Patents by Inventor Santosh P. Caur

Santosh P. Caur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions
    Patent number: 4264382
    Abstract: A method for making lateral PNP or NPN devices in isolated monocrystalline silicon pockets wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline region. The P emitter or N emitter diffusion is made over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket. This structure reduces the vertical current injection which will give relatively high (beta) gain even at low base to emitter voltages. The lateral PNP or NPN device resulting from the method is in a monocrystalline silicon pocket wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline silicon region. The P emitter or N emitter diffusion is located over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket.
    Type: Grant
    Filed: October 12, 1979
    Date of Patent: April 28, 1981
    Assignee: International Business Machines Corporation
    Inventors: Narasipur G. Anantha, Harsaran S. Bhatia, Santosh P. Caur, Hans B. Pogge