Abstract: An apparatus for controlling the temperature in a processing chamber for semiconductor processing is disclosed herein. In one embodiment, a baffle assembly is configured to direct air flow from a center of a lid of the processing chamber to an outer edge of the lid. The baffle assembly has a baffle center having a side surface and a bottom surface, wherein the bottom surface is ring shaped with a central opening. The baffle assembly has a middle baffle extending outward from the side surface of the baffle center. The baffle assembly has a conical baffle extending inward from the side surface of the baffle center, and a top baffle extending upward from the side surface of the baffle center.

Abstract: Semiconductor processing systems and system components are described for providing regenerative heating to a foreline component. A system includes a plasma-based processing chamber. The processing chamber includes one or more fluid paths configured to circulate a heat transfer fluid. The system also includes one or more vacuum systems configured to exhaust process gases from the processing chamber, the one or more vacuum systems including one or more vacuum pumps and a foreline vent. The system includes a foreline regenerator. The foreline regenerator includes a regenerator shell at least partially surrounding the foreline vent, the regenerator shell including a heat transfer fluid input and a heat transfer fluid output, wherein the heat transfer fluid input is coupled to an output of the processing chamber.