Abstract: A system includes a substrate support on which to receive a transparent substrate, a non-contact sensor adapted to detect and image a dot pattern etched on a front surface of the transparent substrate, and a processing device attached to the non-contact sensor. The processing device may determine, using imaging data from the non-contact sensor, an orientation of a right-angled edge of the dot pattern. The processing device may determine, based on the orientation of the right-angled edge, whether a front surface of the transparent substrate is facing up or facing down. The processing device may also direct a robot to transfer the transparent substrate to a processing chamber dependent on whether the front surface of the transparent substrate is facing up or facing down.

Abstract: An electronic device processing system includes a factory interface (FI), substrate carrier(s), a humidity sensor, an oxygen sensor, and an environmental control system coupled to the FI. A processor of the environmental control system is to cause inert gas to be provided to an FI chamber and inert gas exhausted from the FI chamber to be circulated back into the FI chamber. The processor is also to identify conditions to be satisfied before opening a door of the substrate carriers. The processor is to control the humidity level based on detection by the humidity sensor or the oxygen level based on detection by the oxygen sensor. If the one or more conditions are satisfied, the processor is to open the carrier door to enable passing of substrates between the FI chamber and the substrate carriers.

Abstract: Electronic device processing systems including environmental control of the factory interface are described. One electronic device processing system has a factory interface having a factory interface chamber, a load lock apparatus coupled to the factory interface, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface and operational to monitor or control one of: relative humidity, temperature, an amount of oxygen, or an amount of inert gas within the factory interface chamber. In another aspect, purge of a carrier purge chamber within the factory interface chamber is provided. Methods for processing substrates are described, as are numerous other aspects.

Abstract: A factory interface for an electronic device processing system includes a factory interface chamber, an inert gas supply conduit, an exhaust conduit and an inert gas recirculation system. The inert gas supply conduit supplies an inert gas into the factory interface chamber. The exhaust conduit exhausts the inert gas from the factory interface chamber. The inert gas recirculation system recirculates the inert gas exhausted from the factory interface chamber back into the factory interface chamber.

Abstract: A system includes a substrate support on which to receive a transparent substrate, a non-contact sensor adapted to detect and image a dot pattern etched on a front surface of the transparent substrate, and a processing device attached to the non-contact sensor. The processing device may determine, using imaging data from the non-contact sensor, an orientation of a right-angled edge of the dot pattern. The processing device may determine, based on the orientation of the right-angled edge, whether a front surface of the transparent substrate is facing up or facing down. The processing device may also direct a robot to transfer the transparent substrate to a processing chamber dependent on whether the front surface of the transparent substrate is facing up or facing down.

Abstract: A factory interface for an electronic device processing system includes a factory interface chamber, an inert gas supply conduit, an exhaust conduit and an inert gas recirculation system. The inert gas supply conduit supplies an inert gas into the factory interface chamber. The exhaust conduit exhausts the inert gas from the factory interface chamber. The inert gas recirculation system recirculates the inert gas exhausted from the factory interface chamber back into the factory interface chamber.

Abstract: Electronic device processing systems including environmental control of the factory interface are described. One electronic device processing system has a factory interface having a factory interface chamber, a load lock apparatus coupled to the factory interface, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface and operational to monitor or control one of: relative humidity, temperature, an amount of oxygen, or an amount of inert gas within the factory interface chamber. In another aspect, purge of a carrier purge chamber within the factory interface chamber is provided. Methods for processing substrates are described, as are numerous other aspects.

Abstract: Electronic device processing systems including environmental control of the factory interface are described. One electronic device processing system has a factory interface having a factory interface chamber, a load lock apparatus coupled to the factory interface, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface and operational to monitor or control one of: relative humidity, temperature, an amount of oxygen, or an amount of inert gas within the factory interface chamber. In another aspect, purge of a carrier purge chamber within the factory interface chamber is provided. Methods for processing substrates are described, as are numerous other aspects.

Abstract: Electronic device processing systems including environmental control of the factory interface are described. One electronic device processing system has a factory interface having a factory interface chamber, a load lock apparatus coupled to the factory interface, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface and operational to monitor or control one of: relative humidity, temperature, an amount of oxygen, or an amount of inert gas within the factory interface chamber. In another aspect, purge of a carrier purge chamber within the factory interface chamber is provided. Methods for processing substrates are described, as are numerous other aspects.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer program product for process control in chemical mechanical polishing is described. The product includes instructions to cause a processor to receive a measurement of an initial pre-polishing thickness of a layer of a substrate from a metrology station, determine a value for a parameter of an endpoint algorithm from the initial thickness of the substrate, receive a monitoring signal generated from monitoring in-situ polishing of the substrate, process the monitoring signal to detect a signal feature indicating a final or intermediate endpoint and send instructions to stop polishing when an endpoint criterion is detected using the endpoint algorithm with the determined value for the parameter.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.