Patents by Inventor Santo Puzzolo

Santo Puzzolo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming an integrated emitter switching configuration using bipolar transistors
    Patent number: 5866461
    Abstract: A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N- epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: February 2, 1999
    Assignees: STMicroelectronics s.r.l., Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno
    Inventors: Santo Puzzolo, Raffaele Zambrano, Mario Paparo
  • Integrated emitter switching configuration using bipolar transistors
    Patent number: 5500551
    Abstract: A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N- epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor.
    Type: Grant
    Filed: July 11, 1994
    Date of Patent: March 19, 1996
    Assignees: SGS-Thomson Microelectronics, S.r.l., Consorzio per la Ricerca Sulla Microelettronica nel Mezzogiorro
    Inventors: Santo Puzzolo, Raffaele Zambrano, Mario Paparo
  • Integrated emitter switching configuration using bipolar transistors
    Patent number: 5376821
    Abstract: A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N-epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor.
    Type: Grant
    Filed: December 23, 1991
    Date of Patent: December 27, 1994
    Assignees: SGS-Thomson Microelectronics, S.r.l., Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno
    Inventors: Santo Puzzolo, Raffaele Zambrano, Mario Paparo