Patents by Inventor Sanjay Shinde

Sanjay Shinde has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9053926
    Abstract: Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: June 9, 2015
    Assignees: International Business Machines Corporation, Canon Anelva Corporation
    Inventors: Paul Jamison, Juntao Li, Vamsi Paruchuri, Tuan A. Vo, Takaaki Tsunoda, Sanjay Shinde
  • Publication number: 20140273425
    Abstract: Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness.
    Type: Application
    Filed: March 18, 2013
    Publication date: September 18, 2014
    Applicants: CANON ANELVA CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Paul Jamison, Juntao Li, Vamsi Paruchuri, Tuan A. Vo, Takaaki Tsunoda, Sanjay Shinde
  • Patent number: 7981805
    Abstract: The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O2, O3, N2, H2O, N2O, NO2, CO and CO2 to at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: July 19, 2011
    Assignee: Canon Anelva Corporation
    Inventors: Yoshimitsu Kodaira, Tomoaki Osada, Sanjay Shinde
  • Publication number: 20110021000
    Abstract: The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O2, O3, N2, H2O, N2O, NO2, CO and CO2 to at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.
    Type: Application
    Filed: August 6, 2010
    Publication date: January 27, 2011
    Applicant: CANON ANELVA CORPORATION
    Inventors: Yoshimitsu Kodaira, Tomoaki Osada, Sanjay Shinde
  • Publication number: 20100304504
    Abstract: Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers i n the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N2 with using a mask of non-organic material such as Ta. As results, in a studied example, a MTJ taper angle is nearly vertical.
    Type: Application
    Filed: May 27, 2009
    Publication date: December 2, 2010
    Applicant: Canon ANELVA Corporation
    Inventors: Sanjay Shinde, Yoshimitsu Kodaira, Taroh Furumochi
  • Publication number: 20100301008
    Abstract: Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers in the device are etched by a mixed gas of a hydrogen gas and an inert gas such as N2 with using a mask of non-organic material such as Ta. As results, in a studied example, a MTJ taper angle is nearly vertical.
    Type: Application
    Filed: May 24, 2010
    Publication date: December 2, 2010
    Applicant: CANON ANELVA CORPORATION
    Inventors: Sanjay Shinde, Yoshimitsu Kodaira, Taroh Furumochi
  • Publication number: 20040165611
    Abstract: This invention adds one extra bit which can be viewed as a shadow of most significant bit of the serial register. This extra register bit is referred as buffer_flop. When the receive data is coming in, the data bits keep shifting into the serial register of the serializer block bit by bit. The first bits enters into the most significant bit of the serial register and is shifted towards the least significant bit of the serial register. When a whole block of bits (32 bits) are received, the serializer is full and is read into the VBUS clock domain. The first bit of next block of bits is stored in the buffer flop. The second bit is stored in the most significant bit of the serializer and the buffer flop bit is copied into the second most significant bit of the serializer. Subsequent bits are received and right shifted by one.
    Type: Application
    Filed: January 9, 2004
    Publication date: August 26, 2004
    Inventors: Subash Chandar Govindarajan, Sanjay Shinde