Abstract: In one embodiment, a first transistor is configured to switch ON to discharge accumulated charges on an interconnect line during a metallization process. This advantageously protects a second transistor, which is coupled to the interconnect line, from charge buildup. The gate of the first transistor may be coupled to the interconnect line by way of a coupling capacitor. The gate of the first transistor may remain floating during the metallization process, and subsequently coupled to ground at a topmost metal level. The metallization process may be physical vapor deposition, for example.

Abstract: Disclosed is an apparatus and method for an interface for scheduling the store-forwarding of back-to-back multi-channel packet fragments. The apparatus may include a data extraction block, a plurality of data assemblers, a scheduler, and an output memory. The scheduler may be configured to operate according to a scheduling policy. The scheduling policy may include a set of priorities to determine an order of scheduling writes to the output memory from a plurality of data assemblers.

Abstract: Disclosed is an apparatus and method used in an interface for scheduling the store-forwarding of back-to-back multi-channel packet fragments, comprising a first-in-first-out (FIFO) memory, a read pointer of the FIFO memory, the read pointer to increment by at least one of a unit access per read and a fraction of the unit access per read, and a write pointer of the FIFO memory, the write pointer to increment by at least one of a unit access per write and a fraction of the unit access per write.

Abstract: In one embodiment, a level in a process technology for an integrated circuit that has dummy metal patterns is represented as a level in a process model. The level of the process model may comprise a high-k dielectric to represent the dummy metal patterns. In the level of the process model, each metal line may be surrounded by a normal dielectric. If the process technology has voids or pockets of air in between the metal lines, then each void or air pocket may be placed in a normal dielectric in the process model. Among other advantages, this allows the process model to take into account the effects of the dummy metal patterns.

Abstract: In one embodiment, a first transistor is configured to switch ON to discharge accumulated charges on an interconnect line during a metallization process. This advantageously protects a second transistor, which is coupled to the interconnect line, from charge buildup. The gate of the first transistor may be coupled to the interconnect line by way of a coupling capacitor. The gate of the first transistor may remain floating during the metallization process, and subsequently coupled to ground at a topmost metal level. The metallization process may be physical vapor deposition, for example.