Abstract: The present disclosure relates to a method for forming a nanostencil mask. The method involves irradiating a substrate to increase resistivity of a plurality of first portions of the substrate relative to one or more second portions of the substrate surrounding the plurality of first portions. The method also involves passing a current through the substrate, the current preferentially passing through and weakening the one or more second portions of the substrate. This preference is a result of the higher resistivity in the one or more first portions of the substrate causing the current to pass through the relatively lower resistivity second portion(s). The method also involves subjecting the substrate to a material removal process, the material removal process preferentially removing the weakened one or more second portions of the substrate and thereby forming a nanostencil mask comprising the plurality of first portions of the substrate.

Abstract: The present disclosure relates to a method for forming a nanostencil mask. The method involves irradiating a substrate to increase resistivity of a plurality of first portions of the substrate relative to one or more second portions of the substrate surrounding the plurality of first portions. The method also involves passing a current through the substrate, the current preferentially passing through and weakening the one or more second portions of the substrate. This preference is a result of the higher resistivity in the one or more first portions of the substrate causing the current to pass through the relatively lower resistivity second portion(s). The method also involves subjecting the substrate to a material removal process, the material removal process preferentially removing the weakened one or more second portions of the substrate and thereby forming a nanostencil mask comprising the plurality of first portions of the substrate.