Patents by Inventor Sanshiro Komiya

Sanshiro Komiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diruthenium complex, and material and method for chemical vapor deposition
    Patent number: 8440260
    Abstract: A diruthenium complex such as tetra(?-formato)diruthenium(II,II) or tetra(?-formato)(dehydrate)diruthenium(II,II), a material for chemical vapor deposition which comprises the complex, and a method of forming a ruthenium film from the material by chemical vapor deposition.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: May 14, 2013
    Assignee: JSR Corporation
    Inventors: Tatsuya Sakai, Sanshiro Komiya, Naofumi Nomura
  • Method for producing ruthenium compound
    Patent number: 8278471
    Abstract: A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, l is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: October 2, 2012
    Assignees: JSR Corporation, Tri Chemical Laboratories Inc.
    Inventors: Ryuuichi Saitou, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai, Sanshiro Komiya, Naoto Noda, Maki Nishiguchi
  • METHOD FOR PRODUCING RUTHENIUM COMPOUND
    Publication number: 20120101290
    Abstract: A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, 1 is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.
    Type: Application
    Filed: October 24, 2011
    Publication date: April 26, 2012
    Applicants: TRI Chemical Laboratories, Inc., JSR CORPORATION
    Inventors: Ryuuichi SAITOU, Kang-go Chung, Hideki Nishimura, Tatsuya Sakai, Sanshiro Komiya, Naoto Noda, Maki Nishiguchi
  • DIRUTHENIUM COMPLEX, AND MATERIAL AND METHOD FOR CHEMICAL VAPOR DEPOSITION
    Publication number: 20110129602
    Abstract: A diruthenium complex such as tetra(?-formato)diruthenium(II,II) or tetra(?-formato)(dehydrate)diruthenium(II,II), a material for chemical vapor deposition which comprises the complex, and a method of forming a ruthenium film from the material by chemical vapor deposition.
    Type: Application
    Filed: September 4, 2008
    Publication date: June 2, 2011
    Applicant: JSR CORPORATION
    Inventors: Tatsuya Sakai, Sanshiro Komiya, Naofumi Nomura