Abstract: A method of distributing an electric quantity through an electronic circuit for local exploitation by at least one circuit block of the electronic circuit that includes providing in the electronic circuit first and second conductive lines, the first conductive line distributing a first electric potential and the second conductive line carrying a second electric potential that is a dedicated reference electric potential for the first electric potential, the first and second electric potentials corresponding to the distributed electric quantity, and locally exploiting the distributed electric quantity by at least one circuit block of the electronic circuit, by locally reconstructing the distributed electric quantity from the first and second electric potentials without perturbing them, particularly without either sinking or injecting any significant current from or into the first and second conductive lines.

Abstract: A sensing circuit for a semiconductor memory comprising a circuit branch intended to be electrically coupled to a memory bit line having connected thereto a memory cell to be sensed. A bit line precharge circuit is provided, for precharging the memory bit line to a predetermined potential in a precharge phase of a memory cell sensing operation. An evaluation circuit is associated with the memory bit line for evaluating an electric quantity developing on the memory bit line during an evaluation phase of the memory cell sensing operation; the electric quantity that develops on the memory bit line is indicative of an information content of the memory cell. The bit line precharge circuit is adapted to both charging and discharging the memory bit line, so that the predetermined bit line potential is reached irrespective of a memory bit line initial potential at the beginning of the precharge phase.

Abstract: A method of distributing an electric quantity through an electronic circuit for local exploitation by at least one circuit block of the electronic circuit that includes providing in the electronic circuit first and second conductive lines, the first conductive line distributing a first electric potential and the second conductive line carrying a second electric potential that is a dedicated reference electric potential for the first electric potential, the first and second electric potentials corresponding to the distributed electric quantity, and locally exploiting the distributed electric quantity by at least one circuit block of the electronic circuit, by locally reconstructing the distributed electric quantity from the first and second electric potentials without perturbing them, particularly without either sinking or injecting any significant current from or into the first and second conductive lines.

Abstract: A sensing circuit for a semiconductor memory comprising a circuit branch intended to be electrically coupled to a memory bit line having connected thereto a memory cell to be sensed. A bit line precharge circuit is provided, for precharging the memory bit line to a predetermined potential in a precharge phase of a memory cell sensing operation. An evaluation circuit is associated with the memory bit line for evaluating an electric quantity developing on the memory bit line during an evaluation phase of the memory cell sensing operation; the electric quantity that develops on the memory bit line is indicative of an information content of the memory cell. The bit line precharge circuit is adapted to both charging and discharging the memory bit line, so that the predetermined bit line potential is reached irrespective of a memory bit line initial potential at the beginning of the precharge phase.