Patents by Inventor Sara E. Harrison

Sara E. Harrison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-based passivation-assisted plasma etching of III-v semiconductors
    Patent number: 11133190
    Abstract: According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: September 28, 2021
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Sara E. Harrison, Clint Frye, Rebecca J. Nikolic, Qinghui Shao, Lars F. Voss
  • Capacitance reduction for pillar structured devices
    Patent number: 9645262
    Abstract: In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: May 9, 2017
    Assignees: Lawrence Livermore National Security, LLC
    Inventors: Qinghui Shao, Adam Conway, Rebecca J. Nikolic, Lars Voss, Ishwara B. Bhat, Sara E. Harrison
  • CAPACITANCE REDUCTION FOR PILLAR STRUCTURED DEVICES
    Publication number: 20160356901
    Abstract: In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.
    Type: Application
    Filed: November 26, 2014
    Publication date: December 8, 2016
    Inventors: Qinghui Shao, Adam Conway, Rebecca J. Nikolic, Lars Voss, Ishwara B. Bhat, Sara E. Harrison