Abstract: Methods of manufacturing semiconductor packages with metal-plated shields include roughening surfaces of a molding compound by an abrasion process such that the surfaces have an unnatural surface roughness that is rougher than a natural surface roughness. In one embodiment, the method includes obtaining a molded array including a plurality of dies coupled to a substrate and a molding compound encapsulating the plurality of dies, coating all exposed surfaces of the molding compound with an adhesion promoter material, heating the molded array with an adhesion promoter material such that the adhesion promoter material reacts with a portion of the molding compound, resulting in a baked film, and etching away the baked film, resulting in the molding compound having the roughened surfaces. Preferably, the method also includes depositing a catalyst material on the roughened surfaces before a metal layer is coated on the roughened surfaces to speed up the time for the metal layer to adhere to the roughened surfaces.

Abstract: Embodiments of the present invention relate to a semiconductor package with a metal-plated shield. Surfaces of molding compound are roughened by an abrasion process such that the surfaces have an unnatural surface roughness that is rougher than a natural surface roughness. The roughened surfaces provide better adhesion of the metal-plated shield to the roughened surfaces than to untreated surfaces (e.g., surfaces with the natural surface roughness). A catalyst material can be deposited on the roughened surfaces of the molding compound before a metal layer is coated on the roughened surfaces of the molding compound to speed up the time for the metal layer to adhere to the roughened surfaces of the molding compound. The metal-plated shield can include plurality of metal layers plated on top of each other.