli to form a basis for determining characteristics correlated to the lesion. Additional apparatus, systems, and methods are disclosed.

Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract: Exemplary embodiments provide an infrared (IR) retinal system and method for making and using the IR retinal system. The IR retinal system can include adaptive sensor elements, whose properties including, e.g., spectral response, signal-to-noise ratio, polarization, or amplitude can be tailored at pixel level by changing the applied bias voltage across the detector. “Color” imagery can be obtained from the IR retinal system by using a single focal plane array. The IR sensor elements can be spectrally, spatially and temporally adaptive using quantum-confined transitions in nanoscale quantum dots. The IR sensor elements can be used as building blocks of an infrared retina, similar to cones of human retina, and can be designed to work in the long-wave infrared portion of the electromagnetic spectrum ranging from about 8 ?m to about 12 ?m as well as the mid-wave portion ranging from about 3 ?m to about 5 ?m.

Abstract: According to various embodiments, a photodetector including a first contact layer, a second contact layer, an active region, and a photonic crystal resonant cavity is disclosed. The photonic crystal resonant cavity can operate as a resonant structure to enhance the response of the photodetector at one or more wavelengths. In various embodiments, the photodetectors including a photonic crystal resonant cavity can, for example, demonstrate increased responsivity and quantum efficiency, lower the operating temperature, and/or be used to form a hyperspectral detector.

Abstract: Methods are provided to generate eigenvalues and eigenfunctions for structures that include inhomogeneous media. In embodiments, eigenvalues and eigenfunctions generated as solutions to differential equations provide parameters for analyzing and constructing structures modeled by the differential equations.

Abstract: Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping levels to be achieved than for a bulk (random) alloy with the same average composition. Furthermore, the superlattice structures may improve the resistivity of the region, improving the current spreading of the region and hence the electronic properties of electronic devices such as optoelectronic devices.

Abstract: Exemplary embodiments provide an infrared (IR) retinal system and method for making and using the IR retinal system. The IR retinal system can include adaptive sensor elements, whose properties including, e.g., spectral response, signal-to-noise ratio, polarization, or amplitude can be tailored at pixel level by changing the applied bias voltage across the detector. “Color” imagery can be obtained from the IR retinal system by using a single focal plane array. The IR sensor elements can be spectrally, spatially and temporally adaptive using quantum-confined transitions in nanoscale quantum dots. The IR sensor elements can be used as building blocks of an infrared retina, similar to cones of human retina, and can be designed to work in the long-wave infrared portion of the electromagnetic spectrum ranging from about 8 ?m to about 12 ?m as well as the mid-wave portion ranging from about 3 ?m to about 5 ?m.

Abstract: A photodetector for use at wavelengths of 2 ?m and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 ?m, integrated with an avalanche multiplier region to provide low-rise gain. In one particular design, the intersubband absorption region is a quantum-confined absorption region (e.g., based on quantum wells and/or quantum dots).

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract: A photodetector for use at wavelengths of 2 ?m and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 ?m, integrated with an avalanche multiplier region to provide low-noise gain. In one particular design, the intersubband absorption region is a quantum-confined absorption region (e.g., based on quantum wells and/or quantum dots).

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract: A cross-connect switch (12) uses a matrix (40) for providing connection paths. The matrix (40) includes prioritization logic (42) for receiving connection requests from restoration state machines (50) (for changing connections responsive to line conditions) and an administrative processor (for changing connections responsive to operator commands). Connection requests from both the restoration state machines (50) and the administrative processor (52) are cached in FIFO memories (54). When a FIFO memory (54) stores one or more connection requests, the switching control circuitry is notified by a data ready signal. Logic (56) inhibits passing of the data ready signal from the FIFO memory (54) to the switching control (26) until all restoration connection requests have been serviced.

Abstract: According to various embodiments, a photodetector including a first contact layer, a second contact layer, an active region, and a photonic crystal resonant cavity is disclosed. The photonic crystal resonant cavity can operate as a resonant structure to enhance the response of the photodetector at one or more wavelengths. In various embodiments, the photodetectors including a photonic crystal resonant cavity can, for example, demonstrate increased responsivity and quantum efficiency, lower the operating temperature, and/or be used to form a hyperspectral detector.

Abstract: Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping levels to be achieved than for a bulk (random) alloy with the same average composition. Furthermore, the superlattice structures may improve the resistivity of the region, improving the current spreading of the region and hence the electronic properties of electronic devices such as optoelectronic devices.

Abstract: Methods are provided to generate eigenvalues and eigenfunctions for structures that include inhomogeneous media. In embodiments, eigenvalues and eigenfunctions generated as solutions to differential equations provide parameters for analyzing and constructing structures modeled by the differential equations.

Abstract: A photodetector for use at wavelengths of 2 ?m and longer has an intersubband absorption region to provide absorption at wavelengths beyond 2 ?m, integrated with an avalanche multiplier region to provide low-noise gain. In one particular design, the intersubband absorption region is a quantum-confined absorption region (e.g., based on quantum wells and/or quantum dots).

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.