Patents by Inventor Santhana Parthasarathy

Santhana Parthasarathy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070251455
    Abstract: A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
    Type: Application
    Filed: April 28, 2006
    Publication date: November 1, 2007
    Applicant: GT Equipment Technologies, Inc.
    Inventors: Yuepeng Wan, Santhana Parthasarathy, Carl Chartier, Adrian Servini, Chandra Khattak
  • Publication number: 20070148034
    Abstract: A bulk silicon material for making silicon ingots, consisting of silicon pellets, and a method for making the pellets from an agglomerate-free source of high purity, ultra fine silicon powder by feeding a controlled amount of silicon powder into a pellet die, and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50-85% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.
    Type: Application
    Filed: January 30, 2007
    Publication date: June 28, 2007
    Applicant: GT SOLAR INCORPORATED
    Inventors: Kedar Gupta, Yuepeng Wan, Santhana Parthasarathy, Chandra Khattak
  • Publication number: 20060219162
    Abstract: A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 5, 2006
    Applicant: G.T. Equipment Technologies, Inc.
    Inventors: Santhana Parthasarathy, Yuepeng Wan, Carl Chartier, Jonathan Talbott, Kedar Gupta