Patents by Inventor Sanjeev Tandon

Sanjeev Tandon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200021597
    Abstract: A method for controlling access to one or more of a plurality of target systems includes receiving profile data that defines one or more features associated with a plurality of individuals with one or more entitlements of those individuals. Each entitlement is indicative of target system access. The method further includes generating a model that relates the one or more features and the one or more entitlements of the plurality of individuals. Profile data that defines one or more features associated with a target individual is received from a first user management system. A listing that includes one or more entitlements associated with the target individual, and confidence values associated with the one or more entitlements is generated based on the profile data and the model. Each confidence value is indicative of whether the target individual should be granted a corresponding entitlement.
    Type: Application
    Filed: September 24, 2019
    Publication date: January 16, 2020
    Applicant: Accenture Global Solutions Limited
    Inventors: Rexall E. Thexton, Gaurav Tandon, Sanjeev Shukla, Anthony McCoy, Sidath Mudiyanselage, Andrew Poole, Hannah Craddock, Qurrat Ul Ain, Colleen Connolly, Farbod Kamiab
  • Patent number: 10521582
    Abstract: An access management robot facilitation system facilitates a robot to execute access management tasks on a target system.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: December 31, 2019
    Assignee: ACCENTURE GLOBAL SOLUTIONS LIMITED
    Inventors: Sanjeev Shukla, Gaurav Tandon, Rexall E. Thexton, Neha Joshi, David Michael Parker, Avinash Ramesh, Krishna M. Dasari, Parvathy Ramakrishnan
  • Publication number: 20190260755
    Abstract: A method for controlling access to one or more of a plurality of target systems includes receiving profile data that defines one or more features associated with a plurality of individuals with one or more entitlements of those individuals. Each entitlement is indicative of target system access. The method further includes generating a model that includes one or more sets of rules where each set of rules is associated with an entitlement of the profile data. Each entitlement is indicative of target system/application access. Each rule within a set relates a combination of one or more features of the profile data with a confidence value. Profile data that defines one or more features associated with a target individual is received from a first user management system. A listing that includes one or more entitlements associated with the target individual, and confidence values associated with the one or more entitlements is generated based on the profile data and the rules.
    Type: Application
    Filed: June 22, 2018
    Publication date: August 22, 2019
    Inventors: Rexall E. Thexton, Gaurav Tandon, Sanjeev Shukla, Anthony McCoy, Sidath Mudiyanselage, Andrew Poole, Hannah Craddock, Qurrat Ul Ain, Colleen Connolly, Farbod Kamiab
  • Publication number: 20190260752
    Abstract: A method for controlling access to one or more of a plurality of target systems includes receiving profile data that defines one or more features associated with a plurality of individuals with one or more entitlements of those individuals. Each entitlement is indicative of target system access. The method further includes generating a model that relates the one or more features and the one or more entitlements of the plurality of individuals. Profile data that defines one or more features associated with a target individual is received from a first user management system. A listing that includes one or more entitlements associated with the target individual, and confidence values associated with the one or more entitlements is generated based on the profile data and the model. Each confidence value is indicative of whether the target individual should be granted a corresponding entitlement.
    Type: Application
    Filed: February 20, 2018
    Publication date: August 22, 2019
    Inventors: Rexall E. Thexton, Gaurav Tandon, Sanjeev Shukla, Anthony McCoy, Sidath Mudiyanselage, Andrew Poole, Hannah Craddock, Qurrat Ul Ain, Colleen Connolly, Farbod Kamiab
  • Patent number: 9929215
    Abstract: A method of forming an organic semiconductor includes forming a thin film transistor (“TFT”) backplane; forming a pixel well over the TFT backplane using a photoresist; performing a first plasma etch of the pixel well; stripping the photoresist in the pixel well; performing a second plasma etch of the pixel well; performing a first wash of the pixel well; exposing the pixel well to ultraviolet light; performing a second wash of the pixel well; and forming an organic photodiode in the pixel well.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: March 27, 2018
    Assignee: DPIX, LLC
    Inventors: Robert Rodriquez, Shawn Michael O'Rourke, Michael Robert Johnson, Sanjeev Tandon
  • Publication number: 20180019284
    Abstract: A method of forming an organic semiconductor includes forming a thin film transistor (“TFT”) backplane; forming a pixel well over the TFT backplane using a photoresist; performing a first plasma etch of the pixel well; stripping the photoresist in the pixel well; performing a second plasma etch of the pixel well; performing a first wash of the pixel well; exposing the pixel well to ultraviolet light; performing a second wash of the pixel well; and forming an organic photodiode in the pixel well.
    Type: Application
    Filed: April 21, 2017
    Publication date: January 18, 2018
    Inventors: Robert Rodriquez, Shawn Michael O'Rourke, Michael Robert Johnson, Sanjeev Tandon
  • Publication number: 20090111284
    Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H3C)—N?N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.
