Patents by Inventor Santos F. Alvarado

Santos F. Alvarado has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programmable non-volatile resistance switching device
    Patent number: 7465952
    Abstract: A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.
    Type: Grant
    Filed: September 29, 2005
    Date of Patent: December 16, 2008
    Assignee: International Business Machines Corporation
    Inventors: Santos F. Alvarado, Johannes Georg Bednorz, Gerhard Ingmar Meijer
  • Programmable Non-Volatile Resistance Switching Device
    Publication number: 20080164455
    Abstract: A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.
    Type: Application
    Filed: March 12, 2008
    Publication date: July 10, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Santos F. Alvarado, Johannes Georg Bednorz, Gerhard Ingmar Meijer
  • Electrode structure for electronic and opto-electronic devices
    Patent number: 6995391
    Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: February 7, 2006
    Assignee: International Business Machines Corporation
    Inventors: Santos F. Alvarado, Tilman A. Beierlein, Brian K. Crone, Ute Drechsler, Roland Germann, Siegfried F. Karg, Peter Mueller, Lieike Riel, Walter Riess, Beat Ruhstaller, Paul Seidler, Roland Widmer