Abstract: The embodiments of the invention include a method for controlling plasma conditions of a glow discharge system using the integrated electron (or ion) pulse area extracted from the total lamp current. The method of using an integrated electron/ion pulse area for controlling plasma conditions allows for controlled analysis of conductive, non-conductive and layered materials without the need for estimation of plasma voltages. The method allows for control of sputter rates and plasma emissions that cannot be achieved using other methods such as capacitive divider calculations where actual thicknesses and dielectric constants are not known or predefined.

Abstract: The embodiments of the invention include a method for controlling plasma conditions of a glow discharge system using the integrated electron (or ion) pulse area extracted from the total lamp current. The method of using an integrated electron/ion pulse area for controlling plasma conditions allows for controlled analysis of conductive, non-conductive and layered materials without the need for estimation of plasma voltages. The method allows for control of sputter rates and plasma emissions that cannot be achieved using other methods such as capacitive divider calculations where actual thicknesses and dielectric constants are not known or predefined.