    Type: Application
    Filed: January 5, 2009
    Publication date: April 30, 2009
    Inventors: Yaxin Wang, Yuji Maeda, Thomas C. Mele, Sean M. Seutter, Sanjeev Tandon, R. Suryanarayanan Iyer
  • Patent number: 7488690
    Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: February 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Andrew M. Lam, Yuji Maeda, Thomas Mele, Jacob W. Smith, Sean M. Seutter, Sanjeev Tandon, Randhir P. Singh Thakur, Sunderraj Thirupapuliyur
  • Patent number: 7473655
    Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: January 6, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Yaxin Wang, Yuji Maeda, Thomas C. Mele, Sean M. Seutter, Sanjeev Tandon, R. Suryanarayanan Iyer
  • Patent number: 7465669
    Abstract: Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer including silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer including silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.
    Type: Grant
    Filed: November 12, 2005
    Date of Patent: December 16, 2008
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Sanjeev Tandon, Kangzhan Zhang, Rubi Lapena, Yuji Maeda
  • Patent number: 7416995
    Abstract: A method for fabricating a multiple layer silicon nitride film on a semiconductor substrate is provided herein. In one embodiment, a method for fabricating a multiple layer silicon nitride film on a semiconductor substrate includes providing a substrate over which the multiple layer silicon nitride film is to be formed; and forming the multiple layer silicon nitride film in a single processing reactor by: (a) depositing a base layer comprising silicon nitride on the base structure; (b) depositing a middle layer comprising a stress-controlling material on the base layer; and (c) depositing a top layer comprising silicon nitride on the middle layer. The stress-controlling material selectively increases or reduces the stress of the multiple layer silicon nitride film as compared to silicon nitride alone.
    Type: Grant
    Filed: November 12, 2005
    Date of Patent: August 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Sanjeev Tandon, Jacob W. Smith
  • Patent number: 7365029
    Abstract: Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R?2)—Si(R?2)—NR2 (amino(di)silanes), R3—Si—N?N?N (silyl azides), R?3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R? comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.
    Type: Grant
    Filed: June 14, 2005
    Date of Patent: April 29, 2008
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Sean M. Seutter, Sanjeev Tandon, Errol Antonio C. Sanchez, Shulin Wang
  • Publication number: 20080063798
    Abstract: The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
    Type: Application
    Filed: August 29, 2007
    Publication date: March 13, 2008
    Inventors: Shreyas Kher, Son Nguyen, Pravin Narwankar, Sanjeev Tandon, Steve Jumper, Vincent Sermona
  • Patent number: 7294581
    Abstract: Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may be formed over the base structure by depositing a first layer comprising silicon nitride on the base structure, depositing a second layer comprising a silicon-based dielectric material on the first layer, and depositing a third layer comprising silicon nitride on the second layer. The first, second, and third layers are deposited in a single processing reactor.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: November 13, 2007
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Sanjeev Tandon
  • Publication number: 20070111538
    Abstract: Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer comprising silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer comprising silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.
    Type: Application
    Filed: November 12, 2005
    Publication date: May 17, 2007
    Inventors: R. Iyer, Sanjeev Tandon, Kangzhan Zhang, Rubi Lapena, Yuji Maeda
  • Publication number: 20070111546
    Abstract: A method for fabricating a multiple layer silicon nitride film on a semiconductor substrate is provided herein. In one embodiment, a method for fabricating a multiple layer silicon nitride film on a semiconductor substrate includes providing a substrate over which the multiple layer silicon nitride film is to be formed; and forming the multiple layer silicon nitride film in a single processing reactor by: (a) depositing a base layer comprising silicon nitride on the base structure; (b) depositing a middle layer comprising a stress-controlling material on the base layer; and (c) depositing a top layer comprising silicon nitride on the middle layer. The stress-controlling material selectively increases or reduces the stress of the multiple layer silicon nitride film as compared to silicon nitride alone.
    Type: Application
    Filed: November 12, 2005
    Publication date: May 17, 2007
    Inventors: R. Iyer, Sanjeev Tandon, Jacob Smith
  • Publication number: 20070087575
    Abstract: Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may be formed over the base structure by depositing a first layer comprising silicon nitride on the base structure, depositing a second layer comprising a silicon-based dielectric material on the first layer, and depositing a third layer comprising silicon nitride on the second layer. The first, second, and third layers are deposited in a single processing reactor.
    Type: Application
    Filed: October 17, 2005
    Publication date: April 19, 2007
    Inventors: R. Iyer, Sanjeev Tandon
  • Publication number: 20060286818
    Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
    Type: Application
    Filed: June 17, 2005
    Publication date: December 21, 2006
    Inventors: Yaxin Wang, Yuji Maeda, Thomas Mele, Sean Seutter, Sanjeev Tandon, R. Iyer
  • Publication number: 20060009041
    Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
    Type: Application
    Filed: July 6, 2004
    Publication date: January 12, 2006
    Inventors: R. Iyer, Andrew Lam, Yuji Maeda, Thomas Mele, Faran Nouri, Jacob Smith, Sean Seutter, Sanjeev Tandon, Randhir Singh Thakur, Sunderraj Thirupapuliyur
  • Publication number: 20050255714
    Abstract: Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R?2)—Si(R?2)—NR2 (amino(di)silanes), R3—Si—N?N?N (silyl azides), R?3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R? comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.
    Type: Application
    Filed: June 14, 2005
    Publication date: November 17, 2005
    Inventors: R. Iyer, Sean Seutter, Sanjeev Tandon, Errol Sanchez, Shulin Wang