Abstract: A magnetic solid state device is disclosed. The magnetic solid state device includes a substrate and a topological insulator deposited on top of the substrate. The magnetic solid state device also includes a first perpendicular magnetic anisotropy (PMA) bit having a reference PMA layer located on the topological insulator, and a second PMA bit having a free PMA layer located on the topological insulator. A gate contact is utilized to receive various predetermined voltages for controlling the Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between the reference PMA layer in the first PMA bit and the free PMA layer in the second PMA bit.

Abstract: A magnetic solid state device is disclosed. The magnetic solid state device includes a substrate and a topological insulator deposited on top of the substrate. The magnetic solid state device also includes a first perpendicular magnetic anisotropy (PMA) bit having a reference PMA layer located on the topological insulator, and a second PMA bit having a free PMA layer located on the topological insulator. A gate contact is utilized to receive various predetermined voltages for controlling the Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between the reference PMA layer in the first PMA bit and the free PMA layer in the second PMA bit.

Abstract: The present invention provides compounds of general formula 1 useful as potential phosphodiesterase3 (PDE3) inhibitory agents and a process for the preparation thereof. The derivatives of formula 1 can be employed as therapeutics in human and veterinary medicine, where they can be used, for example, for the treatment and prophylaxis of the following diseases: heart failure, dilated cardiomyopathy, platelet inhibitors, cancer and obstructive pulmonary diseases.

Abstract: The present invention provides compounds of formula 1 as potential phosphodiesterase3 (PDE3) inhibitory agents and a process for the preparation thereof. The derivatives of formula 1 can be employed as therapeutics in human and veterinary medicine, where they can be used, for the treatment and prophylaxis of the following diseases: heart failure, dilated cardiomyopathy, platelet inhibitors, cancer and obstructive pulmonary diseases.

Abstract: The invention relates to a process for the synthesis of pyridopyrimidine derivatives, which work as PDE3 inhibitors.

Abstract: The present invention provides compounds of general formula 1 useful as potential phosphodiesterase3 (PDE3) inhibitory agents and a process for the preparation thereof. The derivatives of formula 1 can be employed as therapeutics in human and veterinary medicine, where they can be used, for example, for the treatment and prophylaxis of the following diseases: heart failure, dilated cardiomyopathy, platelet inhibitors, cancer and obstructive pulmonary diseases.

Abstract: The present invention provides compounds of general formula A useful as potential phosphodiesterase3 (PDE3) inhibitory agents and a process for the preparation thereof. The derivatives of formula A can be employed as therapeutics in human and veterinary medicine, where they can be used, for example, for the treatment and prophylaxis of the following diseases: heart failure, dilated cardiomyopathy, platelet inhibitors, cancer and obstructive pulmonary diseases.

Abstract: The present invention provides compounds of formula 1 as potential phosphodiesterase3 (PDE3) inhibitory agents and a process for the preparation thereof. The derivatives of formula 1 can be employed as therapeutics in human and veterinary medicine, where they can be used, for the treatment and prophylaxis of the following diseases: heart failure, dilated cardiomyopathy, platelet inhibitors, cancer and obstructive pulmonary diseases.

Abstract: The present invention provides compounds of general formula A useful as potential phosphodiesterase3 (PDE3) inhibitory agents and a process for the preparation thereof. The derivatives of formula A can be employed as therapeutics in human and veterinary medicine, where they can be used, for example, for the treatment and prophylaxis of the following diseases: heart failure, dilated cardiomyopathy, platelet inhibitors, cancer and obstructive pulmonary diseases.

Abstract: The present invention provides compounds of formula 1 as potential phosphodiesterase3 (PDE3) inhibitory agents and a process for the preparation thereof. The derivatives of formula 1 can be employed as therapeutics in human and veterinary medicine, where they can be used, for the treatment and prophylaxis of the following diseases: heart failure, dilated cardiomyopathy, platelet inhibitors, cancer and obstructive pulmonary diseases.

Abstract: A MOSFET semiconductor device having an asymmetric channel region between the source region and the drain region. In one embodiment, the device comprises a mesa structure on a silicon substrate with the source region being in the substrate and the mesa structure extending from the source region and substrate. The asymmetric channel region can include silicon abutting the source region and a heterostructure material such as Si1-xGex extending to and abutting the drain region. The mole fraction of Ge can increase towards the drain region either uniformly or in steps. In one embodiment, the doping profile of the channel region is non-uniform with higher doping near the source region and lower doping near the drain region.

Abstract: A MOSFET semiconductor device having an asymmetric channel region between the source region and the drain region. In one embodiment, the device comprises a mesa structure on a silicon substrate with the source region being in the substrate and the mesa structure extending from the source region and substrate. The asymmetric channel region can include silicon abutting the source region and a heterostructure material such as Si1-xGex extending to and abutting the drain region. The mole fraction of Ge can increase towards the drain region either uniformly or in steps. In one embodiment, the doping profile of the channel region is non-uniform with higher doping near the source region and lower doping near the drain region.

Abstract: A heterojunction transistor with high mobility carriers in the channel region includes a source region and a drain region formed in a semiconductor body with the source region and the drain region comprising doped semiconductor alloys separated from the substrate by heterojunctions. A channel region is provided between the source region and the drain region comprising an undoped layer of an alloy of the semiconductor material and a deposited layer of material of the semiconductor body overlying the undoped layer. A gate electrode is formed on a gate oxide over the channel region. In fabricating the high mobility heterojunction transistor, the spaced source and drain regions are formed in the substrate by implanting dopant of conductivity type opposite to the substrate and a material in the alloy and then annealing the structure to form the alloy of the semiconductor material under the undoped layer.