Abstract: A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD) at relatively low temperatures. A plurality of gases capable of reacting to form silicon nitride are introduced into a PECVD reactor. An electric field is generated in the reactor to produce a plasma. The gases in the reactor react in the presence of the electrical field to form a silicon nitride dielectric film.

Abstract: A first layer of magnetic material is deposited onto a substrate to form a bottom pole of an inductive transducer. A second layer of magnetic material is plated on the first layer of magnetic material within the pole tip region to form a bottom pole extension. A layer of non-magnetic metal is then plated on the bottom pole extension to form the gap. A third layer of magnetic material is then plated on the gap layer to form the top pole extension. In one form of the invention, a mask is employed to define a good zero throat level surface to the pole tip region.