Abstract: Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for analyzing a wafer for defects using cross-section analysis by applying a sacrificial layer on a surface of the wafer prior to forming a cavity into the wafer for analysis. In embodiments, an epoxy material may be placed into the cavity after analysis, and a capping layer placed on top of the epoxy material. The sacrificial layer, which may contain dislodged particles or debris from the formation of the cavity on its surface, is then removed, providing a clean surface on the wafer. The wafer may then be reintroduced into the manufacturing line for further processing. Other embodiments may be described and/or claimed.

Abstract: Various embodiments disclosed relate to methods of making omni-directional semiconductor interconnect bridges. The present disclosure includes semiconductor assemblies including a mold layer having mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material is heterogeneously dispersed.

Abstract: An integrated circuit includes a first die and a second die. The second die is embedded or otherwise contained in a layered interconnect structure of the first die. The second die can be an IC die or it can be an electrically inactive element, such as a heat spreader. A portion of the layered interconnect structure is laterally adjacent to the second die. A first part of the second die can be electrically connected to a second part of the second die via the interconnect structure of the first die. The second die can be operatively coupled to the first die using electrical connections between the second die and one or more interconnect layers above or below the second die, or to devices of the first die. A method of fabricating an interconnect structure with one or more embedded dies is also disclosed.

Abstract: A coherent confocal microscope and methods for measuring elements of the non-linear susceptibility of a nanoparticle, including, more particularly, all of the elements of the second-order susceptibility tensor of a single nanoparticle under permutation and Kleinman symmetry. Using a high numerical aperture lens, two-dimensional scanning and a vector beam shaper, the second-order nonlinear susceptibility is derived from a single confocal image. A forward model for the problem is presented and a computationally efficient data processing method robustly solves the inverse problem.

Abstract: A coherent confocal microscope and methods for measuring elements of the non-linear susceptibility of a nanoparticle, including, more particularly, all of the elements of the second-order susceptibility tensor of a single nanoparticle under permutation and Kleinman symmetry. Using a high numerical aperture lens, two-dimensional scanning and a vector beam shaper, the second-order nonlinear susceptibility is derived from a single confocal image. A forward model for the problem is presented and a computationally efficient data processing method robustly solves the inverse problem.