Abstract: The present disclosure includes methods of forming capacitive sensors. One method includes forming a first electrode array of the capacitive sensor on a first structure. Forming the first electrode array can include: forming a dielectric material on a substrate material; forming an electrode material on the dielectric material; removing portions of the electrode material to form a number of electrodes separated from each other; and removing at least a portion of the dielectric material from between the number of electrodes. The method can include bonding the first structure to a second structure having a second electrode array of the capacitive sensor formed thereon such that the number of electrodes of the first electrode array face a number of electrodes of the second electrode array.

Abstract: The present disclosure includes capacitive sensors and methods of forming capacitive sensors. One capacitive sensor includes a first substrate structure having a first dielectric material formed thereon and electrodes of a first electrode array formed on the first dielectric material. The sensor includes a second substrate structure facing the first substrate structure and having a second dielectric material formed thereon and electrodes of a second electrode array formed on the second dielectric material. The sensor includes a removed portion of the first dielectric material forming a recess between adjacent electrodes of the first electrode array, and the first substrate structure is moveable with respect to the second substrate structure.