Patents by Inventor Sanket Sant
Sanket Sant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210110998Abstract: An apparatus for processing a substrate is provided. A chamber wall forms a processing chamber cavity. A substrate support for supporting the substrate is within the processing chamber cavity. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. A window for passing RF power into the processing chamber cavity comprises a quartz window body and a coating of at least one of erbium oxide, erbium fluoride, samarium oxide, samarium fluoride, thulium oxide thulium fluoride, gadolinium oxide, or gadolinium fluoride on a surface of the ceramic window body. A coil is outside of the processing chamber cavity, wherein the window is between the processing chamber cavity and the coil.Type: ApplicationFiled: February 24, 2020Publication date: April 15, 2021Inventor: Sanket Sant
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Publication number: 20200203126Abstract: An apparatus for processing a substrate is provided. A chamber wall forms a processing chamber cavity. A substrate support for supporting the substrate is within the processing chamber cavity. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. A window for passing RF power into the processing chamber cavity comprises a quartz window body and a coating of at least one of erbium oxide, erbium fluoride, samarium oxide, samarium fluoride, thulium oxide thulium fluoride, gadolinium oxide, or gadolinium fluoride on a surface of the ceramic window body. A coil is outside of the processing chamber cavity, wherein the window is between the processing chamber cavity and the coil.Type: ApplicationFiled: February 24, 2020Publication date: June 25, 2020Inventor: Sanket Sant
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Publication number: 20160365261Abstract: An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. An edge ring is on the substrate support, wherein the edge ring comprises nitrogen free doped quartz with a dopant of either AlO and YO or a dopant of LaO. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. At least one electrode provides RF power into the processing chamber.Type: ApplicationFiled: June 6, 2016Publication date: December 15, 2016Inventor: Sanket SANT
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Publication number: 20160358749Abstract: An apparatus for processing a substrate is provided. A chamber wall forms a processing chamber cavity. A substrate support for supporting the substrate is within the processing chamber cavity. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. A window for passing RF power into the processing chamber cavity comprises a ceramic or quartz window body and a coating of at least one of erbium oxide, erbium fluoride, samarium oxide, samarium fluoride, thulium oxide thulium fluoride, gadolinium oxide, or gadolinium fluoride on a surface of the ceramic window body. A coil is outside of the processing chamber cavity, wherein the window is between the processing chamber cavity and the coil.Type: ApplicationFiled: May 18, 2016Publication date: December 8, 2016Inventor: Sanket Sant
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Patent number: 9117766Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: GrantFiled: September 30, 2014Date of Patent: August 25, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Patent number: 9029267Abstract: A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition.Type: GrantFiled: May 16, 2013Date of Patent: May 12, 2015Assignee: Lam Research CorporationInventors: Sanket Sant, Raphael Casaes
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Publication number: 20150024602Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: ApplicationFiled: September 30, 2014Publication date: January 22, 2015Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Publication number: 20140342568Abstract: A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition.Type: ApplicationFiled: May 16, 2013Publication date: November 20, 2014Applicant: Lam Research CorporationInventors: Sanket Sant, Raphael Casaes
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Patent number: 8865598Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: GrantFiled: December 2, 2013Date of Patent: October 21, 2014Assignee: Micron Technology, Inc.Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Patent number: 8784676Abstract: A method for reducing contamination in an etch chamber is provided. A substrate with a metal containing layer is placed in the etch chamber. The metal containing layer is etched, producing nonvolatile metal residue deposits on surfaces of the etch chamber, wherein some of the metal residue of the metal residue deposits is in a first state. The substrate is removed from the etch chamber. The chamber is conditioned by converting metal residue in the first state to metal residue in a second state, where metal residue in the second state has stronger adhesion to surfaces of the etch chamber than metal residue in the first state.Type: GrantFiled: February 3, 2012Date of Patent: July 22, 2014Assignee: Lam Research CorporationInventors: Joydeep Guha, Sanket Sant, Butsurin Jinnai
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Publication number: 20140087563Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: ApplicationFiled: December 2, 2013Publication date: March 27, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Patent number: 8598041Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: GrantFiled: April 16, 2012Date of Patent: December 3, 2013Assignee: Micron Technology, Inc.Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Patent number: 8525139Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.Type: GrantFiled: October 20, 2010Date of Patent: September 3, 2013Assignee: Lam Research CorporationInventors: Harmeet Singh, Sanket Sant, Shang-I Chou, Vahid Vahedi, Raphael Casaes, Seetharaman Ramachandran
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Publication number: 20130203255Abstract: A method for reducing contamination in an etch chamber is provided. A substrate with a metal containing layer is placed in the etch chamber. The metal containing layer is etched, producing nonvolatile metal residue deposits on surfaces of the etch chamber, wherein some of the metal residue of the metal residue deposits is in a first state. The substrate is removed from the etch chamber. The chamber is conditioned by converting metal residue in the first state to metal residue in a second state, where metal residue in the second state has stronger adhesion to surfaces of the etch chamber than metal residue in the first state.Type: ApplicationFiled: February 3, 2012Publication date: August 8, 2013Applicant: LAM RESEARCH CORPORATIONInventors: Joydeep GUHA, Sanket SANT, Butsurin JINNAI
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Publication number: 20120202350Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: ApplicationFiled: April 16, 2012Publication date: August 9, 2012Applicant: Micron Technology, Inc.Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Patent number: 8232538Abstract: A method and apparatus for removing halogen residue from a processed wafer is provided. A wafer is transferred into a processing tool where it is processed in a manner that leaves halogen residue on the wafer. The processed wafer is then moved into a degas chamber where it is treated with UV light and a gas mixture containing at least one of ozone and oxygen to remove the halogen residue. Once treated, the wafer is transferred into an isolation station where it is isolated from the unprocessed wafers for a period of time to allow any remaining residue to dissipate before it is returned to the cassette where it started.Type: GrantFiled: October 27, 2009Date of Patent: July 31, 2012Assignee: Lam Research CorporationInventors: Sanket Sant, Shang-I Chou
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Patent number: 8173550Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: GrantFiled: July 11, 2011Date of Patent: May 8, 2012Assignee: Micron Technology, Inc.Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Publication number: 20110269252Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: ApplicationFiled: July 11, 2011Publication date: November 3, 2011Applicant: Micron Technology, Inc.Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
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Patent number: 8003542Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: GrantFiled: June 22, 2009Date of Patent: August 23, 2011Assignee: Micron Technology, Inc.Inventors: Sanket Sant, Gurtej S. Sandhu, Neal R. Rueger
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Publication number: 20110097902Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.Type: ApplicationFiled: October 20, 2010Publication date: April 28, 2011Applicant: LAM RESEARCH CORPORATIONInventors: Harmeet Singh, Sanket Sant, Shang-I Chou, Vahid Vahedi, Raphael Casaes, Seetharaman Ramachandran